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Journal ArticleDOI

Enhancement of thermoelectric power of PbTe:Ag nanocomposite thin films

11 Mar 2015-RSC Advances (The Royal Society of Chemistry)-Vol. 5, Iss: 33, pp 25887-25895
TL;DR: In this article, the enhancement of thermoelectric power of PbTe:Ag nanocomposite thin films, synthesized by the thermal evaporation technique, was investigated.
Abstract: The present study focuses on the enhancement of thermoelectric power of PbTe:Ag nanocomposite thin films, synthesized by the thermal evaporation technique. Thermoelectric measurements were carried out from room temperature to 400 K. It is observed that Ag addition improves the thermoelectric power and crystalline nature of the PbTe thin films. Synchrotron based X-ray diffraction was performed to confirm the phases of the Pb–Ag–Te alloy. This was further reconfirmed by X-ray photoelectron spectroscopy (XPS) and showed the precipitation of Pb on the surface of the PbTe:Ag films. The enhancement of thermoelectric power is thus attributed to the formation of Ag2−xTe alloy and the precipitation of Pb nanostructures on the surface. The origin of such enhancement is understood based on the phenomenon of energy dependent filtering of charge carriers.
Citations
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Journal Article
TL;DR: In this paper, a theory for the enhancement of the thermoelectric properties of semiconductor materials with metallic nanoinclusions is presented, which is based on the concept of band bending at metal/semiconductor interfaces as an energy filter for electrons.
Abstract: Based on the concept of band bending at metal/semiconductor interfaces as an energy filter for electrons, we present a theory for the enhancement of the thermoelectric properties of semiconductor materials with metallic nanoinclusions. We show that the Seebeck coefficient can be significantly increased due to a strongly energy-dependent electronic scattering time. By including phonon scattering, we find that the enhancement of $ZT$ due to electron scattering is important for high doping, while at low doping it is primarily due to a decrease in the phonon thermal conductivity.

485 citations

Journal ArticleDOI
TL;DR: In this paper, a thermoelectric generator with shape conformable geometry for sustaining low-thermal impedance and large temperature gradient ( Δ T ) is developed for wearable and multi-scale energy harvesting applications.

68 citations

Journal ArticleDOI
TL;DR: In this paper, the influence of different substrates on the morphological, compositional, phase purity, structural and transport properties of vanadium pentaoxide (V2O5) thin films was investigated.
Abstract: The present work focuses on the influence of different substrates on the morphological, compositional, phase purity, structural and transport properties of vanadium pentaoxide (V2O5) thin films. Thin films of V2O5 were fabricated on different substrates: glass, quartz, Si, and alumina (hereafter these films are referred to as V2O5:G, V2O5:Q, V2O5:Si and V2O5:A, respectively) using inorganic sol–gel with V2O5 powder and hydrogen peroxide (H2O2) as precursors by spin coating. Films deposited on glass substrates were found to be amorphous in nature with smooth surfaces, whereas films deposited on quartz, silicon, and alumina substrates exhibited a polycrystalline nature, having an orthorhombic structure with space group Pmmn. The crystallinity improves from quartz to silicon and the best crystalline films were fabricated on alumina. Electrical measurements as a function of temperature and substrate are investigated and characterized by measuring the resistivity, Hall and Seebeck coefficients. Negative values of Hall and Seebeck coefficients reveal that all the films are of n-type semiconductors. Electrical resistivity as well as charge carrier density decreases from the films on glass to quartz to silicon and to alumina. Carrier mobility decreases in the following order V2O5:G > V2O5:A > V2O5:Si > V2O5:Q, whereas the Seebeck coefficient varies in the reverse order. Variation of these transport parameters has been understood on the basis of scattering and trapping of charge carriers along the grain boundaries. Furthermore, a model based on thermodynamics is proposed to explain the effect of substrates on the crystallinity of thin films. Interactions between sol and substrate (adhesive forces) determine the thickness, phase purity, structural and morphological properties of thin films. As the magnitude of adhesive forces increases, both film thickness and crystallinity increase.

