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Journal ArticleDOI

Electrical characteristics of zinc oxide-organic semiconductor lateral heterostructure based hybrid field-effect bipolar transistors

15 Feb 2011-Applied Physics Letters (American Institute of Physics)-Vol. 98, Iss: 7, pp 073302
TL;DR: In this article, a field effect bipolar transistors (FEBT) with a lateral heterostructure based on ZnO and p-channel organic semiconductors was fabricated and characterized.
Abstract: Zinc oxide-organic semiconductor lateral heterostructure based field-effect bipolar transistors (FEBTs) having heterointerfaces approximately midway between the source and drain electrodes are fabricated and characterized. These hybrid FEBTs comprise zinc oxide (ZnO) and p-channel organic semiconductors [Pentacene and α-sexithiophene (6T)] supporting electron transport and hole transport on either side of the heterojunction, respectively. Current flow in the transistor channel is established as a result of carrier injection across the heterointerface followed by recombination. In steady state, such devices possess significant populations of holes and electrons in the transistor channel and operate in bipolar mode.
Citations
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Journal ArticleDOI
TL;DR: In this paper, the recent advances in inks, strategies, and the applications of inkjet-printed wearable electronics are summarized based on uniform and high-resolution patterns, well-compatible functional inks can be deposited to fabricate flexible/stretchable and durable wearable electronics.
Abstract: In recent years, wearable electronics have experienced tremendous development due to their promising applications in fields such as portable, flexible/stretchable human-interactive sensors, displays, and energy devices. To effectively fabricate wearable electronics, a high-efficient, cost-saving, and eco-friendly manufacture technology is required. Inkjet printing, which rapidly, precisely, and reproducibly deposits a broad variety of functional materials in a non-impact, addictive patterning, and maskless approach, serves as an effective tool for the fabrication of wearable electronics. In this review, the recent advances in inks, strategies, and the applications of inkjet-printed wearable electronics are summarized. Based on uniform and high-resolution patterns, well-compatible functional inks can be deposited to fabricate flexible/stretchable and durable wearable electronics. Perspectives on the remaining challenges and future developments are also proposed.

378 citations

Journal ArticleDOI
TL;DR: In this paper, a polycrystalline ZnO thin film was obtained on the p-Si for the heterojunction diode fabrication by sol-gel method, and the texture of the film is hexagonal with a strong (0.0.2) preferred direction.

68 citations

Journal ArticleDOI
TL;DR: In this paper, the fabrication and detailed electrical properties of n-TiO2/p-ZnO heterojunction diode were reported, which showed that this structure showed a good rectifying behavior with a typical ideality factor of 3.62, which was considered high due to the current mechanism and large defect density at the interface.
Abstract: The present work reports the fabrication and detailed electrical properties of n-TiO2/p-ZnO heterojunction diode. We have determined the electrical characteristics of the device such as current–voltage (I–V) and capacitance–voltage (C–V) at room temperature. This structure showed a good rectifying behavior with a typical ideality factor of 3.62, which was considered high due to the current mechanism and large defect density at the interface. The possible conduction mechanism of the heterojunction diode was determined by analyzing the I–V characteristics. The obtained results show that the n-TiO2/p-ZnO heterojunction diode is an excellent candidate for semiconductor device applications.

38 citations

Journal ArticleDOI
24 Jan 2012-ACS Nano
TL;DR: High-performance inkjet-printed hybrid thin film transistors with an electrically engineered heterostructure by using specially designed PSCs and semiconducting SWNTs (sc-SWNTs) whose system achieved a high mobility, no V(on) shift, and a low off-current is demonstrated.
Abstract: Molecularly hybridized materials composed of polymer semiconductors (PSCs) and single-walled carbon nanotubes (SWNTs) may provide a new way to exploit an advantageous combination of semiconductors, which yields electrical properties that are not available in a single-component system. We demonstrate for the first time high-performance inkjet-printed hybrid thin film transistors with an electrically engineered heterostructure by using specially designed PSCs and semiconducting SWNTs (sc-SWNTs) whose system achieved a high mobility of 0.23 cm2 V–1 s–1, no Von shift, and a low off-current. PSCs were designed by calculation of the density of states of the backbone structure, which was related to charge transfer. The sc-SWNTs were prepared by a single cascade of the density-induced separation method. We also revealed that the binding energy between PSCs and sc-SWNTs was strongly affected by the side-chain length of PSCs, leading to the formation of a homogeneous nanohybrid film. The understanding of electrosta...

27 citations


Cites background or methods from "Electrical characteristics of zinc ..."

  • ...Thebinding energies (EBE)were calculatedusing theminimized energy for each structure, EBE[(7,5) SWNT/PSC]= E[(7,5) SWNT/ PSC] E[(7,5) SWNT] E[PSC]....

