Journal ArticleDOI
Experiments on Ge-GaAs heterojunctions
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TLDR
In this article, the electrical characteristics of Ge-GaAs heterojunctions, made by depositing Ge epitaxially on GaAs substrates, are described and I-V and electro-optical characteristics are consistent with a model in which the conduction-and valence-band edges at the interface are discontinuous.Abstract:
The electrical characteristics of Ge-GaAs heterojunctions, made by depositing Ge epitaxially on GaAs substrates, are described. I–V and electro-optical characteristics are consistent with a model in which the conduction- and valence-band edges at the interface are discontinuous. The forbidden band in heavily doped (n-type) germanium appears to shift to lower energy values.read more
Citations
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GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
TL;DR: In this article, a review of the properties of the Al x Ga1−x As/GaAs heterostructure system is presented, which can be classified into sixteen groups: (1) lattice constant and crystal density, (2) melting point, (3) thermal expansion coefficient, (4), lattice dynamic properties, (5) lattices thermal properties,(6) electronic-band structure, (7) external perturbation effects on the bandgap energy, (8) effective mass, (9) deformation potential, (10) static and
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Band offsets of wide-band-gap oxides and implications for future electronic devices
TL;DR: In this paper, the Schottky barrier heights and band offsets for high dielectric constant oxides on Pt and Si were calculated and good agreement with experiment is found for barrier heights.
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Recent advances in Schottky barrier concepts
TL;DR: Theoretical models of Schottky-barrier height formation are reviewed in this paper, with a particular emphasis on the examination of how these models agree with general physical principles, and new concepts on the relationship between interface dipole and chemical bond formation are analyzed, and shown to offer a coherent explanation of a wide range of experimental data.
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The physics and chemistry of the Schottky barrier height
TL;DR: The formation of the Schottky barrier height (SBH) is a complex problem because of the dependence of the SBH on the atomic structure of the metal-semiconductor (MS) interface as mentioned in this paper.
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Theory of semiconductor heterojunctions: The role of quantum dipoles
TL;DR: In this paper, a simple criterion for zero-dipole band lineups is proposed, which gives excellent agreement with experimental band lineup, and the close connection between heterojunction band line up and Schottky barrier formation is emphasized.
References
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Journal ArticleDOI
Infrared Absorption and Electron Effective Mass in n-Type Gallium Arsenide
W. G. Spitzer,J. M. Whelan +1 more
TL;DR: In this paper, the infrared reflectivity measurements on several samples of different carrier concentrations were used to deduce the free-carrier contribution to the electric susceptibility and the electron effective mass.
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Germanium-gallium arsenide heterojunctions
TL;DR: Some tentative results obtained in a study of the electrical characteristics ofrupt monocrystalline junctions between two different semiconductor materials are summarized.
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Epitaxial vapor growth of Ge single crystals in a closed-cycle process
TL;DR: Either n-type or p-type Ge can be deposited, and by using two sources within the same tube alternating layers can be obtained, and chemical purity is comparable to the best meltgrown Ge.
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Vapor‐Deposited Single‐Crystal Germanium
TL;DR: Germanium layers have been formed on single-crystal Ge substrates by the thermal decomposition of GeI2 as mentioned in this paper, and the singlecrystal nature of the layers has been established by x-ray and electron diffraction examination and by electrical measurements.