Extremely high-density capacitors with ald high-k dielectric layers
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Cites background or methods from "Extremely high-density capacitors w..."
...layer uniformity, pulse/purge ratios have been adapted [11], and precursor types, preferably without H2O, have been optimized....
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...adaptation of the ALD process is required [11]....
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Cites background from "Extremely high-density capacitors w..."
...Last efforts have to be done on capacitor integration: large values of capacitors can’t be integrated today (best results are in the range of a few tens nanofarad under 15 V from the literature and they require either a large surface or a deep trench shape [20], [21]), but there are two solutions: the capacitor can be integrated with an hybrid method and be mounted on main self powered switch, or integrated in main silicon substrate....
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References
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