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  • ...The optimized model structure of the (7,5) sc-CNT and PSCs and their densities of states....

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  • ...However, as side-chain length increases from a hexyl to dodecyl group, the EBE[(7,5) SWNT/PQTBTz-C12] increases by 1.73 eV, which suggests that PSCs with a longer side chains can more effectively interact with SWNTs....

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  • ...To further investigate the electrostatic interactions of the heterostructure, first-principles calculations based on the density functional theory (DFT), including van der Waals interactions,(43) 47 were employed to investigate the nanohybrids with heterostructures for (7,5) sc-SWNT and PSCs as well as assess the effect of the PSC structure [(1) polymer backbone, (2) side-chain length] on charge transfer and binding energy in the nanohybrid....

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  • ...The highest occupied molecular orbital (HOMO)/lowest unoccupied molecular orbital (LUMO) levels for a single strand of semiconducting (7,5) SWNT and P3HT were calculated to be 5....

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Journal ArticleDOI
TL;DR: In this article, two diketopyrrolopyrrole (DPP)-based donor-acceptor copolymers with different backbone conformations were characterized in an inverted non-fullerene photodiode architecture using ZnO nano-patterned films as the electron transport layer.

20 citations

References
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Journal ArticleDOI
TL;DR: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature.
Abstract: The semiconductor ZnO has gained substantial interest in the research community in part because of its large exciton binding energy (60meV) which could lead to lasing action based on exciton recombination even above room temperature. Even though research focusing on ZnO goes back many decades, the renewed interest is fueled by availability of high-quality substrates and reports of p-type conduction and ferromagnetic behavior when doped with transitions metals, both of which remain controversial. It is this renewed interest in ZnO which forms the basis of this review. As mentioned already, ZnO is not new to the semiconductor field, with studies of its lattice parameter dating back to 1935 by Bunn [Proc. Phys. Soc. London 47, 836 (1935)], studies of its vibrational properties with Raman scattering in 1966 by Damen et al. [Phys. Rev. 142, 570 (1966)], detailed optical studies in 1954 by Mollwo [Z. Angew. Phys. 6, 257 (1954)], and its growth by chemical-vapor transport in 1970 by Galli and Coker [Appl. Phys. ...

10,260 citations

Journal ArticleDOI
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Abstract: Organic thin-film transistors (OTFTs) have lived to see great improvements in recent years. This review presents new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of OTFTs. The shifted focus in research from novel chemical structures to fabrication technologies that optimize morphology and structural order is underscored by chapters on vacuum-deposited and solution-processed organic semiconducting films. Finally, progress in the growing field of the n-type OTFTs is discussed in ample detail. The Figure, showing a pentacene film edge on SiO2, illustrates the morphology issue.

4,804 citations

Journal ArticleDOI
TL;DR: A method for growing vertical ZnO nanowire arrays on arbitrary substrates using either gas-phase or solution-phase approaches is presented and the nanorod arrays made in solution have a rod diameter, length, density, and orientation desirable for use in ordered Nanorod-polymer solar cells.
Abstract: A method for growing vertical ZnO nanowire arrays on arbitrary substrates using either gas-phase or solution-phase approaches is presented. A ∼10 nm-thick layer of textured ZnO nanocrystals with their c axes normal to the substrate is formed by the decomposition of zinc acetate at 200−350 °C to provide nucleation sites for vertical nanowire growth. The nanorod arrays made in solution have a rod diameter, length, density, and orientation desirable for use in ordered nanorod−polymer solar cells.

1,437 citations

Journal ArticleDOI
TL;DR: A consistent and quantitative correlation between solar-cell performance, photophysical data and the three-dimensional morphology has been obtained for devices with different layer thicknesses that enables differentiating between generation and transport as limiting factors to performance.
Abstract: The efficiency of polymer solar cells critically depends on the intimacy of mixing of the donor and acceptor semiconductors used in these devices to create charges and on the presence of unhindered percolation pathways in the individual components to transport holes and electrons. The visualization of these bulk heterojunction morphologies in three dimensions has been challenging and has hampered progress in this area. Here, we spatially resolve the morphology of 2%-efficient hybrid solar cells consisting of poly(3-hexylthiophene) as the donor and ZnO as the acceptor in the nanometre range by electron tomography. The morphology is statistically analysed for spherical contact distance and percolation pathways. Together with solving the three-dimensional exciton-diffusion equation, a consistent and quantitative correlation between solar-cell performance, photophysical data and the three-dimensional morphology has been obtained for devices with different layer thicknesses that enables differentiating between generation and transport as limiting factors to performance.

520 citations