Electron and hole drift velocity measurements in silicon and their empirical relation to electric field and temperature
TL;DR: In this article, the drift velocity of electrons and holes in silicon has been measured in a large range of the electric fields (from 3. 102to 6. 104V/cm) at temperatures up to 430 K. The mean square deviation was in all cases less than 3.8 percent.
Abstract: The drift velocity of electrons and holes in silicon has been measured in a large range of the electric fields (from 3 . 102to 6 . 104V/cm) at temperatures up to 430 K. The experimental data have been fitted with a simple formula for the temperatures of interest. The mean square deviation was in all cases less than 3.8 percent. A more general formula has also been derived which allows to obtain by extrapolation drift velocity data at any temperature and electric field.
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TL;DR: The first observation of saturating transistor characteristics in a graphene field-effect transistor is reported, demonstrating the feasibility of two-dimensional graphene devices for analogue and radio-frequency circuit applications without the need for bandgap engineering.
Abstract: The first observation of saturating transistor characteristics in a graphene field-effect transistor is reported. The saturation velocity is attributed to scattering by interfacial phonons in the silicon dioxide layer supporting the graphene channels. These results demonstrate the feasibility of graphene devices for analogue and radio-frequency circuit applications without the need for bandgap engineering.
1,600 citations
TL;DR: In this article, a review of different publications on the carrier mobilities in silicon is presented, and an approximated calculation procedure is proposed which permits a quick and accurate evaluation of these mobilities over a large range of temperatures, doping concentrations and injection levels.
Abstract: From a review of different publications on the carrier mobilities in silicon, the authors propose an approximated calculation procedure which permits a quick and accurate evaluation of these mobilities over a large range of temperatures, doping concentrations and injection-levels. The proposed relations are well adapted to semiconductor device simulation becuase they allow short computation times.
270 citations
TL;DR: MINIMOS as discussed by the authors is a software tool for numerical simulation of planar MOS transistors, which is able to calculate doping profiles from the technological parameters specified by the user, and a new mobility model has been implemented which takes into account the dependence on the impurity concentration, electric field, temperature and especially the distance to the Si-SiO 2 interface.
Abstract: We describe a user-oriented software tool-MINIMOS-for the two-dimensional numerical simulation of planar MOS transistors. The fundamental semiconductor equations are solved with sophisticated programming techniques to allow very low computer costs. The program is able to calculate the doping profiles from the technological parameters specified by the user. A new mobility model has been implemented which takes into account the dependence on the impurity concentration, electric field, temperature, and especially the distance to the Si-SiO 2 interface. The power of the program is shown by calculating the two-dimensional internal behavior of three MOST's with 1-µm gate length differing in respect to the ion-implantation steps. In this way, the threshold voltage shift by a shallow implantation and the suppression of punchthrough by a deep implantation are demonstrated. By calculating the output characteristics without and with mobility reduction, the essential influence of this effect is shown. From the subthreshold characteristics, the suppression of short-channel effects by ion implantation becomes apparent. The MINIMOS program is available for everyone for just the handling costs.
260 citations
TL;DR: In this paper, a number of interesting results concerning the parameterization of drift-velocity-vs-electric field relations in terms of mobility and saturation velocity are derived concerning the parameters of drift and saturation velocities.
Abstract: From an investigation of the behavior of the momentum distribution function of electrons or holes under scattering rate and momentum scaling transformations, a number of interesting results are derived concerning the parameterization of drift‐velocity–vs–electric‐field relations in terms of mobility and saturation velocity. Indeed it is determined that saturation velocity is invariant under scaling of the magnitude of the scattering rates, which alters mobility, while mobility is invariant under scaling of the magnitude of the momentum, which alters saturation velocity. This independence between mobility and saturation velocity is utilized to generalize to interfaces velocity‐field relations valid the the bulk. Using the transformation of drift velocity under both rate and momentum scaling, partial experimental data can be used to predict high‐field saturation velocities. These velocities need not be reduced due to higher scattering rates as much as their low‐field counterparts. Nonzero magnetic fields and nonuniform scaling are also considered.
192 citations
TL;DR: In this article, a rapid and repeatable laser-based hyperdoping method incorporating supersaturated gold dopant concentrations on the order of 10(20) cm(-3) into a single-crystal surface layer was proposed to induce room-temperature infrared subband gap photoresponse in silicon.
Abstract: Room-temperature infrared sub-band gap photoresponse in silicon is of interest for telecommunications, imaging and solid-state energy conversion Attempts to induce infrared response in silicon largely centred on combining the modification of its electronic structure via controlled defect formation (for example, vacancies and dislocations) with waveguide coupling, or integration with foreign materials Impurity-mediated sub-band gap photoresponse in silicon is an alternative to these methods but it has only been studied at low temperature Here we demonstrate impurity-mediated room-temperature sub-band gap photoresponse in single-crystal silicon-based planar photodiodes A rapid and repeatable laser-based hyperdoping method incorporates supersaturated gold dopant concentrations on the order of 10(20) cm(-3) into a single-crystal surface layer ~150 nm thin We demonstrate room-temperature silicon spectral response extending to wavelengths as long as 2,200 nm, with response increasing monotonically with supersaturated gold dopant concentration This hyperdoping approach offers a possible path to tunable, broadband infrared imaging using silicon at room temperature
185 citations
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TL;DR: In this article, the authors presented theoretical calculations of the large-signal admittance and efficiency achievable in a silicon p-n-v-ns Read IMPATT diode.
