Journal ArticleDOI
Electron Mobility in High‐Purity GaAs
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TLDR
In this paper, a combination of polar optical phonon, piezoelectric acoustic photon, deformation potential acoustic phonon and ionized impurity scattering in the relaxation time approximation is shown to give results which are in good agreement with the temperature and concentration dependence of the electron mobility in high-purity GaAs.Abstract:
The combination of polar optical phonon, piezoelectric acoustic photon, deformation potential acoustic phonon, ionized impurity, and neutral impurity scattering in the relaxation time approximation is shown to give results which are in good agreement with the temperature and concentration dependence of the electron mobility in high‐purity GaAs. For polar optical phonon scattering a relaxation time is defined at each temperature from Ehrenreich's variational calculation. Since most of the parameters are well known, the only adjustable parameter in the calculation is the conduction band deformation potential with the best agreement with experiment given by | E1 | = 7.0 eV. Using this value a 77°K lattice scattering limited mobility of 240 000 cm2/V sec is obtained.read more
Citations
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Electrical characterization of epitaxial layers
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Ab initio electron mobility and polar phonon scattering in GaAs
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References
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Journal ArticleDOI
Deformation Potentials and Mobilities in Non-Polar Crystals
John Bardeen,William Shockley +1 more
TL;DR: In this article, the authors used the method of effective mass, extended to apply to gradual shifts in energy bands resulting from deformations of the crystal lattice, to estimate the interaction between electrons of thermal energy and the acoustical modes of vibration.
Journal ArticleDOI
Transport properties of a many-valley semiconductor
TL;DR: In this article, the authors considered the many-valley model of semiconductors, where the band edge occurs at a number of equivalent points K(i) in wave number space, and the surfaces of constant energy are multiple ellipsoids, one centered on each of these points.
Journal ArticleDOI
Band Structure and Electron Transport of GaAs
TL;DR: In this article, the authors reviewed and analyzed existing experimental data on GaAs to yield the band structure in the vicinity of the band edges as well as the parameters characterizing the bands summarized in Fig. 1 of this paper.
Journal ArticleDOI
Band Structure and Transport Properties of Some 3–5 Compounds
TL;DR: In this article, the experimental information relevant to the band structure of the compounds InSb, InAs, GaSb and some of their alloys is synthesized and interpreted in terms of a consistent theoretical picture which exploits the close relationship linking the band structures of the group 4 and 3-5 semiconductors.