Electrical conductivity and optical absorption in flash-evaporated CuInTe2 thin films
TL;DR: In this article, the optical absorption spectra of thin films of stoichiometric CuInTe 2 were analyzed and the band gap was found to be 1.03 eV, which was attributed to copper vacancies.
About: This article is published in Thin Solid Films.The article was published on 1986-08-01. It has received 29 citations till now. The article focuses on the topics: Band gap & Absorption spectroscopy.
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TL;DR: In this paper, the binding energies deduced from the XPS lines were found to be in good agreement with those of the reference powder, and the electrical resistance is governed by hopping conduction in the low temperature range (80 −250 K) and by grain-boundary-scattering mechanisms at higher temperature.
48 citations
01 Aug 1990
TL;DR: In this article, it was found that, while the films are stoichiometrics, MoSe2 in the hexagonal form was difficult to obtain even at temperature as high as 850 K.
Abstract: MoSe2 coatings were obtained by solid state reaction, induced by annealing, between the Mo and Se constituents in thin films form. The films have been investigated by X ray analysis, XPS analysis, scanning electron microscopy, electron microprobe analysis, optical absorption and electrical resistivity measurements. It was found that, while the films are stoichiometrics, MoSe2 in the hexagonal form was difficult to obtain even at temperature as high as 850 K. However thin films annealed under selenium pressure at only 770 K are well crystallized. The electrical resistivity is governed by hopping conduction in the low temperature range (80- 200 K) and by grain boundary scattering mechanisms at higher temperature.
43 citations
TL;DR: In this article, structural and optical properties of thin films grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties, and the depositions were carried out at substrate temperatures in the range 65-295 °C.
Abstract: Structural and optical properties of thin films CuInS2 grown by thermal evaporation have been studied relating the effects of substrate heating conditions of these properties. The depositions were carried out at substrate temperatures in the range 65-295 °C. We obtain CuInS2 layers with high structural quality by growing at Ts 140 °C with the presence of an amorphous component and at Ts 240 °C with formation of In and Cu7 In4 as minority phases. From the optical transmission and reflection an optical absorption coefficient of 3 × 104 -105 cm-1 for 200 °C. Analysis of the absorption coefficient data revealed the existence of several energy gaps, direct and forbidden direct gaps. The direct gaps lie between 1.38 and 2.20 eV and the forbidden direct gaps are in the 0.61-1.97 eV range. The effect of the substrate temperatures on the grain size and surface roughness has been studied. It has been shown that the substrate temperatures Ts 140 °C and Ts 240 °C yield maxima of the grain size and minima of the surface roughness.
39 citations
TL;DR: In this article, the influence of deposition parameters (electrolyte composition, concentration of reagent and deposition potential) on film composition was studied and the structure, composition, morphology, optical and electrical properties of as-deposited and of annealed films were investigated.
36 citations
TL;DR: In this article, the authors synthesize FeS 2 -thin films with good crystallinity using spray pyrolysis of FeCl 3 ·6H 2 O (0.03 M)-based aqueous solution onto glass substrates heated at 350 °C.
35 citations
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1,892 citations
TL;DR: In this article, the optical absorption in flash-evaporated CuInSe 2 thin films was studied in the photon energy range from 1 to about 3 eV, and it was shown that at energies well above the edge there exists an additional optical absorption due to forbidden direct transitions with the same characteristic gap energy.
163 citations
155 citations
TL;DR: In this paper, a model for the band structure of CuGaTe2 near the point Γ of the Brillouin zone was proposed and three transverse optical mode frequencies were obtained from an analysis of the optical transmission spectra in the photon energy range from 1 to about 3 eV.
129 citations