Journal ArticleDOI
Electro-thermal modeling of multifinger AlGaN/GaN HEMT device operation including thermal substrate effects.
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TLDR
AlGaN/GaN high electron mobility transistor (HEMT) device operation was modeled from the sub-micrometer scale to the substrate using a combination of an electro-thermal device model for the active device with realistic power dissipation within the device and a coupled three dimensional thermal model to account for the substrate.About:
This article is published in Microelectronics Reliability.The article was published on 2008-01-01. It has received 106 citations till now. The article focuses on the topics: High-electron-mobility transistor & Biasing.read more
Citations
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Journal ArticleDOI
Electrothermal Simulation and Thermal Performance Study of GaN Vertical and Lateral Power Transistors
Yuhao Zhang,Min Sun,Zhihong Liu,Daniel Piedra,Hyung-Seok Lee,Feng Gao,Tatsuya Fujishima,Tomas Palacios +7 more
TL;DR: In this article, the authors present self-consistent electrothermal simulations of single-finger and multifinger GaN vertical metal-oxide-semiconductor field effect transistors (MOSFETs) and lateral AlGaN/GaN high-electron-mobility transistors and compare their thermal performance.
Journal ArticleDOI
Investigation of High-Electric-Field Degradation Effects in AlGaN/GaN HEMTs
TL;DR: In this paper, high-electric-field degradation phenomena are investigated in GaN-capped AlGaN/GaN HEMTs by comparing experimental data with numerical device simulations.
Journal ArticleDOI
A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution
Martin Kuball,James W Pomeroy +1 more
TL;DR: In this paper, the authors review the use of Raman thermography to determine the temperature in and around the active area of semiconductor devices with submicron spatial and nanosecond temporal resolution.
Journal ArticleDOI
Channel Temperature Analysis of GaN HEMTs With Nonlinear Thermal Conductivity
TL;DR: In this article, an enhanced, closed-form expression for the thermal resistance, and thus, the channel temperature of AlGaN/gallium nitride (GaN) HEMTs, including the effect of the temperature-dependent thermal conductivity of GaN and SiC or Si substrates, is presented.
Journal ArticleDOI
Device-Level Thermal Management of Gallium Oxide Field-Effect Transistors
TL;DR: In this article, a 3D coupled electrothermal model was constructed based on the electrical and thermal characterization results of a MOSFET fabricated via homoepitaxy.
References
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Journal ArticleDOI
Undoped AlGaN/GaN HEMTs for microwave power amplification
L.F. Eastman,V. Tilak,Joseph A. Smart,B.M. Green,E.M. Chumbes,Roman Dimitrov,Hyungtak Kim,Oliver Ambacher,Nils Weimann,T. Prunty,M. J. Murphy,William J. Schaff,James R. Shealy +12 more
TL;DR: In this paper, a two-dimensional electron gas (2DEG) is induced using the strong spontaneous and piezoelectric polarization inherent in the AlGaN/GaN structures, and three-dimensional nonlinear thermal simulations are made to determine the temperature rise from heat dissipation in various geometries.
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Measurement of temperature in active high-power AlGaN/GaN HFETs using Raman spectroscopy
TL;DR: In this paper, the authors report on the noninvasive measurement of temperature, i.e., self-heating effects, in active AlGaN/GaN HFETs grown on sapphire and SiC substrates.
Journal ArticleDOI
Electron transport characteristics of GaN for high temperature device modeling
TL;DR: In this article, Monte Carlo simulations of electron transport based upon an analytical representation of the lowest conduction bands of bulk, wurtzite phase GaN are used to develop a set of transport parameters for devices with electron conduction in GaN.
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Thermal conductivity of GaN films: Effects of impurities and dislocations
TL;DR: In this paper, the lattice thermal conductivity of n-type wurtzite GaN with different densities of silicon dopants, point defects and threading dislocations is investigated.
Journal ArticleDOI
Measurement of temperature distribution in multifinger AlGaN/GaN heterostructure field-effect transistors using micro-Raman spectroscopy
Martin Kuball,S Rajasingam,Andrei Sarua,Michael J. Uren,Trevor Martin,B.T. Hughes,K.P. Hilton,R.S. Balmer +7 more
TL;DR: In this paper, the temperature distribution in multifinger high-power AlGaN/GaN heterostructure field effect transistors grown on SiC substrates was studied using micro-Raman spectroscopy.