Journal ArticleDOI
Epitaxial crystallization of keV-ion-bombarded α quartz
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TLDR
In this paper, the epitaxial recrystallization of amorphized layers was achieved after alkali irradiation and annealing in air in the temperature range 650-875°C.Abstract:
In this article, our results on the epitaxial crystallization of ion-bombarded crystalline silicon dioxide (α quartz) are reviewed. The epitaxial recrystallization of amorphized layers was achieved after alkali irradiation and annealing in air in the temperature range 650–875 °C. The systematic behavior of alkali ions in enhancing the regrowth rate both with decreasing ion size and increasing concentration is shown. The role of oxygen in the recrystallization was investigated by means of nuclear reaction analysis, by performing thermal treatments of the samples in 18O. A large amount of 18O diffuses inside the amorphous layer in the alkali-ion implanted samples at 600–800 °C. From the strong correlation between the migration of 18O and implanted alkali, it was possible to gain further insights into the recrystallization mechanism.read more
Citations
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Journal ArticleDOI
Stable violet cathodoluminescence of α-quartz after Ge+ implantation at elevated temperature
TL;DR: In this paper, a single-crystalline α-quartz with 120 keV Ge+ion implantation under the conditions of dynamic solid phase epitaxial regrowth has been studied as function of ion fluence and substrate temperature.
Journal ArticleDOI
Luminescence of ion-irradiated α-quartz
Klaus-Peter Lieb,Juhani Keinonen +1 more
TL;DR: In this article, a survey of cathode-luminescence spectroscopy performed after ion implantation in α-quartz is presented, in connection with dynamic, laser-induced and chemical epitaxy of the surface layers amorphized during the ion irradiation.
Journal ArticleDOI
Laser-induced epitaxial recrystallization after alkali-ion implantion into α-quartz
TL;DR: In this paper, the authors investigated how laser irradiation can be used to epitaxially recrystallize layers of α-quartz, which were amorphized by 175 and 250 keV Rb + or 250 kV Cs + ion implantation at a fluence of 2.5 × 10 16 ǫ −2.
Journal ArticleDOI
Cathodoluminescence and solid phase epitaxy in Ba -irradiated α -quartz
TL;DR: In this paper, the dynamic solid phase epitaxy of α-quartz during Ba+-ion implantation at 300-1170k and its relationship to cathodoluminescence emission are investigated.
Journal ArticleDOI
Cathodoluminescence of α-quartz after hot Ge ion irradiation
TL;DR: In this article, the authors present results on the cathodoluminescence (CL) after 120 keV Ge implantation in α-quartz at 1173 K with fluences between 1.5 and 1.1 eV.
References
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Book
CRC Handbook of Chemistry and Physics
TL;DR: CRC handbook of chemistry and physics, CRC Handbook of Chemistry and Physics, CRC handbook as discussed by the authors, CRC Handbook for Chemistry and Physiology, CRC Handbook for Physics,
Journal ArticleDOI
Kinetics of solid phase crystallization in amorphous silicon
G.L. Olson,J.A. Roth +1 more
TL;DR: In this paper, the authors examined the crystallization behavior of a-Si over the temperature range from 500 °C to ∼ 1380°C and showed that the random crystallization process is a well-behaved function of temperature over that temperature range with an activation energy of 4 eV.
Book
Ion beam modification of insulators
Paolo Mazzoldi,George W. Arnold +1 more
TL;DR: In this article, Biersack et al. presented a table of ion ranges and energy deposition in insulators, and the role of defect creation in the Aqueous Dissolution of Ion-Bombarded Inorganic Insulators.