Journal ArticleDOI

# Electrical properties of Bi80Sb20 alloy thin films, vacuum-deposited at different substrate temperatures

, N. Meena1
01 Dec 1981-Journal of Materials Science (Kluwer Academic Publishers)-Vol. 16, Iss: 12, pp 3489-3495

TL;DR: In this paper, Bismuth antimonide (composition 80∶20) alloy thin films have been prepared by vacuum deposition at different substrate temperatures and, after annealing, their resistances have been recorded as a function of temperature, between 77 K and 500 K.

AbstractBismuth antimonide (composition 80∶20) alloy thin films have been prepared by vacuum deposition at different substrate temperatures and, after annealing, their resistances have been recorded as a function of temperature, between 77 K and 500 K. The observed resistance against temperature behaviour of the films, and the effect of thickness and substrate temperature during deposition of the films, has been explained by considering that these films behave as semiconductors; the overlap between valence and conduction bands being removed due to the presence of antimony, the influence of a quantum size effect and the fact that the grain size of the films formed is a function of thickness and substrate temperature.

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TL;DR: In this article, thin films of AgSbTe2 with different thicknesses were prepared by thermal evaporation on glass substrates held at room temperature and the films were all found to be semiconducting in nature.
Abstract: Thin films of AgSbTe2 with different thicknesses were prepared by thermal evaporation on glass substrates held at room temperature. The films were all found to be semiconducting in nature. The film resistivity was found to be a function of inverse thickness and was discussed on the basis of the effective mean free path model. The activation energy was found to be a linear function of the inverse square of film thickness. It was attributed to the quantization of the momentum component of charge carriers normal to the film plane.

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TL;DR: In this article, an x-ray diffractometer and an electron probe micro-analysis were used to find no trace of Cu in the obtained alloys and it was concluded that Cu electrodes can be used for the deposition of Bi-Sb alloys, which results in an advantage of availability of the electrode.
Abstract: Bi-Sb alloys were grown by means of an electrodeposition method using Cu electrodes. The alloys were studied with the help of an x-ray diffractometer and an electron probe microanalysis. The both investigations have shown no trace of Cu in the obtained alloys. It can be concluded that Cu electrodes can be used for the deposition of Bi-Sb alloys; which results in an advantage of availability of the electrode.

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Journal ArticleDOI
TL;DR: The electrical, optical transmission and structural characteristics of the prepared samples were introduced before and after thermal annealing process and the absorption of Bi-Sb thin film structure was improved to reach 97% at near-infrared region.
Abstract: In this study, Bi-Sb thin film structure was prepared by thermal evaporation method. The electrical, optical transmission and structural characteristics of the prepared samples were introduced before and after thermal annealing process. At temperature of 500 °C, the absorption of the structure was improved to reach 97% at near-infrared region. As well, the thermal annealing caused to reduce the bulk resistance of the Bi-Sb thin film structure. The mor-phology of Bi-Sb structure was also improved by thermal annealing as characteristic islands of the structure appear clearly in form hexagonal areas distinct from each other. This study is aiming to examine such structures if they are employed as photonic devices such as photodetectors, LED’s and optical switches.
Proceedings ArticleDOI
27 Dec 2005
TL;DR: In this article, the authors studied the structural properties of Bi, Sb, and Bi-Sb alloy thin films and found that the maximum responsivity for these detectors can be obtained at 75/spl deg/C and the dependence of responsivity on the width of detectors was investigated.
Abstract: Obliquely deposited (70/spl deg/) Bi, Sb, and Bi-Sb alloy thin films have been prepared by thermal resistive technique. Structural properties of these films were studied using XRD. Their resistance and voltage responsivity for Nd:YAG and CO/sub 2/ laser pulses have been recorded as function of operating temperature between 10/spl deg/C and 120/spl deg/C. It was found that the maximum responsivity for these detectors can be obtained at 75/spl deg/C. On the other hand, the dependence of responsivity on the width of detectors was investigated.

