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Journal ArticleDOI

Enhanced thermoelectric figure-of-merit in p-type nanostructured bismuth antimony tellurium alloys made from elemental chunks.

12 Jul 2008-Nano Letters (American Chemical Society)-Vol. 8, Iss: 8, pp 2580-2584
TL;DR: In this paper, the same ball milling and hot press technique was used to obtain a peak ZT of about 1.3 in the temperature range of 75 and 100 °C.
Abstract: By ball milling alloyed bulk crystalline ingots into nanopowders and hot pressing them, we had demonstrated high figure-of-merit in nanostructured bulk bismuth antimony telluride. In this study, we use the same ball milling and hot press technique, but start with elemental chunks of bismuth, antimony, and tellurium to avoid the ingot formation step. We show that a peak ZT of about 1.3 in the temperature range of 75 and 100 °C has been achieved. This process is more economical and environmentally friendly than starting from alloyed bulk crystalline ingots. The ZT improvement is caused mostly by the lower thermal conductivity, similar as the case using ingot. Transmission electron microscopy observations of the microstructures suggest that the lower thermal conductivity is mainly due to the increased phonon scattering from the increased grain boundaries of the nanograins, precipitates, nanodots, and defects. Our material also exhibits a ZT of 0.7 at 250 °C, similar to the value obtained when ingot was used. This study demonstrates that high ZT values can be achieved in nanostructured bulk materials with ball milling elemental chunks, suggesting that the approach can be applied to other materials that are hard to be made into ingot, in addition to its advantage of lower manufacturing cost.
Citations
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Journal ArticleDOI
TL;DR: In this paper, the authors introduce the principles and present status of bulk nanostructured materials, then describe some of the unanswered questions about carrier transport and how current research is addressing these questions.
Abstract: Thermoelectrics have long been recognized as a potentially transformative energy conversion technology due to their ability to convert heat directly into electricity. Despite this potential, thermoelectric devices are not in common use because of their low efficiency, and today they are only used in niche markets where reliability and simplicity are more important than performance. However, the ability to create nanostructured thermoelectric materials has led to remarkable progress in enhancing thermoelectric properties, making it plausible that thermoelectrics could start being used in new settings in the near future. Of the various types of nanostructured materials, bulk nanostructured materials have shown the most promise for commercial use because, unlike many other nanostructured materials, they can be fabricated in large quantities and in a form that is compatible with existing thermoelectric device configurations. The first generation of these materials is currently being developed for commercialization, but creating the second generation will require a fundamental understanding of carrier transport in these complex materials which is presently lacking. In this review we introduce the principles and present status of bulk nanostructured materials, then describe some of the unanswered questions about carrier transport and how current research is addressing these questions. Finally, we discuss several research directions which could lead to the next generation of bulk nanostructured materials.

1,742 citations

Journal ArticleDOI
TL;DR: A promising flat-panel solar thermal to electric power conversion technology based on the Seebeck effect and high thermal concentration is demonstrated, thus enabling wider applications and opening up a promising new approach which has the potential to achieve cost-effective conversion of solar energy into electricity.
Abstract: The conversion of sunlight into electricity has been dominated by photovoltaic and solar thermal power generation. A highly efficient solar to electric energy conversion device based on nanostructured thermoelectric materials and high solar concentration is now demonstrated. The results show potential for cost effective solar thermoelectric generation.

1,011 citations

Journal ArticleDOI
TL;DR: A dimensionless thermoelectric figure-of-merit (ZT) of 0.95 in p-type nanostructured bulk silicon germanium (SiGe) alloys is achieved, which is about 90% higher than what is currently used in space flight missions, and half higher than the reported record.
Abstract: A dimensionless thermoelectric figure-of-merit (ZT) of 0.95 in p-type nanostructured bulk silicon germanium (SiGe) alloys is achieved, which is about 90% higher than what is currently used in space flight missions, and 50% higher than the reported record in p-type SiGe alloys. These nanostructured bulk materials were made by using a direct current-induced hot press of mechanically alloyed nanopowders that were initially synthesized by ball milling of commercial grade Si and Ge chunks with boron powder. The enhancement of ZT is due to a large reduction of thermal conductivity caused by the increased phonon scattering at the grain boundaries of the nanostructures combined with an increased power factor at high temperatures.

