Emerging carbon nanotube electronic circuits, modeling and performance
Yao Xu,Ashok Srivastava,J. M. Marulanda +2 more
- Vol. 2010, pp 566-569
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TLDR
Cadence/Spectre simulations show that CNT-FET circuits can operate at GHz frequencies and CNT interconnects are able to provide enough bandwidth for GHz operation of CNT -FETs circuits.Abstract:
In this paper, a CNT interconnect model is presented and combined with a CNT-FET model to study the performance of CNT-FET circuits at very high frequencies. An all complementary CNT-FET inverter pair using CNT interconnection is modeled and characterized. Cadence/Spectre simulations show that CNT-FET circuits can operate at GHz frequencies and CNT interconnects are able to provide enough bandwidth for GHz operation of CNT-FETs circuits.read more
Citations
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Journal ArticleDOI
Carbon nanotubes for next generation very large scale integration interconnects
TL;DR: In this article, the authors investigated the application of one-dimensional fluid model in modeling of electron transport in carbon nanotubes and equivalent circuits for interconnections and compared the performances with the currently used copper interconnects in very large-scale integration (VLSI) circuits.
Book ChapterDOI
Carbon Nanotube- and Graphene Based Devices, Circuits and Sensors for VLSI Design
TL;DR: In this article, the authors classified carbon nanotubes into two groups: single-walled (SWNTs) and multi-wall (MWNTs), and showed that SWNTs have one shell or wall and whose diameter ranges from 0.4 to 4 nm, while MWNTs contain several concentric shells and their diameter ranging from several nanometers to tens of nanometers.
Current transport modeling of carbon nanotube field effect transistors for analysis and design of integrated circuits
Marulanda Prado,Jose Mauricio +1 more
TL;DR: Srivastava et al. as discussed by the authors proposed a two-terminal CNT-FET, which is an energy-band diagram of the two-dimensional carbon nanotubes.
Proceedings ArticleDOI
Performance comparison between single wall carbon nanotube bundle and multiwall carbon nanotube for global interconnects
TL;DR: In this article, the authors present a comprehensive analysis of propagation delay for both MWNT and SWNT bundles at different interconnect lengths (global) and show a comparison of area for equivalent number of SWNTs in bundle and shells in MWNTs.
Proceedings ArticleDOI
Comparison of propagation delay characteristics for single-walled CNT bundle and multiwalled CNT in global VLSI interconnects
TL;DR: In this article, the authors present a comprehensive analysis of propagation delay for both MWNT and SWNT bundles at different interconnect lengths (global) and shows a comparison of equivalent number of SWNTs in bundle and shells in MWNTs for specified propagation delays and lengths.
References
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Journal ArticleDOI
Room-temperature transistor based on a single carbon nanotube
TL;DR: In this paper, the fabrication of a three-terminal switching device at the level of a single molecule represents an important step towards molecular electronics and has attracted much interest, particularly because it could lead to new miniaturization strategies in the electronics and computer industry.
Journal ArticleDOI
Crystalline Ropes of Metallic Carbon Nanotubes
Andreas Thess,R. S. Lee,Pavel Nikolaev,Hongjie Dai,Pierre Petit,J. Robert,Chunhui Xu,Young Hee Lee,Seong-Gon Kim,Andrew G. Rinzler,Daniel T. Colbert,Gustavo E. Scuseria,David Tománek,John E. Fischer,Richard E. Smalley +14 more
TL;DR: X-ray diffraction and electron microscopy showed that fullerene single-wall nanotubes (SWNTs) are nearly uniform in diameter and that they self-organize into “ropes,” which consist of 100 to 500 SWNTs in a two-dimensional triangular lattice with a lattice constant of 17 angstroms.
Book
Fields and Waves in Communication Electronics
TL;DR: In this article, two-and three-dimensional boundary value problems are studied for two-dimensional waveguides with Cylindrical Conducting Boundaries (CCLB).
Journal ArticleDOI
Logic circuits with carbon nanotube transistors
TL;DR: This work demonstrates logic circuits with field-effect transistors based on single carbon nanotubes that exhibit a range of digital logic operations, such as an inverter, a logic NOR, a static random-access memory cell, and an ac ring oscillator.
Book
Solid state electronic devices
TL;DR: The Solid State Electronic Devices (SSED) as discussed by the authors is an introductory book on semiconductor materials, physics, devices, and technology, which aims to: 1) develop basic semiconductor physics concepts, and 2) provide a sound understanding of current semiconductor devices and technology.