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Proceedings ArticleDOI

Fabricatiofn and characterization or iridium silicide/silicon Schottky barrier

20 May 1990-Vol. 1, pp 677-680
TL;DR: In this article, an IrSi/Si Schottky barrier can be formed by electron beam evaporation and annealing of Ir films on the basis of electron beam diffusion.
Abstract: It is demonstrated that an IrSi/Si Schottky barrier can be formed by electron beam evaporation and annealing of Ir films on
References
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Proceedings Article
01 Jan 1969

16,580 citations

Journal ArticleDOI
TL;DR: In this paper, various properties and the formation techniques of transition metal silicides have been reviewed and relations between the various properties of the metal or silicide electronic or crystallographic structure have been made to predict the more useful silicides for SIC applications.
Abstract: Transition metal silicides have, in the past, attracted attention because of their usefulness as high temperature materials and in integrated circuits as Schottky barrier and ohmic contacts. More recently, with the increasing silicon integrated circuits (SIC) packing density, the line widths get narrower and the sheet resistance contribution to the RC delay increases. The possibility of using low resistivity silicides, which can be formed directly on the polysilicon, makes these silicides highly attractive. The usefulness of a silicide metallization scheme for integrated circuits depends, not only on the desired low resistivity, but also on the ease with which the silicide can be formed and patterned and on the stability of the silicides throughout device processing and during actual device usage. In this paper, various properties and the formation techniques of the silicides have been reviewed. Correlations between the various properties and the metal or silicide electronic or crystallographic structure have been made to predict the more useful silicides for SIC applications. Special reference to the silicide resistivity, stress, and oxidizability during the formation and subsequent processing has been given. Various formation and etching techniques are discussed.

617 citations

Journal ArticleDOI
Jerry Tersoff1
TL;DR: In this paper, the dimensionless pinning strength of diamond-structure semiconductors is given by the optical dielectric constant, corrected for spin-orbit splitting, and it is shown that the Schottky-barrier height can be predicted to 0.1 eV from measured indirect gaps and splittings.
Abstract: Various models of Schottky-barrier formation suggest Fermi-level pinning in midgap. Elemen- tary band-structure considerations indicate that, for diamond-structure semiconductors, the physically relevant gap is the indirect gap, corrected for spin-orbit splitting. Schottky-barrier heights for elemental and III-V compound semiconductors can be predicted to 0.1 eV from measured indirect gaps and splittings. The dimensionless pinning strength S\ifmmode\bar\else\textasciimacron\fi{} is given by the optical dielectric constant. Chemical trends are thus simply explained.

299 citations

Journal ArticleDOI
TL;DR: In this article, chemical bonding and structure of metal/semiconductor interfaces are discussed. But they do not consider the relationship between metal and semiconductor interfaces and do not address the problem of interconnectivity.
Abstract: (1975). Chemical bonding and structure of metal/semiconductor interfaces. C R C Critical Reviews in Solid State Sciences: Vol. 5, No. 3, pp. 405-408.

217 citations

Journal ArticleDOI
TL;DR: The precise mechanisms governing the formation of Schottky barriers at metal-semiconductor interfaces are not well understood, despite a great many studies over a long period of time.
Abstract: The precise mechanisms governing the formation of Schottky barriers at metal-semiconductor interfaces are not well understood, despite a great many studies over a long period of time. During the last few years modern experimental and theoretical techniques have been applied to study these mechanisms and a great deal of progress has been made. Some of these approaches and advances are considered in this article.

48 citations