Journal ArticleDOI
Electron Interaction Effects on Recombination Spectra
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TLDR
In this article, the authors suggest a possible origin of low energy tails observed in radiative recombination when at least one of the participating bands is degenerate and make an order-of-magnitude calculation which shows that the effect can have the same origin as similar effects in the soft X-ray emission spectra of metals.Abstract:
This note suggests a possible origin of low energy tails observed in radiative recombination when at least one of the participating bands is degenerate. An order-of-magnitude calculation is made which shows that the effect can have the same origin as similar effects in the soft X-ray emission spectra of metals. Furthermore, it is suggested that the analysis of experimental tails can lead to information about the screening lengths in the Coulomb interaction between electrons in bands.
Dieser Beitrag weist auf eine mogliche Ursache fur die Auslaufer niedriger Energie hin, die bei der strahlenden Rekombination beobachtet werden, wenn eines der beteiligten Bander entartet ist. Eine grosenordnungsmasige Abschatzung wird durchgefuhrt, die zeigt, das der Effekt die gleiche Ursache haben kann wie ahnliche Effekte bei Emissionspektren weicher Rontgenstrahlung der Metalle. Weiterhin wird darauf hingewiesen, das eine Analyse der experimentell gefundenen Auslaufer zu einer Information uber die Abschirmlangen der Coulombwechselwirkung zwischen den Elektronen in den Bandern fuhren kann.read more
Citations
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Temperature dependence of the radiative recombination coefficient in silicon
TL;DR: In this article, the temperature dependence of the intrinsic radiative recombination coefficient B in silicon was measured from 100 to 400 °K and a unique theory of the indirect radiative band-to-band and free exciton recombination was given.
Journal ArticleDOI
Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires
TL;DR: The influence of the growth parameters on the photoluminescence (PL) spectra has been investigated for samples with columnar morphology, either with InN columns on original substrates or as free-standing nanowires.
Journal ArticleDOI
Photoluminescence spectroscopy of crystalline semiconductors
TL;DR: An overview of the current state-of-the-art of photoluminescence (PL) spectroscopy as a characterization tool in the study of semiconductors is given in this article.
Journal ArticleDOI
Transverse and longitudinal mode control in semiconductor injection lasers
TL;DR: In this article, the authors analyzed the oscillating transverse and longitudinal modes in semiconductor injection lasers using the density matrix formalism and derived the optimal range to obtain stable fundamental transverse mode operation with respect to several guiding factors.
References
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Journal ArticleDOI
Spontaneous and Stimulated Recombination Radiation in Semiconductors
Gordon J Lasher,Frank Stern +1 more
TL;DR: In this article, the spectral line shapes of the radiation produced by band-to-band recombination of excess carriers in semi-conductors are calculated under the assumption that the momentum matrix element is the same for all initial and final states, i.e., that there is no momentum selection rule.
Journal ArticleDOI
Thomas-Fermi Approach to Impure Semiconductor Band Structure
TL;DR: In this paper, the density of states in highly impure semiconductors is studied using a semiclassical or Thomas-Fermi type approximation, where the local density is assumed to be proportional to the local potential.
Journal ArticleDOI
Energy Levels of a Disordered Alloy
TL;DR: In this paper, a study of the one-electron energy levels of disordered alloys by means of perturbation theory is made, extending the results of Nordheim and Muto.
Journal ArticleDOI
Infrared Absorption in Heavily Doped n -Type Germanium
TL;DR: In this paper, the infrared absorption spectrum of compensated and uncompensated heavily doped $n$-type germanium at 80, 200, and 295\ifmmode^\circ\else\text degree\fi{}K is reported.
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Spontaneous and Stimulated Recombination Radiation in Semiconductors
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