Electrical resistivity of thin bismuth films
TL;DR: In this article, the electrical resistivities of thin bismuth films, either in step-up series or a fixed thickness, were measured between 4.2 and 320 K. This scatter became more pronounced with decreasing temperature and it was due to the variation of the TCR above liquid nitrogen temperature.
About: This article is published in Thin Solid Films.The article was published on 1976-02-02. It has received 17 citations till now. The article focuses on the topics: Electrical resistivity and conductivity & Bismuth.
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TL;DR: In this paper, in situ measurements of Hall effect, magnetoresistance, resistivity, and temperature coefficient of resistivity of bismuth films (700-2600 A) were carried out in a specially designed evacuation chamber.
Abstract: In situ measurements of Hall effect, magnetoresistance, resistivity, and temperature coefficient of resistivity of bismuth films (700–2600 A) were carried out in a specially designed evacuation chamber. The films were deposited on a glass substrate at 150°C and at a pressure of ∼10−6 Torr. The values of the mean free path and specular scattering parameter obtained were 14100 A and 0.5, respectively. The effect of the grain boundary on the electrical resistivity was also accounted for in the light of the Mayadas‐Shatzkes theory.
40 citations
TL;DR: In this paper, Fuchs-Sondheimer and Mayadas-Shatzkes showed that the relationship between the resistivite and the structure cristallographique of couches minces of bismuth can be investigated in a large domaine of temperature (20-500 K).
26 citations
TL;DR: In this article, Bismuth thin films have been deposited at 200°C on glass substrates using the pulsed laser deposition (PLD) technique with a high energy density (8 J/cm 2 ).
23 citations
TL;DR: In this article, the authors studied the effect of annealing on the transport properties of an epitaxial bismuth film and found that the helium temperature resistivity decreased by a factor of 15.
20 citations
15 citations
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TL;DR: In this paper, the total resistivity of a thin metal film is calculated from a model in which three types of electron scattering mechanisms are simultaneously operative: an isotropic background scattering (due to the combined effects of phonons and point defects), scattering due to a distribution of planar potentials (grain boundaries), and scattering by the external surfaces.
Abstract: In this paper, the total resistivity of a thin metal film is calculated from a model in which three types of electron scattering mechanisms are simultaneously operative: an isotropic background scattering (due to the combined effects of phonons and point defects), scattering due to a distribution of planar potentials (grain boundaries), and scattering due to the external surfaces. The intrinsic or bulk resistivity is obtained by solving a Boltzmann equation in which both grain-boundary and background scattering are accounted for. The total resistivity is obtained by imposing boundary conditions due to the external surfaces (as in the Fuchs theory) on this Boltzmann equation. Interpretation of published data on grain-boundary scattering in bulk materials in terms of the calculated intrinsic resistivity, and of thin-film data in terms of the calculated total resistivity suggests that (i) the grain-boundary reflection coefficient in Al is \ensuremath{\approx} 0.15, while it is somewhat higher in Cu; (ii) the observed thickness dependence of the resistivity in thin films is due to grain-boundary scattering as well as to the Fuchs size effect; and (iii) the common observation that single-crystal films possess lower resistivities than polycrystalline films may be accounted for by grain-boundary effects rather than by differences in the nature of surface scattering.
1,842 citations
TL;DR: In this article, the authors studied the thickness dependence of the resistivity, the Hall coefficient, and the transverse magneto-resistance, by gradually varying the thickness of a single film which was kept under high vacuum during the entire experiment.
Abstract: Bismuth films (200-1400 \AA{}) were grown epitaxially on freshly cleaved mica substrates. These films consisted of a mosaic of equally oriented crystallites averaging several microns in diameter. The plane of the films coincided with the trigonal plane of Bi. We have studied the thickness dependence of the resistivity, the Hall coefficient, and the transverse magneto-resistance, by gradually varying the thickness of a single film which was kept under high vacuum during the entire experiment. The resistivity at 360 and 77 \ifmmode^\circ\else\textdegree\fi{}K is a smooth monotonic function of the thickness. At 12 \ifmmode^\circ\else\textdegree\fi{}K, we observed small oscillations in the resistivity and in the magnetoresistance. These oscillations are regarded as probable manifestations of the quantum size effect (QSE). The thickness dependence of the Hall coefficient is in striking disagreement with the predictions of the infinite-potential-well model. Better agreement between the theory and experimental results is obtained when we assume a less rigid boundary condition. Also for several films we have investigated the temperature dependence of these three transport coefficients and found it to be quite different from that of bulk bismuth. We have attempted to explain these results in terms of the behavior of the carrier concentration and of the different scattering mechanisms that can come into play in these films.
165 citations
TL;DR: In this paper, the authors measured the resistivity, Hall coefficient, and magnetoresistance coefficient of twinned bismuth films between 1.15 and 300 K and found that the surface scattering in these films is not specular, contrary to the findings of some other workers.
Abstract: The resistivity, Hall coefficient, and magnetoresistance coefficient of well ordered but twinned bismuth films were measured between 1. 15 and 300 K. It was found that the surface scattering in these films is not specular, contrary to the findings of some other workers. At 300 K the thickness dependence of the resistivity can be roughly fitted by the Fuchs-Sondheimer boundary-scattering theory with a surface reflection coefficient of 0.6, indicating partially diffuse scattering. It was also observed that the apparent scattering becomes more diffuse with decreasing temperature until at low temperatures the data can no longer be explained by the Fuchs-Sondheimer theory. This indicates that an additional size-dependent temperature-dependent scattering mechanism exists in thin-film transport. It was observed that at low temperatures the temperature dependence of the conductivity could be explained on the basis of a constant mean free path for the thicker samples. For thinner samples, the temperature dependence of the conductivity again indicates that there is an additional scattering mechanism that becomes stronger with decreasing temperature and decreasing sample thickness. Values of the mobility and mean free path, calculated from the data, were also observed to vary consistently with the sample thickness. The conclusions, drawn from the thickness dependence of the resistivity, concerning the diffuseness of the surface scattering of the charge carriers were confirmed by the dependence of the mean free path upon the sample thickness. Finally, quantum size-effect oscillations were observed in all of the transport properties of the thin bismuth films at low temperatures. The period (about 400 \AA{}) and phase of the oscillations are in reasonable agreement with the theory and in good agreement with other values reported in the literature.
88 citations
Journal Article•
80 citations
TL;DR: In this paper, the dependence of the resistivity ρ magnetoresistance Δρ/ρ and Hall coefficient RH of thin Bi films (thickness d: 700-2000 A) on thickness and temperature was studied.
Abstract: The dependence of the resistivity ρ magnetoresistance Δρ/ρ and Hall coefficient RH of thin Bi films (thickness d: 700–2000 A) on thickness and temperature was studied. Thin Bi films were grown epitaxially on freshly cleaved mica substrates by thermal evaporation in ultra-high vacuum (1–5×10-8 Torr). These films had a mosaic structure of equally oriented crystallites (grain size: about 1 µm). The plane of the films was perpendicular to the trigonal axis of Bi. The oscillatory thickness-dependence (its period Δd: 400 A) of the galvanomagnetic coefficients and the decrease of oscillation amplitudes with increasing temperature were observed. The present authors also observed that the temperature at which the resistivity minimum occurred and the rate of the increase of carrier concentration with increasing temperature and also the oscillatory thickness-dependence, and the authors explained these oscillatory behaviours in terms of quantum size effect (QSE). In order to compare the experimental results with the QSE theory, the numerical calculation from this theory for thin Bi films was done. These thickness dependence agreed well with the QSE theory.
52 citations