Journal ArticleDOI
Fabrication and Analysis of Epitaxially Grown Ge $_{1-x}$ Sn $_x$ Microdisk Resonator With 20-nm Free-Spectral Range
Seongjae Cho,R. Chen,Sukmo Koo,Gary Shambat,Hai Lin,Namkyoo Park,Jelena Vuckovic,Theodore I. Kamins,Byung-Gook Park,James S. Harris +9 more
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In this article, a whispering gallery mode (WGM) microdisk resonator based on Ge1-xSnx grown by molecular beam epitaxy (MBE) was fabricated and characterized.Abstract:
In this work, a whispering gallery mode (WGM) microdisk resonator based on Ge1-xSnx grown by molecular beam epitaxy (MBE) was fabricated and characterized. Various process conditions and different Sn contents (4% and 1%) were explored to confirm the feasibility of Ge1-xSnx for microcavity device operation. Optical modes with wavelengths in the infrared (IR) range beyond 1550 nm were successfully confined in the devices fabricated with different diameters, and free-spectral ranges (FSRs) near 20 nm were obtained.read more
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Si–Ge–Sn alloys: From growth to applications
Stephan Wirths,Dan Buca,S. Mantl +2 more
TL;DR: In this paper, the transition from an indirect to a fundamental direct bandgap material will be discussed, and the most commonly used approaches, i.e., molecular beam epitaxy (MBE) and chemical vapor deposition (CVD), will be reviewed in terms of crucial process parameters, structural as well as optical quality and employed precursor combinations including Germanium hydrides, Silicon hydride and a variety of Sn compounds like SnD4, SnCl4 or C6H5SnD3.
Journal ArticleDOI
Group IV direct band gap photonics: Methods, Challenges and Opportunities
R. Geiger,T. Zabel,Hans Sigg +2 more
TL;DR: The concept of direct band gap group IV materials offers a paradigm change for Si-photonics concerning the monolithic implementation of light emitters: the idea is to integrate fully compatible group IV material with equally favorable optical properties as the chemically incompatible group III-V-based systems.
Journal ArticleDOI
Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge(Sn) materials for micro- and nanophotonics.
Robert Chen,Suyog Gupta,Yi-Chiau Huang,Yijie Huo,Charles W. Rudy,Errol Antonio C. Sanchez,Yihwan Kim,Theodore I. Kamins,Krishna C. Saraswat,James S. Harris +9 more
TL;DR: A pseudomorphic Ge/Ge0.92Sn0.08/Ge quantum-well microdisk resonator on Ge/Si (001) as a route toward a compact GeSn-based laser on silicon is theoretically studied and experimentally demonstrated.
Journal ArticleDOI
Germanium based photonic components toward a full silicon/germanium photonic platform
Vincent Reboud,Alban Gassenq,J.M. Hartmann,Julie Widiez,Léopold Virot,J. Aubin,Kevin Guilloy,Samuel Tardif,Jean-Marc Fedeli,Nicolas Pauc,Alexei Chelnokov,Vincent Calvo +11 more
TL;DR: In this paper, the authors show that optical germanium-on-insulator (GeOI) substrates fabricated by the Smart Cut™ technology is a key feature for future Si-complementary metal oxide Semiconductor (CMOS) compatible laser demonstration.
Journal ArticleDOI
Room-temperature electroluminescence from germanium in an Al 0.3 Ga 0.7 As/Ge heterojunction light-emitting diode by Γ-valley transport
Seongjae Cho,Byung-Gook Park,Changjae Yang,Stanley Cheung,Euijoon Yoon,Theodore I. Kamins,S. J. Ben Yoo,James S. Harris +7 more
TL;DR: Electroluminescence peaks were observed near 1550 nm and the energy around this wavelength corresponds to that emitted from direct recombination at the Γ-valley of germanium.
References
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Journal ArticleDOI
High- Q surface-plasmon-polariton whispering-gallery microcavity
Bumki Min,Bumki Min,Bumki Min,Eric Ostby,Volker J. Sorger,Erick Ulin-Avila,Lan Yang,Lan Yang,Xiang Zhang,Xiang Zhang,Kerry J. Vahala +10 more
TL;DR: A high-Q SPP whispering-gallery microcavity that is made by coating the surface of a high- Q silica microresonator with a thin layer of a noble metal is demonstrated and Q factors of 1,376 ± 65 can be achieved in the near infrared for surface-plasmonic whispering- gallery modes at room temperature.
Journal ArticleDOI
Whispering Gallery Mode Carousel--a photonic mechanism for enhanced nanoparticle detection in biosensing.
TL;DR: This Carousel trap, caused by attractive optical gradient forces, interfacial interactions, and the circulating momentum flux, considerably enhances the rate of transport to the sensing region, thereby overcoming limitations posed by diffusion on such small area detectors.
Journal ArticleDOI
Study of whispering gallery modes in anisotropic single-crystal dielectric resonators
TL;DR: In this article, the Rayleigh-Ritz method and the finite element method nongenerating spurious solutions are employed for analysis of whispering gallery modes (WGMs) in cylindrical single-crystal anisotropic dielectric resonators.
Journal ArticleDOI
Determination of the optical energy gap of Ge1−xSnx alloys with 0<x<0.14
TL;DR: In this article, the optical energy gap of Ge1−xSnx alloys has been determined from transmittance measurements, using a fast-Fourier-transform infrared interferometer, showing that the change from indirect to direct band gap occurs at a lower critical Sn concentration than the value predicted from the virtual crystal approximation, tight binding, and pseudopotential models.
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Mobility Behavior of Ge1-xSnxLayers Grown on Silicon-on-Insulator Substrates
TL;DR: In this paper, the authors investigated the behaviors of the carrier mobility and concentration of the undoped Ge1-xSnx layers epitaxially grown on silicon-on-insulator (SOI) substrates.