999 citations

Journal ArticleDOI
TL;DR: In this paper, the synthesis process and the relationship between the microstructures and the thermoelectric properties of the nanostructured bulk materials with an enhanced ZT value are reviewed.
Abstract: Recently a significant figure-of-merit (ZT) improvement in the most-studied existing thermoelectric materials has been achieved by creating nanograins and nanostructures in the grains using the combination of high-energy ball milling and a direct-current-induced hot-press process. Thermoelectric transport measurements, coupled with microstructure studies and theoretical modeling, show that the ZT improvement is the result of low lattice thermal conductivity due to the increased phonon scattering by grain boundaries and structural defects. In this article, the synthesis process and the relationship between the microstructures and the thermoelectric properties of the nanostructured thermoelectric bulk materials with an enhanced ZT value are reviewed. It is expected that the nanostructured materials described here will be useful for a variety of applications such as waste heat recovery, solar energy conversion, and environmentally friendly refrigeration.

802 citations

Journal ArticleDOI
TL;DR: In this paper, a peak ZT of about 1.3 at 900°C in an n-type nanostructured SiGe bulk alloy has been achieved by using a nanostructure approach, mainly due to a reduction in the thermal conductivity caused by the enhanced phonon scattering off the increased density of nanograin boundaries.
Abstract: The dimensionless thermoelectric figure of merit (ZT) of the n-type silicon germanium (SiGe) bulk alloy at high temperature has remained at about one for a few decades. Here we report that by using a nanostructure approach, a peak ZT of about 1.3 at 900 °C in an n-type nanostructured SiGe bulk alloy has been achieved. The enhancement of ZT comes mainly from a significant reduction in the thermal conductivity caused by the enhanced phonon scattering off the increased density of nanograin boundaries. The enhanced ZT will make such materials attractive in many applications such as solar, thermal, and waste heat conversion into electricity.

686 citations

References
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Journal ArticleDOI
11 Oct 2001-Nature
TL;DR: Th thin-film thermoelectric materials are reported that demonstrate a significant enhancement in ZT at 300 K, compared to state-of-the-art bulk Bi2Te3 alloys, and the combination of performance, power density and speed achieved in these materials will lead to diverse technological applications.
Abstract: Thermoelectric materials are of interest for applications as heat pumps and power generators. The performance of thermoelectric devices is quantified by a figure of merit, ZT, where Z is a measure of a material's thermoelectric properties and T is the absolute temperature. A material with a figure of merit of around unity was first reported over four decades ago, but since then-despite investigation of various approaches-there has been only modest progress in finding materials with enhanced ZT values at room temperature. Here we report thin-film thermoelectric materials that demonstrate a significant enhancement in ZT at 300 K, compared to state-of-the-art bulk Bi2Te3 alloys. This amounts to a maximum observed factor of approximately 2.4 for our p-type Bi2Te3/Sb2Te3 superlattice devices. The enhancement is achieved by controlling the transport of phonons and electrons in the superlattices. Preliminary devices exhibit significant cooling (32 K at around room temperature) and the potential to pump a heat flux of up to 700 W cm-2; the localized cooling and heating occurs some 23,000 times faster than in bulk devices. We anticipate that the combination of performance, power density and speed achieved in these materials will lead to diverse technological applications: for example, in thermochemistry-on-a-chip, DNA microarrays, fibre-optic switches and microelectrothermal systems.

