Evaluating STT-RAM as an energy-efficient main memory alternative
Citations
270Â citations
Cites background or methods or result from "Evaluating STT-RAM as an energy-eff..."
...Second, some emerging resistive memory technologies, such as phase change memory (PCM) [66, 73, 38, 39, 65] or spintransfer torque magnetic memory (STT-MRAM) [14, 36] appear more scalable, have latency and bandwidth characteristics much closer to DRAM than flash memory and hard disks, and are non-volatile with little idle power consumption....
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...One can achieve more efficient designs of PCM (or STT-MRAM) chips by taking advantage of the non-destructive nature of reads, which enables simpler and narrower row buffer organizations [49] Unlike in DRAM, the entire memory row does not need to be buffered in a device where reading a memory row does not destroy the data stored in the row....
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...These include PCM and STT-MRAM....
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...We have also reached a similar conclusion upon evaluation of the complete replacement of DRAM with STTMRAM [36]: reorganization of peripheral circuitry of STT-MRAM chips (with the goal of minimizing the number of writes to the STTMRAM cell array, as write operations are high-latency and highenergy in STT-MRAM) enables an STT-MRAM based main memory to be much more energy-efficient than a DRAM-based main memory....
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...These emerging technologies usually provide a tradeoff, and seem unlikely to completely replace DRAM (evaluated in [38, 39, 40] for PCM and in [36] for STT-MRAM), as they are not strictly superior to DRAM....
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251Â citations
188Â citations
Cites background or methods or result from "Evaluating STT-RAM as an energy-eff..."
...We have also reached a similar conclusion upon evaluation of the complete replacement of DRAM with STTMRAM [100]: reorganization of peripheral circuitry of STT-MRAM chips (with the goal of minimizing the number of writes to the STT-MRAM cell array, as write operations are highlatency and high-energy in STT-MRAM) enables an STT-MRAM based main memory to be more energy-efficient than a DRAM-based main memory....
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...Second, some emerging resistive memory technologies, such as phase change memory (PCM) [102, 103, 159, 163, 192], spin-transfer torque magnetic memory (STT-MRAM) [31, 100] or resistive RAM (RRAM) [193] appear more scalable, have latency and bandwidth characteristics much closer to DRAM than flash memory and hard disks, and are non-volatile with little idle power consumption....
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...These emerging technologies usually provide a tradeoff, and seem unlikely to completely replace DRAM (evaluated in [102–104] for PCM and in [100] for STT-MRAM), as they are not strictly superior to DRAM....
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179Â citations
Cites background from "Evaluating STT-RAM as an energy-eff..."
...Phase change memory (PCM) [30, 36], spin-transfer torque RAM (STTRAM) [2, 29] and ReRAM [1] are representative examples of NVM. Notably, Intel and Micron recently announced 3D XPoint, a commercial NVM product on the way to the market [24]....
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...Phase change memory (PCM) [30, 36], spin-transfer torque RAM (STTRAM) [2, 29] and ReRAM [1] are representative examples of NVM....
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172Â citations
Cites methods from "Evaluating STT-RAM as an energy-eff..."
...Byte-addressable nonvolatile memory (NVM) technologies, such as STT-RAM [33, 36], PCM [64, 39], and ReRAM [2], promise persistent memory [77, 57, 4, 29], which is emerging as a new tier in the memory and storage stack....
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References
4,019Â citations
Additional excerpts
...This orientation determines the electrical resistance of the device which is used to read the data stored in the cell....
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2,848Â citations
"Evaluating STT-RAM as an energy-eff..." refers background in this paper
...In STT-RAM, it is the resistance of the MTJ that changes based on the stored data....
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1,938Â citations
"Evaluating STT-RAM as an energy-eff..." refers background in this paper
...Several studies [2], [7], [11], [13], [22], [24], [32] have shown that main memory now accounts for as much as 30% of overall system power and is a large contributor to operational cost....
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1,864Â citations
"Evaluating STT-RAM as an energy-eff..." refers methods in this paper
...The MTJ in an STT-RAM cell is designed such that, even under the highest operating temperature conditions, it takes at least 10 years for thermal disturbances to upset the polarization stored in the junction [1]....
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1,568Â citations
"Evaluating STT-RAM as an energy-eff..." refers background or result in this paper
...Of these, PCRAM promises substantial density benefits (at least 2-4X over DRAM today), and it has been studied extensively to replace or augment DRAM in building a higher capacity and more scalable main memory system [5], [30], [49], [52], [66], [64]....
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...However, it is both much slower (about 2-4X read, 10-100X write) and much more power hungry (about 2-4X read, 10-50X write), compared to DRAM [30], [50], [55], [61]....
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