Elucidation of the initial stages of the oxidation of silicon (111) using scanning tunneling microscopy and spectroscopy
31 May 1990-The Journal of Physical Chemistry (American Chemical Society)-Vol. 94, Iss: 11, pp 4400-4403
TL;DR: In this paper, the authors used scanning tunneling microscopy, atom-resolved tunneling spectroscopy, and electronic structure calculations to determine the nature of the adsorption state of oxygen in the initial stages of the oxidation of Si(111).
Abstract: We use scanning tunneling microscopy, atom-resolved tunneling spectroscopy, and electronic structure calculations to determine the nature of the adsorption state of oxygen in the initial stages of the oxidation of Si(111). We are able to directly image two states of adsorbed oxygen. One of them is identified as a Si adatom site with one oxygen atom inserted in one of the back bonds, while the other involves an oxygen atom tying up the adatom dangling bond with, most likely, another oxygen inserted in one of the back bonds. As the coverage is increased toward the monolayer, the latter site becomes the dominant one.
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TL;DR: In this article, the interaction of O2 and O with Si(111) and Si(100) at a fundamental level is reviewed, and it is shown that O2 can be enhanced using simultaneous ion or electron bombardment.
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TL;DR: Grooves a few nanometers wide can be formed on a Si(111) surface with a scanning tunneling microscope when the tip is above a critical voltage, which may provide a promising approach to nanodevice fabrication.
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TL;DR: In this paper, the first intermediate formed in the molecular oxygen reaction is chemisorbed O2(a), e.g., a peroxy radical or a peroxide bridge.
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