scispace - formally typeset
Journal ArticleDOI

Estimation of Stress in Polycrystalline CuInSe2 Films Deposited on Mo‐Coated Glass Substrates

Reads0
Chats0
TLDR
In this paper, the authors measured the optical reflectance spectra of polycrystalline thin films of CuInSe 2 deposited on soda-lime glass and Mo-coated glass substrates by utilizing the broadening of the optical absorption band tail.
Abstract
Stress and strain in polycrystalline thin films of CuInSe 2 deposited on soda-lime glass and Mo-coated glass substrates were determined from the optical reflectance spectra by utilizing the broadening of the optical absorption band tail. The contributions of both intrinsic (due to grain boundary and lattice vibrations) and extrinsic stresses (due to thermal mismatch of film and substrate) were considered. It was observed that the films deposited on Mo-coated glass substrates had lower grain size and higher stress (3 x 10 7 Pa) compared to those of the bare glass substrates (1.1 x 10 7 Pa). This process of estimation of mechanical properties of thin films from optical measurements on both absorbing (Mo/glass) and non-absorbing (glass) substrates appears to be very attractive due to its non-destructive nature. The defect state density (Q t ) at the grain boundary region along with the internal built-in average electric field (F av ) were determined with the variation of the Cu/In ratio in the films, deposited on glass and Mo-coated glass substrates. It was observed that both Q t and F av were higher for Cu/In < 1.0 and decreased as the stoichiometric composition was approached.

read more

Citations
More filters
Journal ArticleDOI

Texture manipulation of CuInSe2 thin films

TL;DR: In this article, a growth method that allows tailoring of preferred orientation in CuInSe2 thin-films grown on Mo-coated soda-lime glass substrates is presented, and films exhibiting a (204) preferred orientation are demonstrated, in addition to already reported (112) and randomly oriented films.
Journal ArticleDOI

Characterization of Cu(In,Ga)Se2 films by Raman scattering

TL;DR: In this article, the Raman spectra of 1− x Ga x Se 2 (0 x ≤ 0.29) thin films were measured at room temperature and low (∼10 K) temperature to examine the active modes in the films for different x values.
Journal ArticleDOI

Investigation of the growth process and properties of CuIn5S8 and AgIn5S8 spinel thin films

TL;DR: In this article, the preparation of CuIn5S8 and AgIn 5S8 spinel thin films by sulphurization of Cu-In and Ag-In alloy films in sulphur vapour was investigated.
DissertationDOI

Growth mechanisms of CuInS2 formed by the sulfurization of thin metallic films

TL;DR: In this paper, the growth of thin CuInS2 lms from a rapid thermal sulfurization process is investigated by means of an experimental method to monitor in real-time the microstructural changes of a thinlm during solid solid or solid gas reactions.
References
More filters
Journal ArticleDOI

Absorption edge and internal electric fields in amorphous semiconductors

TL;DR: In this paper, a simple model based on the existence of internal electric fields is suggested to explain the exponential part of the absorption edge observed in many amorphous semiconductors.
Journal ArticleDOI

The intrinsic stress of polycrystalline and epitaxial thin metal films

TL;DR: In this article, a thorough discussion of today's understanding of the growth of thin metal films and related atomistic mechanisms responsible for intrinsic stress is presented, where the intrinsic stress either originates from strained regions within the films (grain boundaries, dislocations, voids, impurities, etc.) or at the film/substrate (lattice mismatch, different thermal expansion, etc).
Journal ArticleDOI

Measurements of the intrinsic stress in thin metal films

R. Abermann
- 01 Jan 1990 - 
TL;DR: In this paper, the authors measured the stress of thin metal films in situ under normal conditions with a bending beam apparatus and showed that the different types of stress curves can be correlated with different growth modes (e.g. columnar grain growth or island growth) caused by differences in the material mobility.
Journal ArticleDOI

Thoughts on the microstructure of polycrystalline thin film CuInSe2 and its impact on material and device performance

TL;DR: The microstructure and morphology of polycrystalline thin film CuInSe2 were studied extensively in the compositional range 17-32 at.% Cu as mentioned in this paper, and it was shown that the intergranular micro-structure is dominated by compositional and substrate temperature dependence of Cu2−δSe precipitation at grain boundaries and free surfaces.
Journal ArticleDOI

Structure, chemistry, and growth mechanisms of photovoltaic quality thin‐film Cu(In,Ga)Se2 grown from a mixed‐phase precursor

TL;DR: In this paper, the formation chemistry and growth dynamics of thin-film CuInSe2 grown by physical vapor deposition have been considered along the reaction path leading from the CuxSe:CuxSe2 two-phase region to single-phase CuInSE2.
Related Papers (5)