Epitaxial crystallization of amorphous SiO2 films deposited on single-crystalline α-quartz
TL;DR: In this article, the solid phase epitaxial growth of thin amorphous SiO2 films deposited by electron gun evaporation on single-crystalline α-quartz substrates was reported.
Abstract: The epitaxial α-quartz thin film could be a promising material for fabricating optical devices because of its unique optical and mechanical properties and processing advantages compared to bulk materials This letter reports on the solid-phase epitaxial growth of thin amorphous SiO2 films deposited by electron gun evaporation on single-crystalline α-quartz substrates This was achieved by high-dose Cs+-ion implantation and subsequent thermal annealing in air Also, a thin amorphous layer produced by Si+-ion implantation on α-quartz was epitaxially regrown, thus indicating that the epitaxy is independent of the preparation history of the amorphous layer The results are explained on the basis of network modifications induced by alkali and oxygen in the SiO2 structure
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TL;DR: In this article, a spincoating was conducted on single-crystal silicon substrates using a xylene solution of perhydropolysilazane (PHPS) to obtain 0.14-μm-thick PHPS films.
Abstract: Spin-coating was conducted on single-crystal silicon substrates using a xylene solution of perhydropolysilazane (PHPS) to obtain 0.14-μm-thick PHPS films. The PHPS films obtained were suspended over various acidic and basic solutions at room temperature so that they were exposed to the vapors from the solutions. PHPS-to-silica film conversion was studied by infrared absorption spectroscopy, and the stability of the exposed films in hot water was examined by soaking the films in 80 °C water. The as-deposited PHPS films were found to be dissolved in water. When the PHPS films were suspended over water, the films were partially converted into silica, but the resultant film had low stability in hot water. Higher degrees of PHPS-to-silica conversion and higher stabilities in hot water were found on exposing the PHPS films to basic or acidic vapors. Exposure to highly basic vapors from aqueous solutions of ammonia and ethylamine was significantly effective in PHPS-to-silica film conversion, which provided silica thin films with high stability in hot water.
41 citations
TL;DR: In this paper, a single-crystal SiO2 film on a Ni(111) surface was grown with a (√ 3×√3) R30° crystallographic orientation, and its structure was the high-temperature phase of quartz.
Abstract: We grew a single-crystal SiO2 film on a Ni(111) surface. Atomic hydrogen during initial growth of an amorphous SiO2 film and an ambient oxygen atmosphere during annealing of this film were essential in forming this single-crystal SiO2 film. The film grew with a (√3×√3) R30° crystallographic orientation, and its structure was the high-temperature phase of quartz, i.e., β quartz. In addition, a polycrystalline silicide phase was formed at the SiO2/Ni(111) interface.
36 citations
34 citations
TL;DR: In this paper, the epitaxial recrystallization of amorphized layers was achieved after alkali irradiation and annealing in air in the temperature range 650-875°C.
Abstract: In this article, our results on the epitaxial crystallization of ion-bombarded crystalline silicon dioxide (α quartz) are reviewed. The epitaxial recrystallization of amorphized layers was achieved after alkali irradiation and annealing in air in the temperature range 650–875 °C. The systematic behavior of alkali ions in enhancing the regrowth rate both with decreasing ion size and increasing concentration is shown. The role of oxygen in the recrystallization was investigated by means of nuclear reaction analysis, by performing thermal treatments of the samples in 18O. A large amount of 18O diffuses inside the amorphous layer in the alkali-ion implanted samples at 600–800 °C. From the strong correlation between the migration of 18O and implanted alkali, it was possible to gain further insights into the recrystallization mechanism.
20 citations
TL;DR: In this article, the migration of oxygen in ion-beam-amorphized c-SiO2 (α-quartz) was investigated by means of nuclear reaction analysis using the resonant reaction 18O(p,α)15N for oxygen depth profiling.
