Journal ArticleDOI
Electrothermal Initiation of an Electronic Switching Mechanism in Semiconducting Glasses
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TLDR
In this paper, an analysis of the switching mechanism in semiconducting glasses is given which indicates that the actual switching involves electronic processes which prevent a thermal runaway, and that the rapid and reversible transition between the highly resistive and conductive states can have a thermal origin from Joule's heating of a current channel.Abstract:
An analysis of the switching mechanism in semiconducting glasses is given which indicates that the actual switching involves electronic processes which prevent a thermal runaway. The rapid and reversible transition between the highly resistive and conductive states can have a thermal origin from Joule's heating of a current channel. Double tunneling, forced by the characteristic temperature profile, and current‐density saturation are suggested as an explanation of the characteristics in the conductive state.read more
Citations
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Journal ArticleDOI
Electrical phenomena in amorphous oxide films
TL;DR: In this article, a review of the observed properties of metal-insulator-metal devices involving such insulating layers, and the mechanisms which have been proposed for their operation are discussed.
Journal ArticleDOI
An overview of phase-change memory device physics
Manuel Le Gallo,Abu Sebastian +1 more
Journal ArticleDOI
Switching phenomenon in evaporated SeGeAs thin films of amorphous chalcogenide glass
TL;DR: In this article, both dynamic and static I-V characteristic curves of amorphous thin films of Se 75 Ge 25− x As x (5 ⩽ × ¾ 20) for switching and memory behavior have been studied.
Journal ArticleDOI
The origin of prebreakdown electron emission from vacuum-insulated high voltage electrodes
TL;DR: In this paper, a brief review of the recent experimental evidence that has established the non-metallic origin of pre-breakdown electron emission currents is presented, followed by a discussion of two new models of the emission mechanism, both of which are based on a composite microstructure consisting of a semiconducting/insulating microinclusion in intimate contact with a metallic substrate electrode.
Journal ArticleDOI
Memory switching phenomena in thin films of chalcogenide semiconductors
N.A. Hegab,M. Fadel,K Sedeek +2 more
TL;DR: In this article, the currentvoltage characteristic in the OFF-state and switching phenomenon in Ge 20 M 75 Bi 5 (M S, Se or Te) chalcogenide semiconductor thin films was investigated.
References
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Journal ArticleDOI
Reversible Electrical Switching Phenomena in Disordered Structures
TL;DR: In this paper, a rapid and reversible transition between a highly resistive and a conductive state effected by an electric field was described in various types of disordered materials, particularly amorphous semiconductors covering a wide range of compositions.
Journal ArticleDOI
Conduction and Electrical Switching in Amorphous Chalcogenide Semiconductor Films
TL;DR: In this paper, experimental evidence is presented bearing on the low current conduction and on the rapid electrical switching phenomena that have been found in thin films of certain amorphous chalcogenide semiconducting materials.
Journal ArticleDOI
The Conduction Mechanism of Self-Compensated Highly Disordered Semiconductors (A Possible Model for Semiconducting Glasses)
TL;DR: In this article, it was shown that predominant p-type conduction occurs because of a higher effective level density in the narrower valence band, which usually is not compensated by a lower hole mobility due to a high effective mass of holes.
Journal ArticleDOI
The Conduction Mechanism of Highly Disordered Semiconductors (A Possible Model for Semiconducting Glasses) II. Influence of Charged Defects
TL;DR: In this article, the saddle point between Coulomb-repulsive centers can act as a potential barrier, above which conductivity takes place, if the average distance between these saddle points is small compared to the mean free path of the carriers.