scispace - formally typeset
Journal ArticleDOI

Electrical transport and morphological study of PLD-grown nanostructured amorphous carbon thin films

Reads0
Chats0
TLDR
In this article, the effect of various growth parameters on the physical and morphological properties of carbon films grown by pulsed laser deposition (PLD) was investigated and the most significant result was the observation of a large electroresistance value.
Abstract
Nanostructured carbon thin films have been actively investigated recently for their electroresistance (ER) properties. Furthermore, carbon films with nonlinear current?voltage (I?V) characteristics have potential application in field-emission devices. This has motivated us to study the effect of various growth parameters on the physical and morphological properties of carbon films grown by pulsed laser deposition (PLD). Carbon films have been deposited using a graphite target at different partial pressures of argon. The morphology of film surfaces deposited at various growth conditions was monitored using an atomic force microscope (AFM). AFM studies showed nanostructured grain growth with average grain size of about 80?90?nm. As the deposition time was decreased down to 1?min, the grain size was also found to decrease correspondingly. From Raman spectroscopic measurements an increase in the I(D)/I(G) ratio and a decrease in FWHM (G) clearly revealed the promotion of sp2 hybridization as the substrate temperature increased. All the films show semiconducting behaviour with the dominant conduction process being the three-dimensional (3D) variable range hopping (VRH) mechanism. Nonlinear I?V curves were obtained for carbon films deposited on p-type Si indicating diode-like behaviour. The most significant result of this study was the observation of a large electroresistance value.

read more

Citations
More filters
Journal ArticleDOI

Growth of large-area, few-layer graphene by femtosecond pulsed laser deposition with double-layer Ni catalyst

TL;DR: In this article, a femtosecond pulsed laser deposition at a relatively low temperature of 500 °C and a high pressure of 10 pounds of pressure was used to fabricate large-area, few-layer graphene.
Journal ArticleDOI

Impact of Argon gas on optical and electrical properties of Carbon thin films

TL;DR: In this paper, a KrF laser was used as source of ablation and plasma formation of thin films of carbon, which were synthesized and investigated for their electrical, optical, structural and surface properties.
References
More filters
Journal ArticleDOI

Substantiation of subplantation model for diamondlike film growth by atomic force microscopy.

TL;DR: In this article, the role of subsurface internal growth in diamond-like film formation has been investigated and the results substantiate the subplantation model of diamond-graphitic films.
Journal ArticleDOI

Electroresistance and electronic phase separation in mixed-valent manganites.

TL;DR: A large electroresistance (ER) of approximately 76% at 4 x 10(5) V/cm is found in LCMO with PZT-ferroelectric gate, but the magnitude of the effect is much smaller (a few percent) in the other three channels.
Journal ArticleDOI

Current-induced effect on the resistivity of epitaxial thin films of La0.7Ca0.3MnO3 and La0.85Ba0.15MnO3

TL;DR: In this article, the influence of the applied dc current on the resistance of epitaxial thin films in the absence of a magnetic field was studied and a significant change in the ratio of the peak resistance at different currents or current resistance was found.
Journal ArticleDOI

Correlation between electroresistance and magnetoresistance in La0.82Ca0.18MnO3 single crystal

TL;DR: In this paper, the resistivity of La082Ca018MnO3 single crystal has been investigated as a function of external magnetic field and separately under an applied current flow.
Journal ArticleDOI

Current-induced giant electroresistance in La 0.7 Sr 0.3 MnO 3 thin films

TL;DR: In this paper, the electroresistance (ER) and magnetoresistance (MR) of disordered metallic LSMO thin films with different thicknesses (t) were investigated and a metallic-to-insulating (M-I) transition in films with $t=80\mathrm{nm}.
Related Papers (5)