Electrical properties of PMN-33PT thin film at MPB
TL;DR: In this paper, the electric properties of epitaxial PMN-33PT thin film as a function of temperature and frequency were investigated and the results of electrical field tunability of complex dielectric permittivity were approximated by the Landau-Ginsburg-Devonshire theory frame by the Johnson relation.
Abstract: This paper presents a systematic investigation of the electric properties of epitaxial PMN-33PT thin film as a function of temperature and frequency. Complex impedance measurements were performed over the temperature range of 30 – 500 K and frequency range 20 Hz – 1 MHz. Obtained results were corrected for the SRO series resistance. Ferroelectric hysteresis loops and electric field tunability of the real part of dielectric permittivity were measured in the 300 K – 450 K temperature range and at a frequency of 1 kHz. The results of electrical field tunability of complex dielectric permittivity were approximated by Landau-Ginsburg-Devonshire theory frame by the Johnson relation. Meanwhile, ferroelectric hysteresis loop measurements of epitaxial PMN-33PT thin film shows a good hysteresis property with a remnant polarization of 2Pr 10 µC/cm2 and coercive field of 2Ec 12 kV/cm at temperature range from 300 K to 380 K.
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TL;DR: In this article, the 3-acetamido propyl acrylate [AcAPA] (monomer) was synthesized and homopolymerization of AcAPA was carried by normal free radical polymerization procedure within tetrahydrofuran at 60 oC using AIBN as the initiator.
Abstract: The 3-acetamido propyl acrylate [AcAPA] (monomer) was synthesized. The homopolymerization of AcAPA was carried by normal free radical polymerization procedure within tetrahydrofuran at 60 oC using AIBN as the initiator. The poly(AcAPA) composites embedded europium(III)chloride (EuCI3) were prepared. Dependent of temperature and frequency on the dielectric characteristics were investigated in a frequency range starting from 100 Hz to 20000 Hz and in a temperature range from 243 K to 333 K. The results showed that the dielectric loss and dielectric constant increased, and the highest dielectric values were estimated in the case of poly(AcAPA) composites loaded EuCI3 and graphite as well. The FT-IR results indicated that the structural characterization of poly(AcAPA) is strongly affected by the incorporation of EuCI3. Thermal analysis results show that the thermal stability of the EuCI3-doped poly(AcAPA) composites has improved compared to the pure poly(AcAPA). The thermal property of composites has ...
8 citations
01 Jan 2023-Journal of Materials Chemistry C. Materials for Optical, Magnetic and Electronic Devices
TL;DR: In this paper , a pulsed-laser deposition (PLD) using ceramic targets, enriched with PbO (and MgO) was used to extract epitaxial thin films.
Abstract: 0.67[Pb(Mg1/3Nb2/3)O3]-0.33[PbTiO3] (PMN-33PT) epitaxial thin films were prepared by pulsed-laser deposition (PLD) using ceramic targets, enriched with PbO (and MgO). The phase composition and crystal structure were analyzed by high-resolution X-ray...
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TL;DR: It is shown that a large piezoelectric response can be driven by polarization rotation induced by an external electric field, and the computations suggest how to design materials with better performance, and may stimulate further interest in the fundamental theory of dielectric systems in finite electric fields.
Abstract: Piezoelectric materials, which convert mechanical to electrical energy (and vice versa), are crucial in medical imaging, telecommunication and ultrasonic devices. A new generation of single-crystal materials, such as Pb(Zn1/3Nb2/3)O3-PbTiO3 (PZN-PT) and Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), exhibit a piezoelectric effect that is ten times larger than conventional ceramics, and may revolutionize these applications. However, the mechanism underlying the ultrahigh performance of these new materials-and consequently the possibilities for further improvements-are not at present clear. Here we report a first-principles study of the ferroelectric perovskite, BaTiO3, which is similar to single-crystal PZN-PT but is a simpler system to analyse. We show that a large piezoelectric response can be driven by polarization rotation induced by an external electric field. Our computations suggest how to design materials with better performance, and may stimulate further interest in the fundamental theory of dielectric systems in finite electric fields.
1,789 citations
"Electrical properties of PMN-33PT t..." refers background in this paper
...The nature of the MPB is still debated in the literature, but a consensus seems to emerge on the existence of a sequence of second order phase transitions that accommodate the rhombohedral to the tetragonal transition, thus allowing for easy rotation of the polarization vector [4]....
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TL;DR: In this article, relaxor-based materials with the general formula, Pb(B/sub 1/3/Nb/sub 2/3/)O/sub 3/PbTiO/Sub 3/ (PZN-PT), have been shown to have superior dielectric and piezoelectric performance compared to that of PZT materials.
