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Proceedings ArticleDOI

Feedback driven temperature and supply compensated sub-0.5 V reference generator

01 Dec 2014-pp 1-6
TL;DR: In this paper, a temperature and supply compensated sub-threshold voltage reference generator with a reference voltage of 173 mV at supply voltage of 0.6 V and temperature @ 27 °C, has been designed in 45 nm CMOS technology.
Abstract: This paper presents a temperature and supply compensated sub-threshold voltage reference generator which generates a reference voltage of 173 mV at supply voltage of 0.6 V and temperature @ 27 °C, has been designed in 45 nm CMOS technology. Variation of output voltage with temperature over a range of −25 to 85 °C is 172.88 to 173.25 mV which gives temperature coefficient of 19 ppm/°C at supply voltage of 0.6 V. The variation of output voltage with supply over a range of 0.6 to 1.0 V is 173.20 to 173.85 mV which gives line sensitivity of 0.93 %/V at temperature 27 °C. The simulated PSRR value of the proposed circuit is approx −55 dB till 1 MHz.
Citations
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01 Jan 2016
TL;DR: The design of analog cmos integrated circuits is universally compatible with any devices to read and is available in the book collection an online access to it is set as public so you can download it instantly.
Abstract: Thank you very much for downloading design of analog cmos integrated circuits. Maybe you have knowledge that, people have look hundreds times for their favorite novels like this design of analog cmos integrated circuits, but end up in malicious downloads. Rather than reading a good book with a cup of coffee in the afternoon, instead they cope with some malicious virus inside their laptop. design of analog cmos integrated circuits is available in our book collection an online access to it is set as public so you can download it instantly. Our digital library saves in multiple countries, allowing you to get the most less latency time to download any of our books like this one. Merely said, the design of analog cmos integrated circuits is universally compatible with any devices to read.

912 citations

Journal ArticleDOI
TL;DR: A low complexity, sub-1V, reference voltage generator with low voltage sensitivity over PVT variation and high power supply rejection ratio (PSRR) is proposed, consisting of a traditional bandgap reference core where resistors are used for generating both the PTAT and CTAT currents, which are then added forming a temperature-independent current.

5 citations


Cites background from "Feedback driven temperature and sup..."

  • ...[15,18,26,27], low-power, subthreshold voltage references at sub-1V and 1 V supply voltages are reported....

    [...]

Proceedings Article
01 Jan 2005
TL;DR: The floating-gate analog voltage reference (FGAREF) shows a long-term drift of less than 10 ppm//spl radic/1000 h and is ideal for portable and handheld applications with a total current of only 500 nA.
Abstract: A floating gate with stored charge technique has been used to implement a precision voltage reference achieving a temperature coefficient (TC) < 1 ppm/°C in CMOS technology. A Fowler-Nordheim tunnel device used as a switch and a poly-poly capacitor form the basis in this reference. Differential dual floating gate architecture helps in achieving extremely low temperature coefficients, and improving power supply rejection. The reference is factory programmed to any value without any trim circuits to within 200 μV of its specified value. The floating-gate analog voltage reference (FGAREF) shows a long-term drift of less than 10 ppm/√1000 h. This circuit is ideal for portable and handheld applications with a total current of only 500 nA. This is done by biasing the buffer amplifier in the subthreshold region of operation. It is fabricated using a 25-V 1.5-μm E 2 PROM CMOS technology.

5 citations

References
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Book
01 Jan 1999
TL;DR: The analysis and design techniques of CMOS integrated circuits that practicing engineers need to master to succeed can be found in this article, where the authors describe the thought process behind each circuit topology, but also consider the rationale behind each modification.
Abstract: The CMOS technology area has quickly grown, calling for a new text--and here it is, covering the analysis and design of CMOS integrated circuits that practicing engineers need to master to succeed. Filled with many examples and chapter-ending problems, the book not only describes the thought process behind each circuit topology, but also considers the rationale behind each modification. The analysis and design techniques focus on CMOS circuits but also apply to other IC technologies. Table of contents 1 Introduction to Analog Design 2 Basic MOS Device Physics 3 Single-Stage Amplifiers 4 Differential Amplifiers 5 Passive and Active Current Mirrors 6 Frequency Response of Amplifiers 7 Noise 8 Feedback 9 Operational Amplifiers 10 Stability and Frequency Compensation 11 Bandgap References 12 Introduction to Switched-Capacitor Circuits 13 Nonlinearity and Mismatch 14 Oscillators 15 Phase-Locked Loops 16 Short-Channel Effects and Device Models 17 CMOS Processing Technology 18 Layout and Packaging

4,826 citations

01 Jan 2016
TL;DR: The design of analog cmos integrated circuits is universally compatible with any devices to read and is available in the book collection an online access to it is set as public so you can download it instantly.
Abstract: Thank you very much for downloading design of analog cmos integrated circuits. Maybe you have knowledge that, people have look hundreds times for their favorite novels like this design of analog cmos integrated circuits, but end up in malicious downloads. Rather than reading a good book with a cup of coffee in the afternoon, instead they cope with some malicious virus inside their laptop. design of analog cmos integrated circuits is available in our book collection an online access to it is set as public so you can download it instantly. Our digital library saves in multiple countries, allowing you to get the most less latency time to download any of our books like this one. Merely said, the design of analog cmos integrated circuits is universally compatible with any devices to read.

