Efficiency droop in light‐emitting diodes: Challenges and countermeasures
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...[30] At low carrier concentrations, the Auger recombination is neglected for practical reasons....
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...When this condition is broken, high-level injection occurs, and both drift and diffusion currents in the p-type region must be considered [92]....
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"Efficiency droop in light‐emitting ..." refers background or methods or result in this paper
...These three characteristics are in marked contrast to the GaInN/GaN material system [91]....
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...Given that, in a GaInN LED, the thickness of p-type GaN cladding layer typically is smaller than the electron minority carrier diffusion length, the electron diffusion current leaking out of the active region of a heterojunction LED can be expressed as [91]...
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...This framework is indeed fulfilled in the AlGaInP and the AlGaInN material system [91]....
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...This agrees with expectations that SRH recombination is minimized at low temperatures [91, 94]....
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