Enhancing lifetime and security of PCM-based main memory with start-gap wear leveling
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Cites background from "Enhancing lifetime and security of ..."
...The reported endurance of ReRAM is up to 10(12) [21], [22], making the lifetime issue of ReRAM-based memory less concerned than PCM based main memory whose endurance has been assumed between 10(6)-10(8) [23]....
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Cites background from "Enhancing lifetime and security of ..."
...More details on the technology could be found in [1, 35, 36, 37, 38, 39, 40, 41, 42]....
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References
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"Enhancing lifetime and security of ..." refers background in this paper
...For example, partial writes [8], li ne evel writeback [15], lazy write [15] and silent store removal [21 ]....
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1,451 citations
"Enhancing lifetime and security of ..." refers background in this paper
...[15] propose Fine-Grain Wear Leveling (FGWL) to shift cache lines within a page to achieve uniform wear out of all lines in the page....
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...For a system with write traffic of B GBps, an ideal PCM-based memory system of size S GB and a cell endurance of Wmax will last for a duration as given by the following equation [15]:...
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...A recent study [15] has proposed such a PCM-based hybrid memory system....
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...For example, partial writes [8], line level writeback [15], lazy write [15] and silent store removal [21]....
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1,387 citations
Additional excerpts
...Keywords: Phase Change Memory, Wear Leveling, Endurance....
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1,320 citations
"Enhancing lifetime and security of ..." refers background in this paper
...BACKGROUND AND MOTIVATION Phase Change Memory (PCM) [20][19] has emerged as a promising candidate to build scalable memory systems [16][5]....
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