Journal ArticleDOI
Epitaxial GaAs Kinetic Studies: {001} Orientation
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TLDR
In this paper, a recording microbalance was adapted to the deposition apparatus so that the epitaxial growth rates could be continuously measured during the actual deposition process, which may indicate the presence of a competitive adsorption process.Abstract:
Gallium arsenide deposition rate studies were conducted with an open tube, chloride transport system which permitted independent control of the reactant input partial pressures. A recording microbalance was adapted to the deposition apparatus so that the epitaxial growth rates could be continuously measured during the actual deposition process. At low temperatures and high reactant partial pressures the process appears to be kinetically controlled. The rate then becomes inversely proportional to the gallium monochloride partial pressure and may indicate the presence of a competitive adsorption process. At high temperatures and low partial pressures the rates may be described in terms of a "quasi‐equilibrium" model where a fraction of the incoming gas stream equilibrates with the condensed phase.read more
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Kinetic aspects in the vapour phase epitaxy of iii–v compounds
TL;DR: In this article, a review of the progress in measurement and interpretation of the kinetics of vapour phase deposition of III-V epitaxial layers is presented, with a focus on near-atmospheric pressure, open flow, and chemical transport.
Journal ArticleDOI
Selective growth of GaAs by HVPE: Keys for accurate control of the growth morphologies
TL;DR: In this article, GaAs selective growth experiments were carried out on (0,0,1) GaAs-patterned substrates by HVPE mesas grown on [1,1,0] and [1 1 0] oriented stripes exhibited various morphological profiles bounded by the low growth rate faces.
Journal ArticleDOI
Mass spectrometric and thermodynamics studies of the CVD of some III–V compounds
TL;DR: In this article, a time-of-flight mass spectrometer has been coupled to a CVD reactor to elucidate the chemistry of CVD processes occuring in the synthesis of several III-V compounds.
Journal ArticleDOI
In situ measurements and growth kinetics of silicon carbide chemical vapor deposition from methyltrichlorosilane
TL;DR: In this paper, the growth kinetics of silicon carbide (SiC) by chemical vapor deposition (CVD) from methyltrichlorosilane (MTS): CH 3 SiCl 3 ) was investigated by in situ measurements of growth rates, which were converted from the deposited weight by thermogravimetry, as a function of temperature and partial pressure of MTS (P MTS ).
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