Journal ArticleDOI
Fabrication and characterization of narrow stripe InGaAsP/InP buried heterostructure lasers
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TLDR
InGaAsP/InP buried heterostructure lasers with a stripe width of 1-2 μm have been fabricated by two-step liquid phase epitaxy and preferential chemical etching as discussed by the authors.Abstract:
InGaAsP/InP buried‐heterostructure lasers with a stripe width of 1–2 μm have been fabricated by two‐step liquid phase epitaxy and preferential chemical etching. They operate in the fundamental transverse mode at wavelengths of ∼1.3 μm with threshold current as low as 22 mA. The temperature limit for cw operation is 80 °C.read more
Citations
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Journal ArticleDOI
Short-cavity InGaAsP injection lasers: Dependence of mode spectra and single-longitudinal-mode power on cavity length
TL;DR: In this article, simple expressions are given to describe the lower and upper limits of the single-mode (single-frequency) power as a function of the cavity length for InGaAsP injection lasers.
Journal ArticleDOI
InGaAsP double-channel- planar-buried-heterostructure laser diode (DC-PBH LD) with effective current confinement
Ikuo Mito,Mitsuhiro Kitamura,Kohroh Kobayashi,S. Murata,M. Seki,Y. Odagiri,H. Nishimoto,M. Yamaguchi +7 more
TL;DR: In this article, a 1.3-μm InGaAsP semiconductor laser is described, in which effective current confinement into the active region has been realized, and a p-n-p-n current blocking structure is made by liquid-phase epitaxy (LPE) on both sides of the active-stripe mesa which is defined by a pair of channels in the double-heterostructure wafer.
Journal ArticleDOI
Crystallographic etching of GaAs with bromine and chlorine plasmas
TL;DR: The etch rate of GaAs(100) is ∼20 to ∼70 μ/min in a pure Br2 discharge under these conditions, and increases by a factor of 2.0 between 0.1 and 14 MHz as mentioned in this paper.
Journal ArticleDOI
A novel technique for GaInAsP/InP buried heterostructure laser fabrication
Z. L. Liau,J. N. Walpole +1 more
TL;DR: In this paper, a simple fabrication technique for GaInAsP/InP buried heterostructure lasers has been developed based on a newly observed mass transport phenomenon on chemically etched InP mesas.
Journal ArticleDOI
Surface-emitting GaInAsP/InP laser with low threshold current and high efficiency
Z. L. Liau,J. N. Walpole +1 more
TL;DR: In this paper, a buried heterostructure laser was developed whose output was deflected to a direction perpendicular to the substrate surface by a monolithically integrated 45° (parabolic) mirror.
References
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Journal ArticleDOI
Room‐temperature cw operation of GaInAsP/InP double‐heterostructure diode lasers emitting at 1.1 μ m
TL;DR: In this article, room temperature cw operation has been achieved for stripe geometry double-heterostructure Ga0.12In0.88As0.23P0.77/InP diode lasers emitting at 1.1 μm.
Journal ArticleDOI
In 1-x Ga x As y P 1-y /InP DH lasers fabricated on InP
TL;DR: In this article, 1-x Ga x As y P 1-y /InP double heterostructure (DH) laser diodes with emission wavelengths of 1.25-1.35 µm at room temperature were fabricated on
Journal ArticleDOI
Room‐temperature cw operation of buried‐stripe double‐heterostructure GaInAsP/InP diode lasers
J. J. Hsieh,C. C. Shen +1 more
TL;DR: In this article, two types of buried-stripe double-heterostructure GaInAsP/InP diode lasers have been fabricated for room temperature cw operation for junction-defined devices emitting at 1.21 and 1.25 μm.
Journal ArticleDOI
1500‐h continuous cw operation of double‐heterostructure GaInAsP/InP lasers
TL;DR: The first double-heterostructure GaInAsP/InP diode lasers to be life tested have so far logged over 1500, 1100, and 700 h, respectively, without degradation.
1000-Hour Continuous CW Operation Of Double-Heterostructure GaInAsP/Inp Lasers
TL;DR: In this article, the authors report the results obtained to date in the first life tests of GalnAsP/InP double-heterostructure (DH) diode lasers, which emit at 1.15 μm.