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Journal ArticleDOI

Erratum: Fluorescence line narrowing, localized exciton states, and spectral diffusion in the mixed semiconductor CdS x Se 1-x

E. Cohen1, M. D. Sturge1
15 Mar 1982-Physical Review B (American Physical Society)-Vol. 25, Iss: 6, pp 3828-3840
About: This article is published in Physical Review B.The article was published on 1982-03-15. It has received 257 citations till now. The article focuses on the topics: Exciton & Diffusion (business).
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Journal ArticleDOI
TL;DR: In this paper, a time-resolved photoluminescence spectroscopy of highly porous silicon was performed and it was shown that the luminescence is due to localized quantum-confined excitons in undulating crystalline silicon wires.
Abstract: The authors report time-resolved photoluminescence spectroscopy of highly porous silicon. Their results show that the luminescence is due to localized quantum-confined excitons in undulating crystalline silicon wires. The resonantly excited photoluminescence spectrum exhibits satellite structure due to momentum-conserving phonons of crystalline silicon. This provides a clear signature of the crystalline-silicon electronic band structure. The spin states of the localized exciton are split by the electron-hole exchange interaction. This splitting is manifested both in the strong dependence of the luminescence lifetime on temperature, and as an energy gap in the resonantly excited photoluminescence spectrum. The experimental splitting is in good agreement with the value calculated for a localized exciton in crystalline silicon.

305 citations

Journal ArticleDOI
TL;DR: In this paper, the electron-phonon interaction energy has a great influence on the optical properties of the III nitride semiconductors, such as phonon replicas in the emission spectra, homogeneous broadening of the excitonic line width and the relaxation of hot carriers to the fundamental band edge.
Abstract: The electronic band structures of III nitride semiconductors calculated within the adiabatic approximation give essential information about the optical properties of materials. However, atoms of the lattice are not at rest; their displacement away from the equilibrium positions perturbs the periodic potential acting on the electrons in the crystal, leading to an electron-phonon interaction energy. Due to different ways that the lattice vibration perturbs the motions of electrons, there are various types of interaction, such as Frohlich interaction with longitudinal optical phonons, deformation-potential interactions with optical and acoustic phonons and piezoelectric interaction with acoustic phonons. These interactions, especially the Frohlich interaction, which is very strong due to the ionic nature of III nitrides, have a great influence on the optical properties of the III nitride semiconductors. As a result of electron-phonon interaction, several phenomena, such as phonon replicas in the emission spectra, homogeneous broadening of the excitonic line width and the relaxation of hot carriers to the fundamental band edge, which have been observed in GaN and its low dimensional heterostructures, are reviewed.

172 citations

Journal ArticleDOI
TL;DR: In this article, the authors investigated the effect of excitons localized by alloy potential fluctuations in CdS1-xSex on the time resolved luminescence spectra.
Abstract: Picosecond time resolved luminescence is investigated of excitons localized by alloy potential fluctuations in CdS1–xSex. Time resolved luminescence spectra, as well as time decay curves and time integrated luminescence spectra of a CdS0.36Se0.64 sample are fitted using a model in which transfer to lower energy states occurs through the tunnel effect assisted by acoustic phonons. The density of states is taken to be exponential with a characteristic energy, E0, equal to 2.2 meV. The radiative lifetime is 1.5 ns. The nonradiative lifetime due to transfer is inversely proportional to the number of available states at lower energy. Close agreement with the experimental results can also be found with a phenomenological model. Nous etudions la luminescence resolue en temps due aux excitons localises par les fluctuations de potential d'alliage dans CdS1–xSex. Les spectres de luminescence resolue en temps, les courbes de decroissance temporelle ainsi que les spectres de luminescence integree en temps d'un echantillon de composition CdS0,36Se0,64 sont ajustes en utilisant le modele de transfert par effet tunnel assiste par phonon acoustique. La densite d'etats decroit exponentiellement avec une energie caracteristique E0 = 2,2 meV. Le temps de vie radiatif est egal a 1,5 ns. Le temps de vie non-radiatif dǔ au transfert est inversement proportionnel au nombre d'etats disponsibles a plus basse energie. Un modele phenomenologique donne egalement un bon accord avec les resultats experimentaux.

166 citations

Journal ArticleDOI
TL;DR: In this paper, a detailed spectroscopic study of highly porous silicon was carried out, and the observation of momentum-conserving phonon satellites in resonantly excited photoluminescence (PL) spectra enabled the luminescent material in porous silicon to be unambiguously identified as crystalline silicon.

149 citations

Journal ArticleDOI
TL;DR: In this paper, the effect of solution disorder on the density of states and dynamical properties of electronic excitations near the band edges in II-VI semiconductor solid solutions is discussed.

133 citations