Energy band-structure estimation of semiconductor nanotubes with consideration of momentum space quantization
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139,059 citations
"Energy band-structure estimation of..." refers background or methods in this paper
...The matrix elements for different semiconductors (Si, Ge, GaAs and InP) are taken from Vogl et al [8]....
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...THEORETICAL MODELING Band structures of bulk semiconductors and nanotubes are calculated by using the sp3s*-model [8] including the effect of spin orbit coupling [9]....
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1,632 citations
"Energy band-structure estimation of..." refers background in this paper
...34 eV for Si, Ge, GaAs and InP, respectively [10]....
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1,045 citations
375 citations
"Energy band-structure estimation of..." refers methods in this paper
...The spin-orbit parameters for different semiconductors (Si, Ge, GaAs and InP) are taken from Chadi et al [9]....
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...The relevant Hamiltonian matrix with spin-orbit parameters for anionic and cationic orbitals can be written as, =casoH / 0000 0000 0000 0000 0000 0000 /// /// /// /// /// /// ////// cacaca cacaca cacaca cacaca cacaca cacaca cacacacacaca iZ iiY iX iZ iiY iX ZYXZYX δδ δδ δδ δδ δδ δδ −− − − − − (3) The spin-orbit parameters for different semiconductors (Si, Ge, GaAs and InP) are taken from Chadi et al [9]....
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...THEORETICAL MODELING Band structures of bulk semiconductors and nanotubes are calculated by using the sp3s*-model [8] including the effect of spin orbit coupling [9]....
[...]
47 citations
"Energy band-structure estimation of..." refers background in this paper
...Reports are available on the fabrication of single-walled and multi-walled nanotubes by employing vapor-liquid-solid (VLS) [1], chemical vapor deposition (CVD) [3], thermal chemical process [4] and surface stress imbalance technique [2]....
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