Abstract: The migration of oxygen in ion-beam-amorphized c-SiO2 (α-quartz) was investigated by means of nuclear reaction analysis using the resonant reaction 18O(p,α)15N for oxygen depth profiling. Only very small amounts of oxygen were observed to diffuse in crystalline or in Xe+-ion beam-amorphized α-quartz after high-temperature annealing. However, a dramatic migration of oxygen occurs in Cs+-implanted α-quartz in the same temperature range (600–900 °C), where Cs diffuses out of the amorphized layer and epitaxial recrystallization occurs. These results point out to a strong correlation of all these processes. A mechanism to explain the observed indiffusion of 18O is proposed and is related to the Cs migration and the topological modification to achieve epitaxial regrowth of the SiO2 matrix.
19 citations
References
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2,353 citations
Book•
01 Jan 1987
TL;DR: In this article, Biersack et al. presented a table of ion ranges and energy deposition in insulators, and the role of defect creation in the Aqueous Dissolution of Ion-Bombarded Inorganic Insulators.
Abstract: 1. Ion Ranges and Energy Deposition in Insulators (J.P. Biersack). 2. The Sputtering of Insulators (R. Kelly). 3. Characterization Techniques for Ion Bombarded Insulators (J.A. Borders). 4. Defect Creation in Ion Bombarded Inorganic Insulators (A. Perez, P. Thevenard). 5. Ion Beam Modification of Glasses (G.W. Arnold, P. Mazzoldi). 6. The Mechanical and Tribological Properties of Ion Implanted Ceramics (C.J. McHargue). 7. Synthesis of Dielectric Layers in Silicon by Ion Implantation (I.H. Wilson). 8. Ion Beam Effects in Organic Molecular Solids and Polymers (T. Venkatesan, L. Calcagno, B.S. Elman, G. Foti). 9. Condensed Gases (W.L. Brown). 10. Optoelectronic Materials (G. Gotz). 11. Ferromagnetic Garnets (P. Gerard). 12. Nuclear Waste Materials (Hj. Matzke). 13. Role of Defects on the Aqueous Dissolution of Ion-Bombarded Insulators (G. Della Mea, J.-C. Dran, J.-C. Petit). 14. Chemical Effects of Ion Bombardment (G.K. Wolf, K. Roessler). 15. Ion Beam Effects on Thin Film Adhesion (J.E.E. Baglin). 16. Astrophysical Implications of Ions Incident on Insulators (L.J. Lanzerotti, R.E. Johnson). Subject Index. Appendix: Tables of Ion Ranges in Insulators.
415 citations
01 May 1985-Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
TL;DR: In this paper, the gamma ray yield function of (p, αγ) and resonance reactions on semi-thick 19F, 23Na, 24,26Mg and 27Al targets were measured and used to calibrate the accelerating voltage and energy resolution of the new 500 kV heavy ion implanter at Gottingen.
Abstract: Gamma ray yield functions of (p, αγ) and (p, γ) resonance reactions on semi-thick 19F, 23Na, 24,26Mg and 27Al targets were measured and used to calibrate the accelerating voltage and energy resolution of the new 500 kV heavy ion implanter at Gottingen. The energy spread of the proton beam was found to vary linearly with the accelerating voltage from ΔE(200 keV) = 55 eV fwhm to ΔE(500 keV) = 105 eV; it is made up by a 0.012% high voltage ripple and the Doppler broadening of the resonances due to the thermal motion of the target nuclei. A long term stability of the proton energy of Applications of the accelerator for the remeasurement of some resonance energies and widths and for depth profiling of light implanted ions in metals by the resonance broadening method will be briefly discussed.
293 citations
Book•
01 Jan 1992
TL;DR: Ion exchange from salt melts silver-film ion exchange technique theoretical analysis of ion-exchanged glass waveguides optical waveguide characterization techniques waveguide and devices as discussed by the authors.
Abstract: Ion exchange from salt melts silver-film ion exchange technique theoretical analysis of ion-exchanged glass waveguides optical waveguide characterization techniques waveguides and devices.
290 citations
Book•
01 Jan 1999
TL;DR: The Structure of Materials: Overview. as discussed by the authors The structure of materials: Non-crystalline state. Crystalline State. Liquid-Crystalline states. Microstructure.
Abstract: The Structure of Materials: Overview. Noncrystalline State. Crystalline State. Liquid-Crystalline State. Imperfections in Ordered Media. Microstructure. Index.
101 citations