Journal ArticleDOI
Electrical characteristics of lateral heterostructure organic field-effect bipolar transistors
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In this article, the authors describe and discuss the unique electrical characteristics of an organic field effect transistor in which the active layer consists of a type II lateral heterojunction located approximately midway between the source and drain, which leads to devices that operate in only the steady state when there is balanced electron and hole injections from the drain and source.Abstract:
We describe and discuss the unique electrical characteristics of an organic field-effect transistor in which the active layer consists of a type II lateral heterojunction located approximately midway between the source and drain. The two active semiconductors on either side of the junction transport only one carrier type each, with the other becoming trapped, which leads to devices that operate in only the steady state when there is balanced electron and hole injections from the drain and source. We describe the unique transfer characteristics of such devices in two material systems.read more
Citations
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Journal ArticleDOI
Toward the Development of Printable Nanowire Electronics and Sensors
Zhiyong Fan,Johnny C. Ho,Toshitake Takahashi,Roie Yerushalmi,Kuniharu Takei,Alexandra C. Ford,Yu-Lun Chueh,Ali Javey +7 more
TL;DR: In this paper, the authors focus on the recent advancements in the large-scale integration of single crystalline, inorganic-nanowire (NW) arrays for electronic and sensor applications, specifically involving the contact printing of NWs at defined locations.
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Large-Area Soft e-Skin: The Challenges Beyond Sensor Designs
Ravinder Dahiya,Nivasan Yogeswaran,Fengyuan Liu,Libu Manjakkal,Etienne Burdet,Vincent Hayward,Henrik Jörntell +6 more
TL;DR: New developments related to the handling of tactile data, energy autonomy, and large-area manufacturing related to tactile sensing and haptics in robotics and prosthetics are reviewed.
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Direct laser writing of complementary logic gates and lateral p-n diodes in a solution-processible monolithic organic semiconductor.
Jean-Charles Ribierre,Takashi Fujihara,Satoshi Watanabe,Mutsuyoshi Matsumoto,Tsuyoshi Muto,Aiko Nakao,Tetsuya Aoyama +6 more
TL;DR: This work fabricated top-contact bottom-gate organic FETs under ambient conditions by spin-coating a QQT(CN)4 thin film on top of a polyimide gate-dielectric layer and using chromium drain/source electrodes, and exhibits an ambipolar behavior with a predominant hole-transport character.
Journal ArticleDOI
Field-effect-tuned lateral organic diodes
TL;DR: The observation of built-in potentials makes an important connection between organic junctions and textbook descriptions of inorganic devices, and these kinds of potentials may prove to be controlling factors in charge separation efficiency in organic photovoltaics.
Journal ArticleDOI
Electrical characteristics of zinc oxide-organic semiconductor lateral heterostructure based hybrid field-effect bipolar transistors
TL;DR: In this article, a field effect bipolar transistors (FEBT) with a lateral heterostructure based on ZnO and p-channel organic semiconductors was fabricated and characterized.
References
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Journal ArticleDOI
Organic Thin Film Transistors for Large Area Electronics
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
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General observation of n-type field-effect behaviour in organic semiconductors
Lay-Lay Chua,Lay-Lay Chua,Jana Zaumseil,Jui Fen Chang,Eric C.W. Ou,Peter K. H. Ho,Peter K. H. Ho,Henning Sirringhaus,Richard H. Friend +8 more
TL;DR: It is demonstrated that the use of an appropriate hydroxyl-free gate dielectric—such as a divinyltetramethylsiloxane-bis(benzocyclobutene) derivative (BCB; ref. 6)—can yield n-channel FET conduction in most conjugated polymers, revealing that electrons are considerably more mobile in these materials than previously thought.
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Electron and ambipolar transport in organic field-effect transistors.
Journal ArticleDOI
Large-scale complementary integrated circuits based on organic transistors
Brian Keith Crone,Ananth Dodabalapur,Y. Y. Lin,Robert William Filas,Zhenan Bao,A. LaDuca,Rahul Sarpeshkar,Rahul Sarpeshkar,Howard E. Katz,Wenjie Li +9 more
TL;DR: It is shown that such an approach can realize much larger scales of integration (in the present case, up to 864 transistors per circuit) and operation speeds of ∼1 kHz in clocked sequential complementary circuits.