44 citations

Journal ArticleDOI
TL;DR: A density functional theory approach employing generalized gradient approximation (GGA) and the modified Becke Johnson (TB-mBJ) potential has been used to study the electronic and thermoelectric (TE) properties of ZrxHf1−x−yTayNiSn as discussed by the authors.
Abstract: A density functional theory (DFT) approach employing generalized gradient approximation (GGA) and the modified Becke Johnson (TB-mBJ) potential has been used to study the electronic and thermoelectric (TE) properties of ZrxHf1−x−yTayNiSn. The presence of an indirect band gap at EF in the parent compound predicts this material to be a small band gap insulator. The substitution of Ta atoms at the Hf site increases the density of states (DOS) at EF which facilitates charge carrier mobility. The influence of Ta content increases the Seebeck coefficient and electrical conductivity, and suppresses the thermal conductivity; as a result the figure of merit ZT is enhanced. We report an increment in ZT value of 36% over the undoped system. The theoretical data were compared with the experimental results.

43 citations

Journal ArticleDOI
TL;DR: This study suggests that ion beam can be used as an effective technique to selectively alter the electrical transport properties of oxide thermoelectric materials.
Abstract: The SrTiO3 thin films were fabricated by pulsed laser deposition. Subsequently ion implantation with 60 keV N ions at two different fluences 1 × 1016 and 5 × 1016 ions/cm2 and followed by annealing was carried out. Thin films were then characterized for electronic structure, morphology and transport properties. X-ray absorption spectroscopy reveals the local distortion of TiO6 octahedra and introduction of oxygen vacancies due to N implantation. The electrical and thermoelectric properties of these films were measured as a function of temperature to understand the conduction and scattering mechanisms. It is observed that the electrical conductivity and Seebeck coefficient (S) of these films are significantly enhanced for higher N ion fluence. The temperature dependent electrical resistivity has been analysed in the temperature range of 80–400 K, using various conduction mechanisms and fitted with band conduction, near neighbour hopping (NNH) and variable range hopping (VRH) models. It is revealed that the band conduction mechanism dominates at high temperature regime and in low temperature regime, there is a crossover between NNH and VRH. The S has been analysed using the relaxation time approximation model and dispersive transport mechanism in the temperature range of 300–400 K. Due to improvement in electrical conductivity and thermopower, the power factor is enhanced to 15 µWm−1 K−2 at 400 K at the higher ion fluence which is in the order of ten times higher as compared to the pristine films. This study suggests that ion beam can be used as an effective technique to selectively alter the electrical transport properties of oxide thermoelectric materials.

32 citations

References
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Journal ArticleDOI
TL;DR: A new era of complex thermoelectric materials is approaching because of modern synthesis and characterization techniques, particularly for nanoscale materials, and the strategies used to improve the thermopower and reduce the thermal conductivity are reviewed.
Abstract: Thermoelectric materials, which can generate electricity from waste heat or be used as solid-state Peltier coolers, could play an important role in a global sustainable energy solution. Such a development is contingent on identifying materials with higher thermoelectric efficiency than available at present, which is a challenge owing to the conflicting combination of material traits that are required. Nevertheless, because of modern synthesis and characterization techniques, particularly for nanoscale materials, a new era of complex thermoelectric materials is approaching. We review recent advances in the field, highlighting the strategies used to improve the thermopower and reduce the thermal conductivity.

