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Journal ArticleDOI

Electron Interaction Effects on Recombination Spectra

P. T. Landsberg
- 01 Jan 1966 - 
- Vol. 15, Iss: 2, pp 623-626
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TLDR
In this article, the authors suggest a possible origin of low energy tails observed in radiative recombination when at least one of the participating bands is degenerate and make an order-of-magnitude calculation which shows that the effect can have the same origin as similar effects in the soft X-ray emission spectra of metals.
Abstract
This note suggests a possible origin of low energy tails observed in radiative recombination when at least one of the participating bands is degenerate. An order-of-magnitude calculation is made which shows that the effect can have the same origin as similar effects in the soft X-ray emission spectra of metals. Furthermore, it is suggested that the analysis of experimental tails can lead to information about the screening lengths in the Coulomb interaction between electrons in bands. Dieser Beitrag weist auf eine mogliche Ursache fur die Auslaufer niedriger Energie hin, die bei der strahlenden Rekombination beobachtet werden, wenn eines der beteiligten Bander entartet ist. Eine grosenordnungsmasige Abschatzung wird durchgefuhrt, die zeigt, das der Effekt die gleiche Ursache haben kann wie ahnliche Effekte bei Emissionspektren weicher Rontgenstrahlung der Metalle. Weiterhin wird darauf hingewiesen, das eine Analyse der experimentell gefundenen Auslaufer zu einer Information uber die Abschirmlangen der Coulombwechselwirkung zwischen den Elektronen in den Bandern fuhren kann.

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Citations
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Journal ArticleDOI

Temperature dependence of the radiative recombination coefficient in silicon

TL;DR: In this article, the temperature dependence of the intrinsic radiative recombination coefficient B in silicon was measured from 100 to 400 °K and a unique theory of the indirect radiative band-to-band and free exciton recombination was given.
Journal ArticleDOI

Photoluminescence and Intrinsic Properties of MBE-Grown InN Nanowires

TL;DR: The influence of the growth parameters on the photoluminescence (PL) spectra has been investigated for samples with columnar morphology, either with InN columns on original substrates or as free-standing nanowires.
Journal ArticleDOI

Photoluminescence spectroscopy of crystalline semiconductors

TL;DR: An overview of the current state-of-the-art of photoluminescence (PL) spectroscopy as a characterization tool in the study of semiconductors is given in this article.
Journal ArticleDOI

Transverse and longitudinal mode control in semiconductor injection lasers

TL;DR: In this article, the authors analyzed the oscillating transverse and longitudinal modes in semiconductor injection lasers using the density matrix formalism and derived the optimal range to obtain stable fundamental transverse mode operation with respect to several guiding factors.
References
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Journal ArticleDOI

Spontaneous and Stimulated Recombination Radiation in Semiconductors

Gordon J Lasher, +1 more
- 20 Jan 1964 - 
TL;DR: In this article, the spectral line shapes of the radiation produced by band-to-band recombination of excess carriers in semi-conductors are calculated under the assumption that the momentum matrix element is the same for all initial and final states, i.e., that there is no momentum selection rule.
Journal ArticleDOI

Thomas-Fermi Approach to Impure Semiconductor Band Structure

TL;DR: In this paper, the density of states in highly impure semiconductors is studied using a semiclassical or Thomas-Fermi type approximation, where the local density is assumed to be proportional to the local potential.
Journal ArticleDOI

Energy Levels of a Disordered Alloy

TL;DR: In this paper, a study of the one-electron energy levels of disordered alloys by means of perturbation theory is made, extending the results of Nordheim and Muto.
Journal ArticleDOI

Infrared Absorption in Heavily Doped n -Type Germanium

C. Haas
- 15 Mar 1962 - 
TL;DR: In this paper, the infrared absorption spectrum of compensated and uncompensated heavily doped $n$-type germanium at 80, 200, and 295\ifmmode^\circ\else\text degree\fi{}K is reported.
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