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Journal ArticleDOI

Engineering Carbon Nanotubes and Nanotube Circuits Using Electrical Breakdown

27 Apr 2001-Science (American Association for the Advancement of Science)-Vol. 292, Iss: 5517, pp 706-709
TL;DR: A simple and reliable method for selectively removing single carbon shells from MWNTs and SWNT ropes to tailor the properties of these composite nanotubes and to directly address the issue of multiple-shell transport.
Abstract: Carbon nanotubes display either metallic or semiconducting properties. Both large, multiwalled nanotubes (MWNTs), with many concentric carbon shells, and bundles or “ropes” of aligned single-walled nanotubes (SWNTs), are complex composite conductors that incorporate many weakly coupled nanotubes that each have a different electronic structure. Here we demonstrate a simple and reliable method for selectively removing single carbon shells from MWNTs and SWNT ropes to tailor the properties of these composite nanotubes. We can remove shells of MWNTs stepwise and individually characterize the different shells. By choosing among the shells, we can convert a MWNT into either a metallic or a semiconducting conductor, as well as directly address the issue of multiple-shell transport. With SWNT ropes, similar selectivity allows us to generate entire arrays of nanoscale field-effect transistors based solely on the fraction of semiconducting SWNTs.
Citations
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Journal ArticleDOI
02 Aug 2002-Science
TL;DR: Many potential applications have been proposed for carbon nanotubes, including conductive and high-strength composites; energy storage and energy conversion devices; sensors; field emission displays and radiation sources; hydrogen storage media; and nanometer-sized semiconductor devices, probes, and interconnects.
Abstract: Many potential applications have been proposed for carbon nanotubes, including conductive and high-strength composites; energy storage and energy conversion devices; sensors; field emission displays and radiation sources; hydrogen storage media; and nanometer-sized semiconductor devices, probes, and interconnects. Some of these applications are now realized in products. Others are demonstrated in early to advanced devices, and one, hydrogen storage, is clouded by controversy. Nanotube cost, polydispersity in nanotube type, and limitations in processing and assembly methods are important barriers for some applications of single-walled nanotubes.

9,693 citations

Journal ArticleDOI
17 Aug 2001-Science
TL;DR: The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.
Abstract: Boron-doped silicon nanowires (SiNWs) were used to create highly sensitive, real-time electrically based sensors for biological and chemical species. Amine- and oxide-functionalized SiNWs exhibit pH-dependent conductance that was linear over a large dynamic range and could be understood in terms of the change in surface charge during protonation and deprotonation. Biotin-modified SiNWs were used to detect streptavidin down to at least a picomolar concentration range. In addition, antigen-functionalized SiNWs show reversible antibody binding and concentration-dependent detection in real time. Lastly, detection of the reversible binding of the metabolic indicator Ca2+ was demonstrated. The small size and capability of these semiconductor nanowires for sensitive, label-free, real-time detection of a wide range of chemical and biological species could be exploited in array-based screening and in vivo diagnostics.

5,841 citations

Journal ArticleDOI
TL;DR: In this article, the authors present new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of organic thin-film transistors (OTFTs) and discuss progress in the growing field of n-type OTFTs.
Abstract: Organic thin-film transistors (OTFTs) have lived to see great improvements in recent years. This review presents new insight into conduction mechanisms and performance characteristics, as well as opportunities for modeling properties of OTFTs. The shifted focus in research from novel chemical structures to fabrication technologies that optimize morphology and structural order is underscored by chapters on vacuum-deposited and solution-processed organic semiconducting films. Finally, progress in the growing field of the n-type OTFTs is discussed in ample detail. The Figure, showing a pentacene film edge on SiO2, illustrates the morphology issue.

4,804 citations

Journal ArticleDOI
TL;DR: In this paper, a review of various nanostructures of ZnO grown by the solid-vapour phase technique and their corresponding growth mechanisms is presented. And the application of nanobelts as nanosensors, nanocantilevers, field effect transistors and nanoresonators is demonstrated.
Abstract: Zinc oxide is a unique material that exhibits semiconducting and piezoelectric dual properties. Using a solid–vapour phase thermal sublimation technique, nanocombs, nanorings, nanohelixes/nanosprings, nanobelts, nanowires and nanocages of ZnO have been synthesized under specific growth conditions. These unique nanostructures unambiguously demonstrate that ZnO probably has the richest family of nanostructures among all materials, both in structures and in properties. The nanostructures could have novel applications in optoelectronics, sensors, transducers and biomedical sciences. This article reviews the various nanostructures of ZnO grown by the solid–vapour phase technique and their corresponding growth mechanisms. The application of ZnO nanobelts as nanosensors, nanocantilevers, field effect transistors and nanoresonators is demonstrated.

3,361 citations

Journal ArticleDOI
09 Nov 2001-Science
TL;DR: This work demonstrates logic circuits with field-effect transistors based on single carbon nanotubes that exhibit a range of digital logic operations, such as an inverter, a logic NOR, a static random-access memory cell, and an ac ring oscillator.
Abstract: We demonstrate logic circuits with field-effect transistors based on single carbon nanotubes. Our device layout features local gates that provide excellent capacitive coupling between the gate and nanotube, enabling strong electrostatic doping of the nanotube from p-doping to n-doping and the study of the nonconventional long-range screening of charge along the one-dimensional nanotubes. The transistors show favorable device characteristics such as high gain (>10), a large on-off ratio (>10(5)), and room-temperature operation. Importantly, the local-gate layout allows for integration of multiple devices on a single chip. Indeed, we demonstrate one-, two-, and three-transistor circuits that exhibit a range of digital logic operations, such as an inverter, a logic NOR, a static random-access memory cell, and an ac ring oscillator.

