Electrical properties of Bi80Sb20 alloy thin films, vacuum-deposited at different substrate temperatures
TL;DR: In this paper, Bismuth antimonide (composition 80∶20) alloy thin films have been prepared by vacuum deposition at different substrate temperatures and, after annealing, their resistances have been recorded as a function of temperature, between 77 K and 500 K.
Abstract: Bismuth antimonide (composition 80∶20) alloy thin films have been prepared by vacuum deposition at different substrate temperatures and, after annealing, their resistances have been recorded as a function of temperature, between 77 K and 500 K. The observed resistance against temperature behaviour of the films, and the effect of thickness and substrate temperature during deposition of the films, has been explained by considering that these films behave as semiconductors; the overlap between valence and conduction bands being removed due to the presence of antimony, the influence of a quantum size effect and the fact that the grain size of the films formed is a function of thickness and substrate temperature.
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"Electrical properties of Bi80Sb20 a..." refers background or result in this paper
...It has been shown [ 1 ] that the lattice constants of the Bi-Sb solid solution in the composition range 0 to 30 at % Sb vary linearly with Sb composition and are given by...
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...The addition of Sb to Bi does not alter either the crystal structure or the equality of positive and negative charge carrier concentrations [ 1 , 2]. The change in the properties of Bi-Sb alloys and a transition from metallic to semiconducting behaviour arises because of the modification of the band structure (separation of bands) due to Sb addition....
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...Bi and Sb are both group V elements, which have the same trigonal crystal structure and are completely soluble in each other in the solid state [ 1 ]....
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...Structural investigations by other researchers into Bi-Sb alloys also do not show any evidence of the existence of ordering or supper-lattice structure [ 1 , 2, 6, 10]....
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...The fact that the band-gap values observed in the present films (Table II) are larger than those reported for the same material in the bulk state [ 1 ] and the observation that the band gap is a function of thickness showing a tendency to decrease with increasing thickness, indicate the influence of quantum size effect on band separation....
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2,180 citations
"Electrical properties of Bi80Sb20 a..." refers background or result in this paper
...This variation of resistance with substrate temperature is understandable because it is known from both nucleation theory [14] and experimentally [ 15 ] that films formed at higher substrate temperatures will have larger grain sizes and hence smaller grainboundary areas....
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...This is because, as is well known [14, 15 ], the thin fdms formed at higher substrate temperatures have larger grains, and as the films become thicker, the individual grains also become bigger....
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