Abstract: For ultrasonic transducers, piezoelectric ceramics offer a range of dielectric constants (K/spl sim/1000-5000), large piezoelectric coefficients (d/sub ij//spl sim/200-700 pC/N), and high electromechanical coupling (k/sub t//spl sime/50%, k/sub 33//spl sime/75%). For several decades, the material of choice has been polycrystalline ceramics based on the solid solution Pb(Zr/sub 1-x/B/sub 2x/)O/sub 3/ (PZT), compositionally engineered near the morphotropic phase boundary (MPB). The search for alternative MPB systems has led researchers to revisit relaxor-based materials with the general formula, Pb(B/sub 1/,B/sub 2/)O/sub 3/ (B/sub 1/:Zn/sup 2+/, Mg/sup 2+/, Sc/sup 3+/, Ni/sup 2+/..., B/sub 2/:Nb/sup 5+/ Ta/sup 5+/...). There are some claims of superior dielectric and piezoelectric performance compared to that of PZT materials. However, when the properties are examined relative to transition temperature (T/sub 3/), these differences are not significant. In the single crystal form, however, Relaxor-PT materials, represented by Pb(Zn/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/ (PZN-PT), Pb(Mg/sub 1/3/Nb/sub 2/3/)O/sub 3/-PbTiO/sub 3/ (PMN-PT) have been found to exhibit longitudinal coupling coefficients (k/sub 33/)>90%, thickness coupling (k/sub t/)>83%, dielectric constants ranging from 1000 to 5000 with low dielectric loss 2000 pC/N, the later promising for high energy density actuators. For single crystal piezoelectrics to become the next generation material of ultrasonic transducers, further investigation in crystal growth, device fabrication and testing are required.
790 citations
TL;DR: In this article, a review of the relaxational properties of random-site electric dipoles in dielectrics is presented, including the role of pressure and applied dc biasing electric fields in understanding the physics of these materials including the R-to-FE crossover.
Abstract: Random lattice disorder produced by chemical substitution in ABO3 perovskites can lead to the formation of dipolar impurities and defects that have a profound influence on the static and dynamic properties of these materials that are the prototypical soft ferroelectric (FE) mode systems. In these highly polarizable host lattices, dipolar entities form polar nanodomains whose size is determined by the dipolar correlation length, rc, of the host and that exhibit dielectric relaxation in an applied ac field. In the very dilute limit (< 0.1at.%) each domain behaves as a non-interacting dipolar entity with a single relaxation time. At higher concentrations of disorder, however, the domains can interact leading to more complex relaxational behaviour. Among the manifestations of such behaviour is the formation of a glass-like relaxor (R) state, or even an ordered FE state for a sufficiently high concentration of overlapping domains. After a brief discussion of the physics of random-site electric dipoles in dielectrics, this review begins with the simplest cases, namely the relaxational properties of substitutional impurities (e.g., Mn, Fe and Ca) in the quantum paraelectrics KTaO3 and SrTiO3. This is followed by discussions of the relaxational properties of Li-and Nb-doped KTaO3 and of the strong relaxors in the PbMg1/3Nb2/3O3 and La-substituted PbZr1−xTixO3 families. Some emphasis will be on the roles of pressure and applied dc biasing electric fields in understanding the physics of these materials including the R-to-FE crossover.
681 citations
TL;DR: In this paper, a reorientational polarization was introduced to describe the intrinsic contribution of the dielectric constant to the dc electric field in polar dielectrics, such as might arise from polar clusters, domain-wall motions, fluctuation of microcluster boundaries, defects, etc.
Abstract: The dc electric-field dependence of the relative dielectric constant ${\ensuremath{\varepsilon}}_{r}(E)$ in polar dielectrics is studied. The Landau-Ginzburg-Devonshire (LGD) theory and its approximate treatments in dealing with ${\ensuremath{\varepsilon}}_{r}(E)$ are reviewed. It is found that the LGD theory works well in the case of a single polarization mechanism existing in the dielectrics, and the Johnson relation ${\ensuremath{\varepsilon}}_{r}(E)={\ensuremath{\varepsilon}}_{r}(0)/{1+\ensuremath{\lambda}[{\ensuremath{\varepsilon}}_{0}{\ensuremath{\varepsilon}}_{r}(0){]}^{3}{E}^{2}{}}^{1/3}$ is a reasonable approximate expression describing ${\ensuremath{\varepsilon}}_{r}(E).$ Many polar dielectrics, however, exhibit more than one polarization mechanism contributing to the total dielectric constant. The dielectric response of such polar dielectrics under an external dc electric field cannot be purely described by LGD theory. In this work, we introduce a ``reorientational polarization'' to describe the ``extrinsic'' contribution to the dielectric constant, such as might arise from polar clusters, domain-wall motions, fluctuation of microcluster boundaries, defects, etc. A ``multipolarization-mechanism'' model is proposed, and a combined equation ${\ensuremath{\varepsilon}}_{r}(E)={\ensuremath{\varepsilon}}_{r}(0)/{1+\ensuremath{\lambda}[{\ensuremath{\varepsilon}}_{0}{\ensuremath{\varepsilon}}_{r}(0){]}^{3}{E}^{2}{}}^{1/3}+\ensuremath{\Sigma}{(P}_{0}x/{\ensuremath{\varepsilon}}_{0})[\mathrm{cosh}(\mathrm{Ex}){]}^{\ensuremath{-}2}$ is adopted to describe the total ${\ensuremath{\varepsilon}}_{r}(E)$ response of a polar dielectric, where the first term is Johnson's relation which represents the ``intrinsic'' polarization, and the latter represents the ``extrinsic'' polarization. Agreement between the fitting of this equation to the experimental data is obtained for paraelectrics ${\mathrm{KTaO}}_{3}$ and ${\mathrm{B}\mathrm{i}:\mathrm{S}\mathrm{r}\mathrm{T}\mathrm{i}\mathrm{O}}_{3}.$
173 citations
01 Mar 2002
97 citations