Abstract: This paper presents theoretical calculations of the large-signal admittance and efficiency achievable in a silicon p-n-v-ns Read IMPATT diode. A simplified theory is employed to obtain a starting design. This design is then modified to achieve higher efficiency operation as specific device limitations are reached in large-signal (computer) operation. Self-consistent numerical solutions are obtained for equations describing carrier transport, carrier generation, and space-charge balance. The solutions describe the evolution in time of the diode and its associated resonant circuit. Detailed solutions are presented of the hole and electron concentrations, electric field, and terminal current and voltage at various points in time during a cycle of oscillation. Large-signal values of the diode's negative conductance, susceptance, average voltage, and power-generating efficiency are presented as a function of oscillation amplitude for a fixed average current density. For the structure studied, the largest microwave power-generating efficiency (18 percent at 9.6 GHz) has been obtained at a current density of 200 A/cm2, but efficiencies near 10 percent were obtained over a range of current density from 100 to 1000 A/cm2.
2,042 citations
01 Dec 1967
TL;DR: In this article, the experimental dependence of carrier mobilities on doping density and field strength in silicon has been investigated and the curve-fitting procedures are described, which fit the experimental data.
Abstract: Equations are presented which fit the experimental dependence of carrier mobilities on doping density and field strength in silicon. The curve-fitting procedures are described.
1,539 citations
TL;DR: In this paper, the experimental results for electrons obtained with the time-of-flight technique are presented for temperatures between 8 and 300 and fields ranging between 1.5 and 5 \ifmmode\times\else\texttimes\fi{} ${10}^{4}$ V ${\mathrm{cm}}^{\ensuremath{-}1} 1}$ oriented along crystallographic directions.
Abstract: Experimental results for electrons obtained with the time-of-flight technique are presented for temperatures between 8 and 300\ifmmode^\circ\else\textdegree\fi{}K and fields ranging between 1.5 and 5 \ifmmode\times\else\texttimes\fi{} ${10}^{4}$ V ${\mathrm{cm}}^{\ensuremath{-}1}$ oriented along $〈111〉$, $〈110〉$, and $〈100〉$ crystallographic directions. At 8\ifmmode^\circ\else\textdegree\fi{}K the dependence of the transit time upon sample thickness has allowed a measurement of the valley repopulation time when the electric field is $〈100〉$ oriented. These experimental results have been interpreted with Monte Carlo calculations in the same ranges of temperature and field. The theoretical model includes the many-valley structure of the Si conduction band, acoustic intravalley scattering with correct momentum and energy relaxation and correct equilibrium phonon population, several intervalley scatterings, and ionized impurity scattering.
418 citations
TL;DR: In this article, the drift velocity of electrons and holes in high purity silicon has been measured, with the time of flight technique, as a function of electric field (0·1−50 KV/cm) at several temperatures between 77 and 300°K.
248 citations
TL;DR: Drift mobility measurements have been made on eleven silicon single crystals ranging in resistivity from 19 to 180 ohm cm as mentioned in this paper, and the drift mobility of electrons and holes in the purest $p$-type crystals and of holes in purest$n$type crystals can be expressed by the formulas.
Abstract: Drift mobility measurements have been made on eleven silicon single crystals ranging in resistivity from 19 to 180 ohm cm The drift mobility of electrons (${\ensuremath{\mu}}_{n}$) in the purest $p$-type crystals and of holes (${\ensuremath{\mu}}_{p}$) in the purest $n$-type crystals can be expressed by the formulas ${\ensuremath{\mu}}_{n}=(21\ifmmode\pm\else\textpm\fi{}02)\ifmmode\times\else\texttimes\fi{}{10}^{9}{T}^{\ensuremath{-}25\ifmmode\pm\else\textpm\fi{}01}$ and ${\ensuremath{\mu}}_{p}=(23\ifmmode\pm\else\textpm\fi{}01)\ifmmode\times\else\texttimes\fi{}{10}^{9}{T}^{\ensuremath{-}27\ifmmode\pm\else\textpm\fi{}01}$ between 160 and 400\ifmmode^\circ\else\textdegree\fi{}K At 300\ifmmode^\circ\else\textdegree\fi{}K ${\ensuremath{\mu}}_{n}$ and ${\ensuremath{\mu}}_{p}$ are 1350\ifmmode\pm\else\textpm\fi{}100 and 480\ifmmode\pm\else\textpm\fi{}15 ${\mathrm{cm}}^{2}$ (volt ${\mathrm{s}\mathrm{e}\mathrm{c})}^{\ensuremath{-}1}$, respectively The conductivity of some of these crystals was measured between 78 and 400\ifmmode^\circ\else\textdegree\fi{}K, and provides independent evidence for the temperature dependences of mobility quoted in the foregoingBelow 100\ifmmode^\circ\else\textdegree\fi{}K hole mobility in the $n$-type crystals decreases markedly, probably at least in part because of short-time trapping of the injected holes
183 citations