4,921 citations

Journal ArticleDOI
02 May 2008-Science
TL;DR: Electrical transport measurements, coupled with microstructure studies and modeling, show that the ZT improvement is the result of low thermal conductivity caused by the increased phonon scattering by grain boundaries and defects, which makes these materials useful for cooling and power generation.
Abstract: The dimensionless thermoelectric figure of merit (ZT) in bismuth antimony telluride (BiSbTe) bulk alloys has remained around 1 for more than 50 years. We show that a peak ZT of 1.4 at 100°C can be achieved in a p-type nanocrystalline BiSbTe bulk alloy. These nanocrystalline bulk materials were made by hot pressing nanopowders that were ball-milled from crystalline ingots under inert conditions. Electrical transport measurements, coupled with microstructure studies and modeling, show that the ZT improvement is the result of low thermal conductivity caused by the increased phonon scattering by grain boundaries and defects. More importantly, ZT is about 1.2 at room temperature and 0.8 at 250°C, which makes these materials useful for cooling and power generation. Cooling devices that use these materials have produced high-temperature differences of 86°, 106°, and 119°C with hot-side temperatures set at 50°, 100°, and 150°C, respectively. This discovery sets the stage for use of a new nanocomposite approach in developing high-performance low-cost bulk thermoelectric materials.

4,695 citations

Journal ArticleDOI
TL;DR: In this article, the ability to achieve a simultaneous increase in the power factor and a decrease in the thermal conductivity of the same nanocomposite sample and for transport in the same direction is discussed.
Abstract: Many of the recent advances in enhancing the thermoelectric figure of merit are linked to nanoscale phenomena found both in bulk samples containing nanoscale constituents and in nanoscale samples themselves. Prior theoretical and experimental proof-of-principle studies on quantum-well superlattice and quantum-wire samples have now evolved into studies on bulk samples containing nanostructured constituents prepared by chemical or physical approaches. In this Review, nanostructural composites are shown to exhibit nanostructures and properties that show promise for thermoelectric applications, thus bringing together low-dimensional and bulk materials for thermoelectric applications. Particular emphasis is given in this Review to the ability to achieve 1) a simultaneous increase in the power factor and a decrease in the thermal conductivity in the same nanocomposite sample and for transport in the same direction and 2) lower values of the thermal conductivity in these nanocomposites as compared to alloy samples of the same chemical composition. The outlook for future research directions for nanocomposite thermoelectric materials is also discussed.

3,562 citations

Journal ArticleDOI
TL;DR: In this article, the authors proposed to use quantum-well superlattice structures to enhance the performance of thermoelectric coolers and showed that layering has the potential to increase significantly the figure of merit of a highly anisotropic material.
Abstract: Currently the materials with the highest thermoelectric figure of merit Z are ${\mathrm{Bi}}_{2}$${\mathrm{Te}}_{3}$ alloys. Therefore these compounds are the best thermoelectric refrigeration elements. However, since the 1960s only slow progress has been made in enhancing Z, either in ${\mathrm{Bi}}_{2}$${\mathrm{Te}}_{3}$ alloys or in other thermoelectric materials. So far, the materials used in applications have all been in bulk form. In this paper, it is proposed that it may be possible to increase Z of certain materials by preparing them in quantum-well superlattice structures. Calculations have been done to investigate the potential for such an approach, and also to evaluate the effect of anisotropy on the figure of merit. The calculations show that layering has the potential to increase significantly the figure of merit of a highly anisotropic material such as ${\mathrm{Bi}}_{2}$${\mathrm{Te}}_{3}$, provided that the superlattice multilayers are made in a particular orientation. This result opens the possibility of using quantum-well superlattice structures to enhance the performance of thermoelectric coolers.

3,202 citations

Journal ArticleDOI
30 Jul 1999-Science
TL;DR: Improved materials would not only help to cool advanced electronics but could also provide energy benefits in refrigeration and when using waste heat to generate electrical power.
Abstract: In a typical thermoelectric device, a junction is formed from two different conducting materials, one containing positive charge carriers (holes) and the other negative charge carriers (electrons). When an electric current is passed in the appropriate direction through the junction, both types of charge carriers move away from the junction and convey heat away, thus cooling the junction. Similarly, a heat source at the junction causes carriers to flow away from the junction, making an electrical generator. Such devices have the advantage of containing no moving parts, but low efficiencies have limited their use to specialty applications, such as cooling laser diodes. The principles of thermoelectric devices are reviewed and strategies for increasing the efficiency of novel materials are explored. Improved materials would not only help to cool advanced electronics but could also provide energy benefits in refrigeration and when using waste heat to generate electrical power.

2,808 citations