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Journal ArticleDOI

Electroless plated nickel contacts to hydrogenated amorphous silicon

01 Dec 1994-Thin Solid Films (Elsevier)-Vol. 252, Iss: 2, pp 78-81
TL;DR: In this paper, the I-V characteristics of electroless plated-nickel phosphorus alloy (Ni) contacts to undoped amorphous silicon (a-Si:H) were compared with those of Nickel deposited by thermal evaporation.
About: This article is published in Thin Solid Films.The article was published on 1994-12-01. It has received 10 citations till now. The article focuses on the topics: Amorphous silicon & Amorphous solid.
Citations
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Patent
05 Mar 2010
TL;DR: In this article, the amorphous silicon film is formed using silane gas diluted with hydrogen and crystallization is attained in the crystallization process even with the continuous formation of the base film through the polysilicon film in the single film forming chamber.
Abstract: At present, a forming process of a base film through an amorphous silicon film is conducted in respective film forming chambers in order to obtain satisfactory films. When continuous formation of the base film through the amorphous silicon film is performed in a single film forming chamber with the above film formation condition, crystallization is not sufficiently attained in a crystallization process. By forming the amorphous silicon film using silane gas diluted with hydrogen, crystallization is sufficiently attained in the crystallization process even with the continuous formation of the base film through the amorphous silicon film in the single film forming chamber.

185 citations

Patent
16 Aug 2004
TL;DR: In this paper, the TFTs are fabricated using an active layer crystallized by making use of nickel, and the gate electrodes are comprising tantalum, and a heat treatment is performed to getter nickel element in the active layer and to drive it into the source/drain regions.
Abstract: There are disclosed TFTs that have excellent characteristics and can be fabricated with a high yield. The TFTs are fabricated, using an active layer crystallized by making use of nickel. Gate electrodes are comprising tantalum. Phosphorus is introduced into source/drain regions. Then, a heat treatment is performed to getter nickel element in the active layer and to drive it into the source/drain regions. At the same time, the source/drain regions can be annealed out. The gate electrodes of tantalum can withstand this heat treatment.

174 citations

Patent
19 Jul 2010
TL;DR: In this article, the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, and gate electrodes are in electrical contact through connectors with gate wirings formed from the second conductive layers.
Abstract: The invention primarily provides gate electrodes and gate wirings permitting large-sized screens for active matrix-type display devices, wherein, in order to achieve this object, the construction of the invention is a semiconductor device having, on the same substrate, a pixel TFT provided in a display region and a driver circuit TFT provided around the display region, wherein the gate electrodes of the pixel TFT and the driver circuit TFT are formed from a first conductive layer, the gate electrodes are in electrical contact through connectors with gate wirings formed from a second conductive layer, and the connectors are provided outside the channel-forming regions of the pixel TFT and the driver circuit TFT.

52 citations

Journal ArticleDOI
TL;DR: In this article, the adhesion and current-voltage characteristics of as-plated electroless nickel deposits on polished crystalline silicon activated using nickel and palladium were investigated. But, the results of the experiments were limited to a small number of simple experiments as a function of substrate doping polarity, doping level, plating area and plating duration.
Abstract: We present a study of the adhesion and current-voltage characteristics of as-plated electroless nickel deposits on polished crystalline silicon activated using nickel and palladium. A highlight of this study is the derivation of practically significant trends by collating the results of a large number of simple experiments as a function of substrate doping polarity, doping level, plating area, and plating duration. The study reveals that palladium activation is most effective on P + substrates while nickel activation is most effective on N + substrates, due to the requirement of substrate holes in the former activation and electrons in the latter. An activation process always improves adhesion, but, in some cases, degrades the electrical properties of the plating-silicon interface, because it introduces an intermediate silicide layer between nickel and silicon. Electroless nickel layer adheres better to nickel activated silicon, than to palladium activated silicon. However, the rectifying nature of the electroless nickel contacts on palladium activated silicon is superior to those on nickel activated silicon. Further, palladium silicide forms at 200°C, which is much lower than the temperature of 400°C required for nickel silicide formation.

22 citations

Patent
09 Nov 2005
TL;DR: In this paper, the authors describe a semiconductor device which is nonvolatile, easily manufactured, and can be additionally written, which includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors.
Abstract: The invention provides a semiconductor device which is non-volatile, easily manufactured, and can be additionally written A semiconductor device of the invention includes a plurality of transistors, a conductive layer which functions as a source wiring or a drain wiring of the transistors, and a memory element which overlaps one of the the plurality of transistors, and a conductive layer which functions as an antenna The memory element includes a first conductive layer, an organic compound layer and a phase change layer, and a second conductive layer stacked in this order The conductive layer which functions as an antenna and a conductive layer which functions as a source wiring or a drain wiring of the plurality of transistors are provided on the same layer

19 citations

References
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Journal ArticleDOI
TL;DR: In this article, the Schottky barrier solar cells were made by electroless nickel plating and they were shown to have good adhesion to the surface, higher barrier potential height, and lower reflectivity of light.
Abstract: Fabrication of Schottky‐barrier solar cells by electroless nickel plating can be recognized as a practical approach because cells made by this method are of lower cost, have good adhesion to the surface, higher barrier potential height, and lower reflectivity of light as compared with those of the vacuum‐evaporated devices. No expensive equipment, such as a vacuum evaporator or high‐temperature diffusion oven, is needed for this manufacture.

11 citations

Journal ArticleDOI

10 citations