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Field-effect transistors based on two-dimensional materials for logic applications
Xinran Wang,Yi Shi,Rong Zhang +2 more
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TLDR
In this paper, field effect transistors for logic applications, based on two representative two-dimensional (2D) materials, graphene and MoS2, are discussed, and the future developments in 2D material transistors are discussed.Abstract:
Field-effect transistors (FETs) for logic applications, based on two representative two-dimensional (2D) materials, graphene and MoS2, are discussed. These materials have drastically different properties and require different considerations. The unique band structure of graphene necessitates engineering of the Dirac point, including the opening of the bandgap, the doping and the interface, before the graphene can be used in logic applications. On the other hand, MoS2 is a semiconductor, and its electron transport depends heavily on the surface properties, the number of layers, and the carrier density. Finally, we discuss the prospects for the future developments in 2D material transistors.read more
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Recent Development of Two-Dimensional Transition Metal Dichalcogenides and Their Applications
TL;DR: In this paper, the recent progress in 2D materials beyond graphene and includes mainly transition metal dichalcogenides (TMDs) (e.g., MoS2, WS2, MoSe2, and WSe2).
Journal ArticleDOI
New advances in nanographene chemistry
TL;DR: Recent progress in the "bottom-up" chemical syntheses of structurally well-defined nanographenes, namely graphene molecules and GNRs are described.
Journal ArticleDOI
Environmental instability of few-layer black phosphorus
TL;DR: In this article, the authors study the environmental instability of mechanically exfoliated few-layer black phosphorus (BP) flakes and find that long term exposure to ambient conditions results in a layer-by-layer etching process of BP flakes.
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Gallium nitride devices for power electronic applications
TL;DR: In this article, the authors discuss the properties of GaN that make it an attractive alternative to established silicon and emerging SiC power devices and present challenges and innovative solutions to creating enhancement-mode power switches.
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Van der Waals Heterostructures for High‐Performance Device Applications: Challenges and Opportunities
TL;DR: The current status of vertical heterostructure device applications in vertical transistors, infrared photodetectors, and spintronic memory/transistors is reviewed and the relevant challenges for achieving high-performance devices are presented.
References
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The rise of graphene
TL;DR: Owing to its unusual electronic spectrum, graphene has led to the emergence of a new paradigm of 'relativistic' condensed-matter physics, where quantum relativistic phenomena can now be mimicked and tested in table-top experiments.
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The electronic properties of graphene
TL;DR: In this paper, the basic theoretical aspects of graphene, a one-atom-thick allotrope of carbon, with unusual two-dimensional Dirac-like electronic excitations, are discussed.
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Two-dimensional gas of massless Dirac fermions in graphene
Kostya S. Novoselov,A. K. Geim,Sergey V. Morozov,Da Jiang,Mikhail I. Katsnelson,Irina V. Grigorieva,S. V. Dubonos,A. A. Firsov +7 more
TL;DR: This study reports an experimental study of a condensed-matter system (graphene, a single atomic layer of carbon) in which electron transport is essentially governed by Dirac's (relativistic) equation and reveals a variety of unusual phenomena that are characteristic of two-dimensional Dirac fermions.
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Electronics and optoelectronics of two-dimensional transition metal dichalcogenides.
TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
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Atomically thin MoS2: a new direct-gap semiconductor
TL;DR: The electronic properties of ultrathin crystals of molybdenum disulfide consisting of N=1,2,…,6 S-Mo-S monolayers have been investigated by optical spectroscopy and the effect of quantum confinement on the material's electronic structure is traced.