8,999 citations

BookDOI
14 Jul 1995
TL;DR: In this article, Rowe et al. proposed a method for reducing the thermal conductivity of a thermoelectric generator by reducing the carrier concentration of the generator, which was shown to improve the generator's performance.
Abstract: Introduction, D.M. Rowe General Principles and Theoretical Considerations Thermoelectric Phenomena, D.D. Pollock Coversion Efficiency and Figure-of-Merit, H.J. Goldsmid Thermoelectric Transport Theory, C.M. Bhandari Optimization of Carrier Concentration, C.M. Bhandari and D.M. Rowe Minimizing the Thermal Conductivity, C.M. Bhandari Selective Carrier Scattering in Thermoelectric Materials, Y.I. Ravich Thermomagnetic Phenomena, H.J. Goldsmid Material Preparation Preparation of Thermoelectric Materials from Melts, A. Borshchevsky Powder Metallurgy Techniques, A.N. Scoville PIES Method of Preparing Bismuth Alloys, T. Ohta and T. Kajikawa Preparation of Thermoelectric Materials by Mechanical Alloying, B.A. Cook, J.L. Harringa, and S.H. Han Preparation of Thermoelectric Films, K. Matsubara, T. Koyanagi, K. Nagao, and K. Kishimoto Measurement of Thermoelectric Properties Calculation of Peltier Device Performance, R.J. Buist Measurements of Electrical Properties, I.A. Nishida Measurement of Thermal Properties, R. Taylor Z-Meters, H.H. Woodbury, L.M. Levinson, and S. Lewandowski Methodology for Testing Thermoelectric Materials and Devices, R.J. Buist Thermoelectric Materials Bismuth Telluride, Antimony Telluride, and Their Solid Solutions, H. Scherrer and S. Scherrer Valence Band Structure and the Thermoelectric Figure-of-Merit of (Bi1-xSbx)Te3 Crystals, M. Stordeur Lead Telluride and Its Alloys, V. Fano Properties of the General Tags System, E.A. Skrabek and D.S. Trimmer Thermoelectric Properties of Silicides, C.B. Vining Polycrystalline Iron Disilicide as a Thermoelectric Generator Material, U. Birkholz, E. Gross, and U. Stohrer Thermoelectric Properties of Anisotropic MnSi1.75 , V.K. Zaitsev Low Carrier Mobility Materials for Thermoelectric Applications, V.K. Zaitsev, S.A. Ktitorov, and M.I. Federov Semimetals as Materials for Thermoelectric Generators, M.I. Fedorov and V.K. Zaitsev Silicon Germanium, C.B. Vining Rare Earth Compounds, B.J. Beaudry and K.A. Gschneidner, Jr. Thermoelectric Properties of High-Temperature Superconductors, M. Cassart and J.-P. Issi Boron Carbides, T.L. Aselage and D. Emin Thermoelectric Properties of Metallic Materials, A.T. Burkov and M.V. Vedernikov Neutron Irradiation Damage in SiGe Alloys, J.W. Vandersande New Materials and Performance Limits for Thermoelectric Cooling, G.A. Slack Thermoelectric Generation Miniature Semiconductor Thermoelectric Devices, D.M. Rowe Commercially Available Generators, A.G. McNaughton Modular RTG Technology, R.F. Hartman Peltier Devices as Generators, G. Min and D.M. Rowe Calculations of Generator Performance, M.H. Cobble Generator Applications Terrestrial Applications of Thermoelectric Generators, W.C. Hall Space Applications, G.L. Bennett SP-100 Space Subsystems, J.F. Mondt Safety Aspects of Thermoelectrics in Space, G.L. Bennett Low-Temperature Heat Conversion, K. Matsuura and D.M. Rowe Thermoelectric Refrigeration Introduction, H.J. Goldsmid Module Design and Fabrication, R. Marlow and E. Burke Cooling Thermoelements with Superconducting Leg, M.V. Vedernikov and V.L. Kuznetsov Applications of Thermoelectric Cooling Introduction, H.J. Goldsmid Commercial Peltier Modules, K.-I. Uemura Thermoelectrically Cooled Radiation Detectors, L.I. Anatychuk Reliability of Peltier Coolers in Fiber-Optic Laser Packages, R.M. Redstall and R. Studd Laboratory Equipment, K.-I. Uemura Large-Scale Cooling: Integrated Thermoelectric Element Technology, J.G. Stockholm Medium-Scale Cooling: Thermoelectric Module Technology, J.G. Stockholm Modeling of Thermoelectric Cooling Systems, J.G. Stockholm

