Efficient lattice‐matched double‐heterostructure LED’s at 1.1 μm from GaxIn1−xAsyP1−y
TL;DR: The growth and operation of lattice matched double-heterostructure InP/Ga0.17In0.83As0.34P0.66/InP light-emitting diodes was reported in this article.
Abstract: The growth and operation of lattice‐matched double‐heterostructure InP/Ga0.17In0.83As0.34P0.66/InP light‐emitting diodes is reported. These diodes have an emission wavelength of 1.1 μm and quantum efficiencies of 4%.
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TL;DR: In this paper, the energy band gap and lattice constant contours are presented for the nine quaternary alloys formed from Al, Ga, In and P, As, Sb.
Abstract: Energy band gap and lattice constant contours are presented for the nine quaternary alloys formed from Al, Ga, In and P, As, Sb. The quaternary bandgaps were obtained using an interpolation formula proposed by Moonet al. The quater nary lattice constants were obtained by use of a linear interpolation technique using the binary lattice constants as boundary values.
150 citations
TL;DR: In this article, the electron drift velocity and electric field relationship for the Ga1−xInxP1−yAsy quaternary alloy was calculated using the Monte Carlo method.
Abstract: The electron drift‐velocity–electric‐field relationship has been calculated for the Ga1−xInxP1−yAsy quaternary alloy using the Monte Carlo method. Emphasis has been placed on the compositional range for which the alloy is lattice matched to GaAs and InP. These calculations suggest that this quaternary offers promise as a material for microwave semiconductor devices, including field‐effect transistors and transferred electron devices.
146 citations
TL;DR: In this article, the contact properties of various metal combinations, deposited by vacuum evaporation on InP, were studied and the specific contact resistances were analyzed using a four-point method which also accounts for the spreading resistance.
Abstract: The contact properties of various metal combinations, deposited by vacuum evaporation on InP, were studied. Among these metal combinations, Au/Ge + Ni and Au/Zn proved to be most suitable. The former on n-InP (n = 8 × 1017/cm3) and the latter on p-InP (p = 9 × 1017/cm3) exhibited specific contact resistances as low as 1.2 × 10−6 and 1.1 × 10−4 Ωcm2, respectively. The specific contact resistances were analyzed using a four-point method which also accounts for the spreading resistance. Furthermore, the resistances of metal contacts to InP were calculated as a function of doping concentration and were compared with the experimental results. The described contacting technique was successfully applied to the preparation of quaternary lasers.
124 citations
TL;DR: In this paper, the phase diagram required for the growth of lattice matched In1−xGaxAs1−yPy layers on InP substrates has been determined experimentally at 650 °C.
Abstract: The In‐Ga‐As‐P quaternary phase diagram required for the growth of lattice‐matched In1−xGaxAs1−yPy layers on InP substrates has been determined experimentally at 650 °C. The liquidus isotherms were obtained by the seed‐dissolution technique. The solidus iostherms were determined by electron‐microprobe analysis performed on surfaces of quaternary epitaxial layers grown on Sn‐doped InP (111) B substrates from quaternary saturated melts. Lattice constants of layers were measured by an x‐ray‐diffraction technique. The liquid‐phase‐epitaxy growth conditions of lattice‐matched In1−xGaxAs1−yPy (0⩽x⩽0.47, 0⩽y⩽1.0) layers on InP were found from the results of the phase diagram and lattice constant measurements. Lattice‐matched layers with various band gaps (from 1.34 to 0.74 eV at room temperature) were grown by using these conditions. Band gaps of the layers were determined by photoluminescence measurements at 300 and 77 K. The band gap at each temperature was found to be linearly dependent on alloy‐composition p...
84 citations
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TL;DR: The material dispersion of optical fibres having cores of silica or phosphosilicate glass falls to zero at a wavelength between 1.2 and 1.3 µm as mentioned in this paper.
Abstract: The material dispersion of optical fibres having cores of silica or phosphosilicate glass falls to zero at a wavelength between 1.2 and 1.3µm. A considerable increase in bandwidth can be obtained, especially with an l.e.d. source, by operation in this region.
280 citations
TL;DR: In this article, room temperature cw operation has been achieved for stripe geometry double-heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm.
Abstract: Room‐temperature cw operation has been achieved for stripe‐geometry double‐heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm. The heterostructures were grown by liquid‐phase epitaxy on melt‐grown InP substrates, and stripes were defined by using proton bombardment to produce high‐resistance current‐confining regions.
265 citations
TL;DR: In this paper, a birefringence study of GaAs double-heterostructure junction (GaAs junction) laser was performed and it was shown that strain is a controlling factor in the rapid degradation of the GaAs junction laser.
Abstract: This letter shows that strain is a controlling factor in the rapid degradation of GaAs double‐heterostructure junction lasers. A birefringence study of these lasers reveals extensive strain fields introduced during the bonding procedure resulting from the different thermal‐expansion coefficients of the materials involved. A new bonding procedure was developed which does not introduce significant strains. Lasers fabricated with the old and new bonding procedures were subjectively categorized as low, moderate, or high strained. A direct correlation was measured between low‐strain and room‐temperature cw laser lifetime. Lasers fabricated with the new bonding procedure have operated cw for as long as 880 h.
93 citations
TL;DR: In this article, double-sided heterostructures were prepared from four-component solid solutions GaxIn1-xAsyP1-y(λ=1.02 μ) and AlxGa1−xSbyAS1−y (λ=0.945 μ).
Abstract: Double-sided heterostructures were prepared from four-component solid solutions GaxIn1–xAsyP1–y(λ=1.02 μ) and AlxGa1–xSbyAS1–y(λ=0.945 μ). In the former system the problem of compatability of the lattices was solved by adding Ga and As to InP in amounts which ensured that the lattice period was the same (because of the opposite influence of these impurities). Indium phosphide was used as the wide-gap layer. The resultant laser heterostructure was the first system not based on the mutual replacement of Al and Ga, in contrast to earlier heterolasers and to the second investigated system (AlxGa1–xSbyAS1–y).
75 citations
TL;DR: In this article, the importance of internal absorption losses in determining the spectral distribution and the electroluminescence efficiency at room temperature has been discussed, and a number of p-n junctions of In x Ga 1-x As injection lasers have been fabricated with threshold current densities between 2000 and 3000 A/cm2 at 80 K.
Abstract: Vapor-grown p-n junctions of In x Ga 1-x As have been prepared that emit near-bandgap infrared radiation at 1.06 µm with an external quantum efficiency in excess of 1 percent at room temperature. These diodes have an electroluminescence response time of 20 ns. In addition, In x Ga 1-x As injection lasers have been fabricated with threshold current densities between 2000 and 3000 A/cm2at 80 K. The importance of internal absorption losses in determining the spectral distribution and the electroluminescence efficiency at room temperature is described.
24 citations