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Journal ArticleDOI

Electrical properties of Bi80Sb20 alloy thin films, vacuum-deposited at different substrate temperatures

V. Damodara Das, +1 more
- 01 Dec 1981 - 
- Vol. 16, Iss: 12, pp 3489-3495
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TLDR
In this paper, Bismuth antimonide (composition 80∶20) alloy thin films have been prepared by vacuum deposition at different substrate temperatures and, after annealing, their resistances have been recorded as a function of temperature, between 77 K and 500 K.
Abstract
Bismuth antimonide (composition 80∶20) alloy thin films have been prepared by vacuum deposition at different substrate temperatures and, after annealing, their resistances have been recorded as a function of temperature, between 77 K and 500 K. The observed resistance against temperature behaviour of the films, and the effect of thickness and substrate temperature during deposition of the films, has been explained by considering that these films behave as semiconductors; the overlap between valence and conduction bands being removed due to the presence of antimony, the influence of a quantum size effect and the fact that the grain size of the films formed is a function of thickness and substrate temperature.

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Citations
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Journal ArticleDOI

Thickness dependence of electrical resistivity and activation energy in AgSbTe2 thin films

TL;DR: In this article, thin films of AgSbTe2 with different thicknesses were prepared by thermal evaporation on glass substrates held at room temperature and the films were all found to be semiconducting in nature.
Journal ArticleDOI

Electrodeposition of Bi-Sb Alloy Using Cu electrodes

TL;DR: In this article, an x-ray diffractometer and an electron probe micro-analysis were used to find no trace of Cu in the obtained alloys and it was concluded that Cu electrodes can be used for the deposition of Bi-Sb alloys, which results in an advantage of availability of the electrode.
Proceedings ArticleDOI

Effect of operating temperature on performance of obliquely deposited Bi, Sb, and Bi-Sb semimetal thin film laser detectors

TL;DR: In this article, the authors studied the structural properties of Bi, Sb, and Bi-Sb alloy thin films and found that the maximum responsivity for these detectors can be obtained at 75/spl deg/C and the dependence of responsivity on the width of detectors was investigated.
Journal ArticleDOI

Effect of Thermal Annealing on the Characteristics of Bi-Sb Thin Film Structure

TL;DR: The electrical, optical transmission and structural characteristics of the prepared samples were introduced before and after thermal annealing process and the absorption of Bi-Sb thin film structure was improved to reach 97% at near-infrared region.
Journal ArticleDOI

Ultimate figures of merit broadband self-powered obliquely deposited antimony thin film laser detectors

TL;DR: In this article , a study of the figures of merit antimony thin films detector grown by oblique angle deposition technique is presented, and a wideband (0.649-10.6) µm self-powered laser detectors; operating at room temperature.
References
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Book

A handbook of lattice spacings and structures of metals and alloys

TL;DR: The Handbook of Lattice spacings and structures of metals and alloys as discussed by the authors is a handbook of argumentative essay structure spacing and lattice plane model modified by the incorporation of thermodynamic functions appropriate to the f.c.
Book

Thin film phenomena

Journal ArticleDOI

Temperature Dependence of the Electrical Properties of Bismuth-Antimony Alloys

TL;DR: The electrical resistivity and Hall effect of zone-levelled single crystals of Bi-Sb alloys have been measured in the temperature range from 4.2 to 300 K as discussed by the authors.
Journal ArticleDOI

Effect of External Current on the Magnetization of Non-Ideal Type II Superconductors

TL;DR: In this article, the influence of external current on the magnetization of non-ideal type II superconductors is explained and it is shown how in the mixed state the external current brings about a particular state of the critical distribution of flux threads allowing a finite total transport current.
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