Journal ArticleDOI
Electrical and switching properties of InSe amorphous thin films
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TLDR
In this article, the electrical and switching properties of InSe thin films have been studied and it was found that the dark electrical resistivity decreases with an increase in film thickness and temperature.About:
This article is published in Thin Solid Films.The article was published on 1991-05-15. It has received 47 citations till now. The article focuses on the topics: Amorphous solid & Electrical measurements.read more
Citations
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Memory switching phenomena in thin films of chalcogenide semiconductors
N.A. Hegab,M. Fadel,K Sedeek +2 more
TL;DR: In this article, the currentvoltage characteristic in the OFF-state and switching phenomenon in Ge 20 M 75 Bi 5 (M S, Se or Te) chalcogenide semiconductor thin films was investigated.
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Memory switching in amorphous GeSeTl chalcogenide semiconductor films
TL;DR: In this article, the effects of adding thallium to both amorphous GeSe2 and GeSe4 results in decreasing the values of the threshold electric field, the activation energy of switching, as well as the thermal activation energy.
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MOCVD of group III chalcogenides
TL;DR: A review of recent advances in the metal organic chemical vapour deposition (MOCVD) of thin films of group III chalcogenides, including their application for the passivation of GaAs surfaces, is presented in this article.
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Chemical vapor deposition of Gallium selenide and indium selenide nanoparticles
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Change in the type of majority carriers in disordered ln x Se100?x thin-film alloys
TL;DR: In this article, electrical, optical and physico-chemical properties of disordered InxSe100−x thin films have been investigated for x ranging from 40-65 and the results have been interpreted through a theory based on the relative percentage evolution of the In-In and Se-Se chemical bonds and, on the other hand, by a percolation theory due to microcrystalline structures and indium filaments.
References
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Reversible thermal breakdown as a switching mechanism in chalcogenide glasses
TL;DR: In this paper, a review of the main features of chalcogenide glass switches is given and interpreted in terms of a thermal runaway mechanism, and several developments are discussed, including field-dependent effects, channeling instabilities, and electrode hot spots.
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Off-state thermal switching in amorphous SeTeGe system
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Electrical properties of indium selenide single crystals
TL;DR: In this article, resistivity, Hall-effect, and space-charge limited current measurements were performed on InSe single crystals grown by the Bridgman-Stockbarger method, and the electrical properties of the investigated samples are dominated by two donor centers at 0.10 and 0.34 eV.
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Conduction and switching in InxSe1-x
TL;DR: In this paper, the electrical properties of bulk InxSe1-x prepared by quenching from the melt are investigated, and it is found that this system exhibits non-linear I-U characteristics and switching phenomena.
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Carrier mobility and life time measurements in a-InxSe1-x films
TL;DR: In this article, the transport properties in a-InxSe1−x films have been studied by a time of flight method, and the experimental results are explained by an increase in the number of shallow and deep traps generated by the introducing of In.