# Effects of tunnelling current on millimetre-wave IMPATT devices

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### "Effects of tunnelling current on mi..." refers result in this paper

...This frequency corresponds to the background doping level of nearly 5.0 × 1023 m−3 which is in close agreement with the reported results (Culshaw & Giblin, 1974; Haddad, Greiling, & Schroeder, 1970; Sze, 1981)....

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...The first fundamental device equation, i.e. Poisson’s equation (Sze, 1981), taking into account the mobile space charge (Gibbons, 1973; Sridharan & Roy, 1978, 1980) in the space charge region of the device is given by: d xð Þ dx ¼ q εs ND xð Þ NA xð Þ þ p xð Þ n xð Þð Þ; (1) where ξ(x) is the…...

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914 citations

### "Effects of tunnelling current on mi..." refers methods in this paper

...The electron tunnelling generation rate was obtained from the thorough quantum mechanical analysis reported earlier (Elta, 1978; Kane, 1961), and it is given by:...

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...…Þ Jn xð Þ ¼ 2 GA xð Þ þ γ xð Þð Þ þ GTn xð Þ þ GTp xð Þ: (7) The electron tunnelling generation rate was obtained from the thorough quantum mechanical analysis reported earlier (Elta, 1978; Kane, 1961), and it is given by: GTn xð Þ ¼ aT 2 xð Þ exp bT xð Þ : (8) The coefficients aT and bT in…...

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521 citations

### "Effects of tunnelling current on mi..." refers background in this paper

...…Journal of Electronics, 2015 Vol. 102, No. 9, 1429–1456, http://dx.doi.org/10.1080/00207217.2014.982211 © 2014 Taylor & Francis In the year 1958, WT Read considered the tunnelling generated current to analyse the IMPATT operation in his renowned paper (Read, 1958)....

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...In the year 1958, WT Read considered the tunnelling generated current to analyse the IMPATT operation in his renowned paper (Read, 1958)....

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485 citations

### "Effects of tunnelling current on mi..." refers background in this paper

...…power transfer theorem, the real part of the device impedance must be matched to the real part of the load impedance by using a matching circuit with minimum loss at the resonant frequency at which the magnitude of the reactance of the device is equal to that of the circuit (Kurokawa, 1969)....

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...…RF circuit may be expressed as: ZRF ¼ jωL 1g 1 g þ jωL ¼ ω 2L2g þ jωL 1þ ω2L2g2 : (33) In a practical oscillator circuit, the Kurokawa condition of steady-state oscillation (Kurokawa, 1969) is given by: ZDP þ ZRF ¼ 0; thus, both the real and imaginary parts of that must be separately equal to zero....

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...But in case of steady-state free running oscillator, the Kurokawa condition ((Kurokawa, 1969) (i.e. Real ZDP þ ZRFð Þ ¼ 0) must hold....

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...The oscillation goes on to build up for a number of cycles until the magnitude of the negative conductance of the device decays to the value of positive conductance of the RF circuit and the oscillation finally becomes stable (Kurokawa, 1969)....

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