2,642 citations

References
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Journal ArticleDOI
Sumio Iijima1
01 Nov 1991-Nature
TL;DR: Iijima et al. as mentioned in this paper reported the preparation of a new type of finite carbon structure consisting of needle-like tubes, which were produced using an arc-discharge evaporation method similar to that used for fullerene synthesis.
Abstract: THE synthesis of molecular carbon structures in the form of C60 and other fullerenes1 has stimulated intense interest in the structures accessible to graphitic carbon sheets. Here I report the preparation of a new type of finite carbon structure consisting of needle-like tubes. Produced using an arc-discharge evaporation method similar to that used for fullerene synthesis, the needles grow at the negative end of the electrode used for the arc discharge. Electron microscopy reveals that each needle comprises coaxial tubes of graphitic sheets, ranging in number from 2 up to about 50. On each tube the carbon-atom hexagons are arranged in a helical fashion about the needle axis. The helical pitch varies from needle to needle and from tube to tube within a single needle. It appears that this helical structure may aid the growth process. The formation of these needles, ranging from a few to a few tens of nanometres in diameter, suggests that engineering of carbon structures should be possible on scales considerably greater than those relevant to the fullerenes. On 7 November 1991, Sumio Iijima announced in Nature the preparation of nanometre-size, needle-like tubes of carbon — now familiar as 'nanotubes'. Used in microelectronic circuitry and microscopy, and as a tool to test quantum mechanics and model biological systems, nanotubes seem to have unlimited potential.

39,086 citations

Journal ArticleDOI
01 May 1998-Nature
TL;DR: In this paper, the fabrication of a three-terminal switching device at the level of a single molecule represents an important step towards molecular electronics and has attracted much interest, particularly because it could lead to new miniaturization strategies in the electronics and computer industry.
Abstract: The use of individual molecules as functional electronic devices was first proposed in the 1970s (ref 1) Since then, molecular electronics2,3 has attracted much interest, particularly because it could lead to conceptually new miniaturization strategies in the electronics and computer industry The realization of single-molecule devices has remained challenging, largely owing to difficulties in achieving electrical contact to individual molecules Recent advances in nanotechnology, however, have resulted in electrical measurements on single molecules4,5,6,7 Here we report the fabrication of a field-effect transistor—a three-terminal switching device—that consists of one semiconducting8,9,10 single-wall carbon nanotube11,12 connected to two metal electrodes By applying a voltage to a gate electrode, the nanotube can be switched from a conducting to an insulating state We have previously reported5 similar behaviour for a metallic single-wall carbon nanotube operated at extremely low temperatures The present device, in contrast, operates at room temperature, thereby meeting an important requirement for potential practical applications Electrical measurements on the nanotube transistor indicate that its operation characteristics can be qualitatively described by the semiclassical band-bending models currently used for traditional semiconductor devices The fabrication of the three-terminal switching device at the level of a single molecule represents an important step towards molecular electronics

5,258 citations

Journal ArticleDOI
TL;DR: In this article, the authors fabricated field effect transistors based on individual single and multi-wall carbon nanotubes and analyzed their performance, showing that structural deformations can make them operate as field-effect transistors.
Abstract: We fabricated field-effect transistors based on individual single- and multi-wall carbon nanotubes and analyzed their performance. Transport through the nanotubes is dominated by holes and, at room temperature, it appears to be diffusive rather than ballistic. By varying the gate voltage, we successfully modulated the conductance of a single-wall device by more than 5 orders of magnitude. Multi-wall nanotubes show typically no gate effect, but structural deformations—in our case a collapsed tube—can make them operate as field-effect transistors.

2,771 citations

Journal ArticleDOI
12 Jun 1998-Science
TL;DR: The conductance of multiwalled carbon nanotubes (MWNTs) was found to be quantized and Extremely high stable current densities, J > 10(7) amperes per square centimeter, have been attained.
Abstract: The conductance of multiwalled carbon nanotubes (MWNTs) was found to be quantized. The experimental method involved measuring the conductance of nanotubes by replacing the tip of a scanning probe microscope with a nanotube fiber, which could be lowered into a liquid metal to establish a gentle electrical contact with a nanotube at the tip of the fiber. The conductance of arc-produced MWNTs is one unit of the conductance quantum G0 5 2e 2 /h 5 (12.9 kilohms) ‐1 . The nanotubes conduct current ballistically and do not dissipate heat. The nanotubes, which are typically 15 nanometers wide and 4 micrometers long, are several orders of magnitude greater in size and stability than other typical room-temperature quantum conductors. Extremely high stable current densities, J . 10 7 amperes per square centimeter, have been attained.

1,992 citations

Journal ArticleDOI
TL;DR: It is estimated that the mean-field transition temperature from a Peierls-distorted regime to a high-temperature metallic regime should be well below room temperature.
Abstract: We have calculated the electronic structure of a fullerene tubule using a first-principles, self-consistent, all-electron Gaussian-orbital based local-density-functional approach. Extending these results to a model containing an electron-lattice interaction, we estimate that the mean-field transition temperature from a Peierls-distorted regime to a high-temperature metallic regime should be well below room temperature. Such fullerene tubules should have the advantages (compared to the other conjugated carbon systems) of a carrier density similar to that of metals and zero band gap at room temperature.

1,842 citations