Journal ArticleDOI
Fabrication and Analysis of Epitaxially Grown Ge $_{1-x}$ Sn $_x$ Microdisk Resonator With 20-nm Free-Spectral Range
Seongjae Cho,R. Chen,Sukmo Koo,Gary Shambat,Hai Lin,Namkyoo Park,Jelena Vuckovic,Theodore I. Kamins,Byung-Gook Park,James S. Harris +9 more
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In this article, a whispering gallery mode (WGM) microdisk resonator based on Ge1-xSnx grown by molecular beam epitaxy (MBE) was fabricated and characterized.Abstract:
In this work, a whispering gallery mode (WGM) microdisk resonator based on Ge1-xSnx grown by molecular beam epitaxy (MBE) was fabricated and characterized. Various process conditions and different Sn contents (4% and 1%) were explored to confirm the feasibility of Ge1-xSnx for microcavity device operation. Optical modes with wavelengths in the infrared (IR) range beyond 1550 nm were successfully confined in the devices fabricated with different diameters, and free-spectral ranges (FSRs) near 20 nm were obtained.read more
Citations
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Contact-geometry engineering in a circular light-emitting diode (LED) for improved electrical and optical performances
Yun Soo Park,Hwan Gi Lee,Chung-Mo Yang,Dong-Seok Kim,Jin-Hyuk Bae,Seongjae Cho,Jung-Hee Lee,In Man Kang +7 more
TL;DR: In this article, a circular mesa structure was used for GaN light-emitting diodes (LEDs) and their electrical and optical characterizations were performed, and the uniform current flow in the circular LED (C-LED) was conducted in the radial direction, from the n-type GaN island electrode at the center to the p type GaN ring electrode around the perimeter.
GeSn Devices for Short-Wave Infrared Optoelectronics
TL;DR: In this paper, a simple one-mask fabrication method was developed to create Ge1-xSnx microdisk resonators on Si, which could serve as a platform for the first on-Si CMOS laser.
Journal ArticleDOI
Process Considerations for 80-GHz High-Performance p-i-n Silicon Photodetector for Optical Interconnect
TL;DR: In this work, a high-speed low-operation power silicon photodetector based on p-i-n structure for optical interconnect has been designed by device simulation.
Journal ArticleDOI
Impact of strain engineering and Sn content on GeSn heterostructured nanomaterials for nanoelectronics and photonic devices
TL;DR: In this paper , the authors demonstrate a deep survey of the strain-controlling mechanisms in GeSn nanomaterials with different methodologies, using either layer configurations, Sn incorporation, or by external stressors, the emission of different photonic and nanoelectronic applications is controlled.
References
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Journal ArticleDOI
High- Q surface-plasmon-polariton whispering-gallery microcavity
Bumki Min,Bumki Min,Bumki Min,Eric Ostby,Volker J. Sorger,Erick Ulin-Avila,Lan Yang,Lan Yang,Xiang Zhang,Xiang Zhang,Kerry J. Vahala +10 more
TL;DR: A high-Q SPP whispering-gallery microcavity that is made by coating the surface of a high- Q silica microresonator with a thin layer of a noble metal is demonstrated and Q factors of 1,376 ± 65 can be achieved in the near infrared for surface-plasmonic whispering- gallery modes at room temperature.
Journal ArticleDOI
Whispering Gallery Mode Carousel--a photonic mechanism for enhanced nanoparticle detection in biosensing.
TL;DR: This Carousel trap, caused by attractive optical gradient forces, interfacial interactions, and the circulating momentum flux, considerably enhances the rate of transport to the sensing region, thereby overcoming limitations posed by diffusion on such small area detectors.
Journal ArticleDOI
Study of whispering gallery modes in anisotropic single-crystal dielectric resonators
TL;DR: In this article, the Rayleigh-Ritz method and the finite element method nongenerating spurious solutions are employed for analysis of whispering gallery modes (WGMs) in cylindrical single-crystal anisotropic dielectric resonators.
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Determination of the optical energy gap of Ge1−xSnx alloys with 0<x<0.14
TL;DR: In this article, the optical energy gap of Ge1−xSnx alloys has been determined from transmittance measurements, using a fast-Fourier-transform infrared interferometer, showing that the change from indirect to direct band gap occurs at a lower critical Sn concentration than the value predicted from the virtual crystal approximation, tight binding, and pseudopotential models.
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Mobility Behavior of Ge1-xSnxLayers Grown on Silicon-on-Insulator Substrates
TL;DR: In this paper, the authors investigated the behaviors of the carrier mobility and concentration of the undoped Ge1-xSnx layers epitaxially grown on silicon-on-insulator (SOI) substrates.