##### References
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Book
01 Jan 1958
TL;DR: The Handbook of Lattice spacings and structures of metals and alloys as discussed by the authors is a handbook of argumentative essay structure spacing and lattice plane model modified by the incorporation of thermodynamic functions appropriate to the f.c.
Abstract: For the best product experience, a Handbook of of argumentative essay structure spacing Lattice Spacings and Structures of Metals and Alloys ScienceDirect. Get this from a library! A handbook of lattice spacings and structures of metals and alloys. (W B Pearson) Acm metal). Vol. lattice plane model modified by the incorporation of thermodynamic functions appropriate to the f.c.c. Al—Ag solid zones in the alloys. W. B. Pearson, Handbook of Lattice Spacings. Structures of Metals and Alloys.

3,081 citations

### "Electrical properties of Bi80Sb20 a..." refers background or result in this paper

• ...It has been shown [ 1 ] that the lattice constants of the Bi-Sb solid solution in the composition range 0 to 30 at % Sb vary linearly with Sb composition and are given by...

[...]

• ...The addition of Sb to Bi does not alter either the crystal structure or the equality of positive and negative charge carrier concentrations [ 1 , 2]. The change in the properties of Bi-Sb alloys and a transition from metallic to semiconducting behaviour arises because of the modification of the band structure (separation of bands) due to Sb addition....

[...]

• ...Bi and Sb are both group V elements, which have the same trigonal crystal structure and are completely soluble in each other in the solid state [ 1 ]....

[...]

• ...Structural investigations by other researchers into Bi-Sb alloys also do not show any evidence of the existence of ordering or supper-lattice structure [ 1 , 2, 6, 10]....

[...]

• ...The fact that the band-gap values observed in the present films (Table II) are larger than those reported for the same material in the bulk state [ 1 ] and the observation that the band gap is a function of thickness showing a tendency to decrease with increasing thickness, indicate the influence of quantum size effect on band separation....

[...]

Book
01 Jan 1969

2,180 citations

### "Electrical properties of Bi80Sb20 a..." refers background or result in this paper

• ...This variation of resistance with substrate temperature is understandable because it is known from both nucleation theory [14] and experimentally [ 15 ] that films formed at higher substrate temperatures will have larger grain sizes and hence smaller grainboundary areas....

[...]

• ...This is because, as is well known [14, 15 ], the thin fdms formed at higher substrate temperatures have larger grains, and as the films become thicker, the individual grains also become bigger....

[...]

Journal ArticleDOI
TL;DR: The electrical resistivity and Hall effect of zone-levelled single crystals of Bi-Sb alloys have been measured in the temperature range from 4.2 to 300 K as discussed by the authors.
Abstract: The electrical resistivity $\ensuremath{\rho}$ and Hall effect $R$ of zone-levelled single crystals of Bi-Sb alloys have been measured in the temperature range from 4.2\ifmmode^\circ\else\textdegree\fi{}K to 300\ifmmode^\circ\else\textdegree\fi{}K. $\mathrm{Log}(\frac{\ensuremath{\rho}}{{\ensuremath{\rho}}_{300}})$ vs $\frac{1}{T}$ curves suggest thermal activation of carriers in the concentration range from 5% to 40% Sb in the temperature range from 25\ifmmode^\circ\else\textdegree\fi{}K to 100\ifmmode^\circ\else\textdegree\fi{}K; approximate activation energies have been inferred from their slopes. The activation energy appears to have a maximum at a concentration near 12%. Some anomalies have been observed in the behavior of $\ensuremath{\rho}$ and $R$ on both sides of this concentration at low temperatures. Lattice parameters for these alloys have also been measured for the entire range of solid solubility. Both a maximum and minimum in the $c$-axis lattice parameter vs concentration occur near the concentration at which anomalies appear in transport properties. These phenomena are discussed in terms of a simple band model proposed by Blount and Cohen.

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Abstract: The influence of the external current on the magnetization of non-ideal type II superconductors is explained. It is shown how in the mixed state the external current brings about a particular state of the critical distribution of flux threads allowing a finite total transport current. In the case where the external current is perpendicular to the external magnetic field, the reduction of the magnetization due to the external current and its dependence on the history of the application of current and field are explained quantitatively in Nb-Zr(25%) alloy. The transverve paramagnetic effect observed by LeBlanc is also discussed.

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