912 citations


"Feedback driven temperature and sup..." refers methods in this paper

  • ...Conventionally, bandgap techniques are used for the voltage reference generators with obtainable voltage level not lesser than 1.2 V [1]....

    [...]

Journal ArticleDOI
Hironori Banba1, Hitoshi Shiga1, Akira Umezawa1, T. Miyaba1, Toru Tanzawa1, S. Atsumi1, Koji Sakui1 
TL;DR: In this paper, the authors proposed a CMOS bandgap reference (BGR) circuit, which can successfully operate with sub-1-V supply, and measured V/sub ref/ is 518/spl plusmn/15 mV (3/spl sigma/) for 23 samples on the same wafer at 27-125/spl deg/C.
Abstract: This paper proposes a CMOS bandgap reference (BGR) circuit, which can successfully operate with sub-1-V supply, In the conventional BGR circuit, the output voltage V/sub ref/ is the sum of the built-in voltage of the diode V/sub f/ and the thermal voltage V/sub T/ of kT/q multiplied by a constant. Therefore, V/sub ref/ is about 1.25 V, which limits a low supply-voltage operation below 1 V. Conversely, in the proposed BGR circuit, V/sub ref/ has been converted from the sum of two currents; one is proportional to V/sub f/ and the other is proportional to V/sub T/. An experimental BGR circuit, which is simply composed of a CMOS op-amp, diodes, and resistors, has been fabricated in a conventional 0.4-/spl mu/m flash memory process. Measured V/sub ref/ is 518/spl plusmn/15 mV (3/spl sigma/) for 23 samples on the same wafer at 27-125/spl deg/C.

820 citations


"Feedback driven temperature and sup..." refers background in this paper

  • ...Several sub-band gap voltage reference circuits have already been reported in the literature that ensures sub-1 V operation [3] [5]....

    [...]

Journal ArticleDOI
TL;DR: In this paper, a sub-1V bandgap voltage reference with no low threshold voltage device is introduced, where the minimum supply voltage of the proposed voltage reference is 0.98 V at 0/spl deg/C and the maximum supply current is 18 /spl mu/A.
Abstract: A sub-1-V CMOS bandgap voltage reference requiring no low threshold voltage device is introduced in this paper. In a CMOS technology with V/sub thn/ /spl ap/ |V/sub thp/| /spl ap/ 0.9 V at 0/spl deg/C, the minimum supply voltage of the proposed voltage reference is 0.98 V, and the maximum supply current is 18 /spl mu/A. A temperature coefficient of 15 ppm//spl deg/C from 0/spl deg/C to 100/spl deg/C is recorded after trimming. The active area of the circuit is about 0.24 mm/sup 2/.

394 citations


"Feedback driven temperature and sup..." refers background in this paper

  • ...Several sub-band gap voltage reference circuits have already been reported in the literature that ensures sub-1 V operation [3] [5]....

    [...]

Journal ArticleDOI
TL;DR: A low-power CMOS voltage reference was developed using a 0.35 mum standard CMOS process technology and would be suitable for use in subthreshold-operated, power-aware LSIs.
Abstract: A low-power CMOS voltage reference was developed using a 0.35 mum standard CMOS process technology. The device consists of MOSFET circuits operated in the subthreshold region and uses no resistors. It generates two voltages having opposite temperature coefficients and adds them to produce an output voltage with a near-zero temperature coefficient. The resulting voltage is equal to the extrapolated threshold voltage of a MOSFET at absolute zero temperature, which was about 745 mV for the MOSFETs we used. The temperature coefficient of the voltage was 7 ppm/degC at best and 15 ppm/degC on average, in a range from - 20 to 80degC. The line sensitivity was 20 ppm/V in a supply voltage range of 1.4-3 V, and the power supply rejection ratio (PSRR) was -45 dB at 100 Hz. The power dissipation was 0.3 muW at 80degC. The chip area was 0.05 mm2 . Our device would be suitable for use in subthreshold-operated, power-aware LSIs.

346 citations