Journal ArticleDOI
Electrical properties of n-amorphous/p-crystalline silicon heterojunctions
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TLDR
In this paper, the forward current of all the junctions studied shows voltage and temperature dependence expressed as exp(−ΔEa f/kT) exp(AV), where ΔEa is the diffusion voltage and A is a constant.Abstract:
We have measured C‐V characteristics and temperature dependence of J‐V characteristics of undoped hydrogenated amorphous silicon (a‐Si:H) heterojunctions formed on p‐type crystalline silicon ( p c‐Si) substrates with different resistivities. It has been found that an abrupt heterojunction model is valid for a‐Si:H/p c‐Si heterojunctions, and the electron affinity of a‐Si:H has been estimated as 3.93±0.07 eV from C‐V characteristics. The forward current of all the junctions studied shows voltage and temperature dependence expressed as exp(−ΔEa f/kT) exp(AV), where ΔEa f and A are constants independent of voltage and temperature, being successfully explained by a multitunneling capture‐emission model. The reverse current is proportional to exp(−ΔEar/kT)(VD−V)1/2, where VD is the diffusion voltage and ΔEar is a constant. This current is probably limited by generation‐recombination process.read more
Citations
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Journal ArticleDOI
Current Losses at the Front of Silicon Heterojunction Solar Cells
Zachary C. Holman,Antoine Descoeudres,L. Barraud,Fernando Zicarelli Fernandez,Johannes P. Seif,S. De Wolf,Christophe Ballif +6 more
TL;DR: In this paper, the current losses due to parasitic absorption in the indium tin oxide (ITO) and amorphous silicon (a-Si:H) layers at the front of silicon heterojunction solar cells are isolated and quantified.
Journal ArticleDOI
Obtaining a higher Voc in HIT cells
TL;DR: In this article, the surface passivation at the a-Si/c-Si heterointerface realized by Sanyo's successful technologies for fabricating high-quality aSi films and solar cells with low plasma damage processes is investigated.
Journal ArticleDOI
Abruptness of a-Si :H/c-Si interface revealed by carrier lifetime measurements
Stefaan De Wolf,Michio Kondo +1 more
TL;DR: In this article, the authors confirm that the abruptness of the interface is strongly determined by the annealing process, and that the passivation quality of completely amorphous silicon films can be improved by annaling at temperatures up to 260°C.
Journal ArticleDOI
Dielectric surface passivation for silicon solar cells: A review
TL;DR: A review of the dielectric passivation coatings developed in the past two decades using a standardised methodology to characterise the metrics of surface recombination across all techniques and materials is provided in this article.
Journal ArticleDOI
Nature of doped a-Si:H / c-Si interface recombination
Stefaan De Wolf,Michio Kondo +1 more
TL;DR: In this paper, the authors argue that this phenomenon is caused by Fermi energy dependent Si-H bond rupture in the a-Si:H films, for either type of doping.
References
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Journal ArticleDOI
Experiments on Ge-GaAs heterojunctions
TL;DR: In this article, the electrical characteristics of Ge-GaAs heterojunctions, made by depositing Ge epitaxially on GaAs substrates, are described and I-V and electro-optical characteristics are consistent with a model in which the conduction-and valence-band edges at the interface are discontinuous.
Journal ArticleDOI
Theory of a Wide-Gap Emitter for Transistors
TL;DR: In this paper, it was shown that the injection deficit of an emitter can be decreased by several orders of magnitude if the emitter has a higher band gap than the base region.