Journal ArticleDOI
Effects of beam spot size on the correlation between laser and heavy ion SEU testing
Florent Miller,N. Buard,Thierry Carriere,R. Dufayel,R. Gaillard,P. Poirot,J.-M. Palau,B. Sagnes,Pascal Fouillat +8 more
Reads0
Chats0
TLDR
In this article, the influence of the laser spot size on the threshold energy of the SEU cross-section curves was analyzed and a new methodology was proposed to correlate laser to heavy ion results.Abstract:
This work presents new results to compare EADS CCR laser experiments and heavy ion tests. More precisely, this study describes the influence of the laser spot size on the threshold energy of the SEU cross-section curves. A new methodology is proposed to correlate laser to heavy ion results.read more
Citations
More filters
Journal ArticleDOI
Pulsed-Laser Testing for Single-Event Effects Investigations
TL;DR: The application of pulsed lasers to the study of Single-Event Effects (SEEs) in integrated circuits and devices is described, including light propagation and absorption by both linear and non-linear processes.
Journal ArticleDOI
Comparison of single event transients generated at four pulsed-laser test facilities - NRL, IMS, EADS, JPL
S. P. Buchner,Nicolas J.-H. Roche,Jeffrey H. Warner,Dale McMorrow,Florent Miller,Sebastien Morand,Vincent Pouget,C. Larue,Veronique Ferlet-Cavrois,F. El Mamouni,Heikki Kettunen,Philippe C. Adell,Gregory R. Allen,David Aveline +13 more
TL;DR: In this article, four pulsed-laser single event effects systems, differing in wavelength and pulse width, were used to generate single event transients in a large-area silicon photodiode and an operational amplifier (LM124) to determine how transient amplitude and charge collection varied among the different systems.
Journal ArticleDOI
Laser SEL Sensitivity Mapping of SRAM Cells
TL;DR: In this article, it was shown that laser sensitivity mapping at the cell level can be used to reconstruct and analyze the SEE cross-section, which resolves such conundrums as data pattern variations in the SEE sensitivity of memories.
Journal ArticleDOI
Estimation of Heavy-Ion LET Thresholds in Advanced SOI IC Technologies From Two-Photon Absorption Laser Measurements
James R. Schwank,Marty R. Shaneyfelt,Dale McMorrow,Veronique Ferlet-Cavrois,Paul E. Dodd,David F. Heidel,Paul W. Marshall,Jonathan A. Pellish,Kenneth A. LaBel,Kenneth P. Rodbell,Mark C. Hakey,Richard S. Flores,Scot E. Swanson,Scott M. Dalton +13 more
TL;DR: In this paper, the laser energy thresholds for SEU for 1-Mbit SRAMs built in Sandia's 0.35-μm SOI technology were measured using carrier generation by two-photon absorption.
Journal ArticleDOI
Laser Mapping of SRAM Sensitive Cells: A Way to Obtain Input Parameters for DASIE Calculation Code
Florent Miller,N. Buard,Guillaume Hubert,S. Alestra,G. Baudrillard,Thierry Carriere,R. Gaillard,J.-M. Palau,Frédéric Saigné,Pascal Fouillat +9 more
TL;DR: A new way of investigation using the laser method based on laser threshold mappings of electronic devices is presented, which can be used as input parameters for analytical or Monte Carlo calculation codes in order to predict the behavior of sensitive components towards radiations.
References
More filters
Journal ArticleDOI
Critical evaluation of the pulsed laser method for single event effects testing and fundamental studies
Joseph S. Melinger,S. P. Buchner,Dale McMorrow,W.J. Stapor,Todd R. Weatherford,A.B. Campbell,H. Eisen +6 more
TL;DR: In this article, an evaluation of the pulsed laser as a technique for single events effects (SEE) testing is presented, where the important optical effects, such as laser beam propagation, surface reflection, and linear and nonlinear absorption, determine the nature of laser-generated charge tracks in semiconductor materials.
Journal ArticleDOI
Application of a pulsed laser for evaluation and optimization of SEU-hard designs [CMOS]
TL;DR: In this paper, a quantitative correlation is observed between the laser single-event upset and single event latchup threshold measurements and those performed using accelerator-based heavy ion testing methods, revealing the advantages of incorporating laser evaluation at an early stage into programs described for the development of radiation-hardened parts.
Journal ArticleDOI
Impact of technology trends on SEU in CMOS SRAMs
Paul E. Dodd,F.W. Sexton,G.L. Hash,Marty R. Shaneyfelt,Bruce L. Draper,A.J. Farino,Richard S. Flores +6 more
TL;DR: The impact of technology trends on the SEU hardness of epitaxial CMOSSRAMs is investigated using three-dimensional simulation and an application of SEU simulation, to the development of a 0.5-/spl mu/m radiation-hardened CMOS SRAM is presented.
Journal ArticleDOI
Charge generation and collection in p-n junctions excited with pulsed infrared lasers
TL;DR: In this paper, the authors examined optical absorption processes for applications of infrared lasers to the simulation of single-particle effects in silicon and GaAs, which require that the laser is focused to a small area on the device surface.
Journal ArticleDOI
Backside laser testing of ICs for SET sensitivity evaluation
D. Lewis,Vincent Pouget,Felix Beaudoin,Philippe Perdu,Hervé Lapuyade,Pascal Fouillat,Andre Touboul +6 more
TL;DR: In this paper, a new experimental approach combining backside laser testing and analog mapping is presented, which is applied to the study of single-event transient (SET) sensitivity on a linear IC.