Fabrication and analysis of deep submicron strained-Si n-MOSFET's
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...551 Wavelength bmJ (3) If it is possible to create a more or less planar grating surface on the top of the rib of a SOI rib waveguide variable thermal tuning could be accomplished with the use of a control feedback heater to give a variable frequency Fabry-Perot effect....
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Cites background from "Fabrication and analysis of deep su..."
...The mechanical stress-induced effects on metal-oxide semiconductor field-effect transistors (MOSFETs) have been intensively studied to determine an approach to increase the speed of these devices [1-10]....
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Cites background from "Fabrication and analysis of deep su..."
...The deposition of Si onto relaxed SiGe layers, which possess a larger lattice parameter, induces an isotropic, biaxial tensile strain, which improves electron mobility in NFET devices Rim et al., 2000 ....
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