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Proceedings ArticleDOI

Energy band-structure estimation of semiconductor nanotubes with consideration of momentum space quantization

TL;DR: In this paper, the effect of quantum confinement in the band structure of semiconductor nanotubes is investigated and the confinement of electrons in the momentum space is incorporated in the sp3s∗ model to determine band structure.
Abstract: In the current work, the effect of quantum confinement in the band structure of semiconductor nanotubes is investigated. The confinement of electrons in the momentum space is incorporated in sp3s∗ model to determine band structure of the nanotubes. The spherically symmetric r-point of nanotube energy bands is observed to split into cylindrically symmetric r′ and spherically symmetric r″ points due to confinement in transverse directions. Such splitting of r-point leads to increase the band gap ofnanotubes which further increases to a large extent with the decrease of nanotube core diameter and wall thickness. Such semiconductor nanotubes exhibit novel properties which can be exploited for developing novel quantum electronic devices.
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Book ChapterDOI

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01 Jan 2012

139,059 citations


"Energy band-structure estimation of..." refers background or methods in this paper

  • ...The matrix elements for different semiconductors (Si, Ge, GaAs and InP) are taken from Vogl et al [8]....

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  • ...THEORETICAL MODELING Band structures of bulk semiconductors and nanotubes are calculated by using the sp3s*-model [8] including the effect of spin orbit coupling [9]....

    [...]

Book
01 Jan 1972
TL;DR: The Solid State Electronic Devices (SSED) as discussed by the authors is an introductory book on semiconductor materials, physics, devices, and technology, which aims to: 1) develop basic semiconductor physics concepts, and 2) provide a sound understanding of current semiconductor devices and technology.
Abstract: For undergraduate electrical engineering students or for practicing engineers and scientists interested in updating their understanding of modern electronics One of the most widely used introductory books on semiconductor materials, physics, devices and technology, Solid State Electronic Devices aims to: 1) develop basic semiconductor physics concepts, so students can better understand current and future devices; and 2) provide a sound understanding of current semiconductor devices and technology, so that their applications to electronic and optoelectronic circuits and systems can be appreciated. Students are brought to a level of understanding that will enable them to read much of the current literature on new devices and applications. Teaching and Learning Experience This program will provide a better teaching and learning experience-for you and your students. It will help: *Provide a Sound Understanding of Current Semiconductor Devices: With this background, students will be able to see how their applications to electronic and optoelectronic circuits and systems are meaningful. *Incorporate the Basics of Semiconductor Materials and Conduction Processes in Solids: Most of the commonly used semiconductor terms and concepts are introduced and related to a broad range of devices. *Develop Basic Semiconductor Physics Concepts: With this background, students will be better able to understand current and future devices.

1,632 citations


"Energy band-structure estimation of..." refers background in this paper

  • ...34 eV for Si, Ge, GaAs and InP, respectively [10]....

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Journal ArticleDOI
P. Vogl1
TL;DR: In this article, a semi-empirical tight-binding theory of energy bands in zincblende and diamond structure materials is developed and applied to the following sp3-bonded semiconductors: C, Si, Ge, Sn, SiC, GaP, GaAs, GaSb, InP, InAs, InSb.

1,045 citations

Journal ArticleDOI
D. J. Chadi1
TL;DR: In this article, the electronic structures of C, Si, Ge, $\ensuremath{\alpha}\ensure-math{-}\mathrm{Sn}$, GaP, GaAs, GaSb, InP, InAs, InSb and ZnSe are studied using a tight-binding approach which includes spin-orbit interactions.
Abstract: The electronic structures of C, Si, Ge, $\ensuremath{\alpha}\ensuremath{-}\mathrm{Sn}$, GaP, GaAs, GaSb, InP, InAs, InSb, and ZnSe are studied using a tight-binding approach which includes spin-orbit interactions. The spin-orbit splittings ${\mathrm{\ensuremath{\Delta}}}_{0}$ and ${\mathrm{\ensuremath{\Delta}}}_{1}$ are related to atomic spin-orbit splittings and optical gaps. The variation of ${\mathrm{\ensuremath{\Delta}}}_{0}$ as a function of chemical composition is studied for a number of alloy systems. It is shown that the nonlinear dependence of ${\mathrm{\ensuremath{\Delta}}}_{0}$ on alloy composition is a disorder-induced effect. The bowing parameter is calculated in terms of tight-binding parameters and band gaps.

375 citations


"Energy band-structure estimation of..." refers methods in this paper

  • ...The spin-orbit parameters for different semiconductors (Si, Ge, GaAs and InP) are taken from Chadi et al [9]....

    [...]

  • ...The relevant Hamiltonian matrix with spin-orbit parameters for anionic and cationic orbitals can be written as, =casoH / 0000 0000 0000 0000 0000 0000 /// /// /// /// /// /// ////// cacaca cacaca cacaca cacaca cacaca cacaca cacacacacaca iZ iiY iX iZ iiY iX ZYXZYX δδ δδ δδ δδ δδ δδ −− − − − − (3) The spin-orbit parameters for different semiconductors (Si, Ge, GaAs and InP) are taken from Chadi et al [9]....

    [...]

  • ...THEORETICAL MODELING Band structures of bulk semiconductors and nanotubes are calculated by using the sp3s*-model [8] including the effect of spin orbit coupling [9]....

    [...]

Journal ArticleDOI
TL;DR: The synthesis of structurally uniform and morphologically versatile Ge nanostructures may open up new opportunities for integrated Ge-nanostructure-based nanocircuits, nanodevices, and nanosystems.
Abstract: We report on the controlled growth of germanium (Ge) nanostructures in the form of both nanowire (NW) and nanotube (NT) with ultrahigh aspect ratios and variable diameters The nanostructures are grown inside a porous anodic aluminum oxide (AAO) template by low-temperature chemical vapor deposition (CVD) assisted by an electrodeposited metal nanorod catalyst Depending on the choice of catalytic metals (Au, Ni, Cu, Co) and germane (GeH4) concentration during CVD, either Ge NWs or NTs can be synthesized at low growth temperatures (310−370 °C) Furthermore, Ge NWs and NTs with two or more branches can be grown from the same stem while using AAO with branched channels as templates Transmission electron microscopy studies show that NWs are single crystalline and that branches grow epitaxially from the stem of NWs with a crystalline direction independent of diameter As-grown NTs are amorphous but can crystallize via postannealing at 400 °C in Ar/H2 atmosphere, with a wall thickness controllable between 6 and

47 citations


"Energy band-structure estimation of..." refers background in this paper

  • ...Reports are available on the fabrication of single-walled and multi-walled nanotubes by employing vapor-liquid-solid (VLS) [1], chemical vapor deposition (CVD) [3], thermal chemical process [4] and surface stress imbalance technique [2]....

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