4,192 citations

Journal ArticleDOI
25 Jul 2008-Science
TL;DR: A successful implementation through the use of the thallium impurity levels in lead telluride (PbTe) is reported, which results in a doubling of zT in p-type PbTe to above 1.5 at 773 kelvin.
Abstract: The efficiency of thermoelectric energy converters is limited by the material thermoelectric figure of merit (zT). The recent advances in zT based on nanostructures limiting the phonon heat conduction is nearing a fundamental limit: The thermal conductivity cannot be reduced below the amorphous limit. We explored enhancing the Seebeck coefficient through a distortion of the electronic density of states and report a successful implementation through the use of the thallium impurity levels in lead telluride (PbTe). Such band structure engineering results in a doubling of zT in p-type PbTe to above 1.5 at 773 kelvin. Use of this new physical principle in conjunction with nanostructuring to lower the thermal conductivity could further enhance zT and enable more widespread use of thermoelectric systems.

3,401 citations

Journal ArticleDOI
05 May 2011-Nature
TL;DR: It is demonstrated that it is possible to direct the convergence of many valleys in a bulk material by tuning the doping and composition, leading to an extraordinary zT value of 1.8 at about 850 kelvin.
Abstract: Thermoelectric generators, which directly convert heat into electricity, have long been relegated to use in space-based or other niche applications, but are now being actively considered for a variety of practical waste heat recovery systems—such as the conversion of car exhaust heat into electricity. Although these devices can be very reliable and compact, the thermoelectric materials themselves are relatively inefficient: to facilitate widespread application, it will be desirable to identify or develop materials that have an intensive thermoelectric materials figure of merit, zT, above 1.5 (ref. 1). Many different concepts have been used in the search for new materials with high thermoelectric efficiency, such as the use of nanostructuring to reduce phonon thermal conductivity, which has led to the investigation of a variety of complex material systems. In this vein, it is well known, that a high valley degeneracy (typically ≤6 for known thermoelectrics) in the electronic bands is conducive to high zT, and this in turn has stimulated attempts to engineer such degeneracy by adopting low-dimensional nanostructures. Here we demonstrate that it is possible to direct the convergence of many valleys in a bulk material by tuning the doping and composition. By this route, we achieve a convergence of at least 12 valleys in doped PbTe_(1) − _(x)Se_(x) alloys, leading to an extraordinary zT value of 1.8 at about 850 kelvin. Band engineering to converge the valence (or conduction) bands to achieve high valley degeneracy should be a general strategy in the search for and improvement of bulk thermoelectric materials, because it simultaneously leads to a high Seebeck coefficient and high electrical conductivity.

2,964 citations

Journal ArticleDOI
TL;DR: An overview of thermoelectric (TE) phenomena and materials is provided in this issue of MRS Bulletin this article, where several of the current applications and key parameters are defined and discussed.
Abstract: High-efficiency thermoelectric (TE) materials are important for power-generation devices that are designed to convert waste heat into electrical energy.They can also be used in solid-state refrigeration devices.The conversion of waste heat into electrical energy may play an important role in our current challenge to develop alternative energy technologies to reduce our dependence on fossil fuels and reduce greenhouse gas emissions. An overview of various TE phenomena and materials is provided in this issue of MRS Bulletin. Several of the current applications and key parameters are defined and discussed.Novel applications of TE materials include biothermal batteries to power heart pacemakers, enhanced performance of optoelectronics coupled with solid-state TE cooling, and power generation for deep-space probes via radioisotope TE generators.A number of different systems of potential TE materials are currently under investigation by various research groups around the world, and many of these materials are reviewed in the articles in this issue.These range from thin-film superlattice materials to large single-crystal or polycrystalline bulk materials, and from semiconductors and semimetals to ceramic oxides.The phonon-glass/electron-crystal approach to new TE materials is presented, along with the role of solid-state crystal chemistry.Research criteria for developing new materials are highlighted.

1,359 citations