scispace - formally typeset
Proceedings ArticleDOI

Energy band gap characteristics of GaP 1−x Bi x calculated using Quantum Dielectric Theory and Valence Band Anticrossing model

Reads0
Chats0
TLDR
In this paper, a model based on Quantum Dielectric Theory (QDT) and Valence Band Anticrossing (VBAC) interaction was used to explain the composition dependence of band gap for GaP1-xBix.
Abstract
Mathematical models based on Quantum Dielectric Theory(QDT) and Valence Band Anticrossing (VBAC) interaction have been used to explain the composition dependence of band gap for GaP1-xBix. The theoretically predicted bandgap of GaBi using QDT is used to calculate the band structure for the ternary alloy.

read more

References
More filters
Journal ArticleDOI

Band parameters for III–V compound semiconductors and their alloys

TL;DR: In this article, the authors present a comprehensive, up-to-date compilation of band parameters for the technologically important III-V zinc blende and wurtzite compound semiconductors.
Journal ArticleDOI

Temperature dependence of the energy gap in semiconductors

TL;DR: In this article, a relation for the variation of the energy gap (E g ) with temperature (T ) in semiconductors is proposed. And the equation satisfactorily represents the experimental data for diamond, Si, Ge, 6H-SiC, GaAs, InP and InAs.
Journal ArticleDOI

Quantum Dielectric Theory of Electronegativity in Covalent Systems. I. Electronic Dielectric Constant

TL;DR: In this paper, the Clausius-Mossotti theory of the electronic dielectric constant of diatomic crystals is extended to the case of the diamond, zincblende, wurtzite, and rock-salt types.
Journal ArticleDOI

Electronic Structures of Semiconductor Alloys

TL;DR: In this paper, the problem of the band structure of semiconductor alloy systems is treated by both the dielectric two-band method and by the use of an empirical (local) pseudopotential.
Journal ArticleDOI

Quantum Dielectric Theory of Electronegativity in Covalent Systems. II. Ionization Potentials and Interband Transition Energies

TL;DR: In this paper, a dielectric two-band model was proposed to predict ionization potentials and electronic band structures of binary compounds, where only the density and dielectrically defined electronegativity difference are required as input data.
Related Papers (5)