Journal ArticleDOI
Emission of spin waves by a magnetic multilayer traversed by a current.
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TLDR
In this paper, the interaction between spin waves and itinerant electrons is considerably enhanced in the vicinity of an interface between normal and ferromagnetic layers in metallic thin films, leading to a local increase of the Gilbert damping parameter which characterizes spin dynamics.Abstract:
The interaction between spin waves and itinerant electrons is considerably enhanced in the vicinity of an interface between normal and ferromagnetic layers in metallic thin films. This leads to a local increase of the Gilbert damping parameter which characterizes spin dynamics. When a dc current crosses this interface, stimulated emission of spin waves is predicted to take place. Beyond a certain critical current density, the spin damping becomes negative; a spontaneous precession of the magnetization is predicted to arise. This is the magnetic analog of the injection laser. An extra dc voltage appears across the interface, given by an expression similar to that for the Josephson voltage across a superconducting junction. \textcopyright{} 1996 The American Physical Society.read more
Citations
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Journal ArticleDOI
Spintronics: a spin-based electronics vision for the future.
Stuart A. Wolf,Stuart A. Wolf,David D. Awschalom,Robert A. Buhrman,J. M. Daughton,S. von Molnar,Michael L. Roukes,Almadena Chtchelkanova,Daryl Treger +8 more
TL;DR: This review describes a new paradigm of electronics based on the spin degree of freedom of the electron, which has the potential advantages of nonvolatility, increased data processing speed, decreased electric power consumption, and increased integration densities compared with conventional semiconductor devices.
Journal ArticleDOI
Spintronics: Fundamentals and applications
TL;DR: Spintronics, or spin electronics, involves the study of active control and manipulation of spin degrees of freedom in solid-state systems as discussed by the authors, where the primary focus is on the basic physical principles underlying the generation of carrier spin polarization, spin dynamics, and spin-polarized transport.
Journal ArticleDOI
Magnetic Domain-Wall Racetrack Memory
TL;DR: The racetrack memory described in this review comprises an array of magnetic nanowires arranged horizontally or vertically on a silicon chip and is an example of the move toward innately three-dimensional microelectronic devices.
Journal ArticleDOI
Spin-torque switching with the giant spin hall effect of tantalum
TL;DR: In this paper, a giant spin Hall effect (SHE) in β-tantalum was shown to generate spin currents intense enough to induce spin-torque switching of ferromagnets at room temperature.
Journal ArticleDOI
A perpendicular-anisotropy CoFeB–MgO magnetic tunnel junction
Shoji Ikeda,Katsuya Miura,Katsuya Miura,H. Yamamoto,H. Yamamoto,K. Mizunuma,Huadong Gan,M. Endo,Shun Kanai,Jun Hayakawa,Fumihiro Matsukura,Hideo Ohno +11 more
TL;DR: Inter interfacial perpendicular anisotropy between the ferromagnetic electrodes and the tunnel barrier of the MTJ is used by employing the material combination of CoFeB-MgO, a system widely adopted to produce a giant tunnel magnetoresistance ratio in MTJs with in-plane an isotropy.
References
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Book
The physical principles of magnetism
TL;DR: In this paper, the authors present a review of the properties of the magnetic field and its properties in terms of properties such as: 1. The magnetic field, the magnetization vector, the Langevin Formula for Diamagnetic Susceptibility, and the magnetic shell.