Flexible All-Inorganic Perovskite CsPbBr3 Nonvolatile Memory Device
07 Feb 2017-ACS Applied Materials & Interfaces (American Chemical Society)-Vol. 9, Iss: 7, pp 6171-6176
TL;DR: This study fabricated all-inorganic perovskite films as a resistive switching layer in the Al/CsPbBr3/PEDOT:PSS/ITO/PET structure for flexible nonvolatile memory application and demonstrated the as-prepared flexible resistive random access memory devices possess reproducible and reliable memory characteristics.
Abstract: All-inorganic perovskite CsPbX3 (X = Cl, Br, or I) is widely used in a variety of photoelectric devices such as solar cells, light-emitting diodes, lasers, and photodetectors. However, studies to understand the flexible CsPbX3 electrical application are relatively scarce, mainly due to the limitations of the low-temperature fabricating process. In this study, all-inorganic perovskite CsPbBr3 films were successfully fabricated at 75 °C through a two-step method. The highly crystallized films were first employed as a resistive switching layer in the Al/CsPbBr3/PEDOT:PSS/ITO/PET structure for flexible nonvolatile memory application. The resistive switching operations and endurance performance demonstrated the as-prepared flexible resistive random access memory devices possess reproducible and reliable memory characteristics. Electrical reliability and mechanical stability of the nonvolatile device were further tested by the robust current–voltage curves under different bending angles and consecutive flexing ...
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TL;DR: This silk fibroin-based hydrogel is a kind of multifunctional material towards wearable electronics with versatile applications in health and exercise monitors, soft robots and power source.
Abstract: Nowadays, great effort has been devoted to establishing wearable electronics with excellent stretchability, high sensitivity, good mechanical strength, and multifunctional characteristics. Herein, a soft conductive hydrogel is rationally designed by proportionally mixing silk fibroin, polyacrylamide, graphene oxide, and poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate). The resultant hydrogel has considerable stretchability and compressibility, which enables it to be assembled into a strain/pressure sensor with a wide sensing range (strain, 2%-600%; pressure, 0.5-119.4 kPa) and reliable stability. Then, the corresponding sensor is capable of monitoring a series of physical signals of the human body (e.g., joint movement, facial gesture, pulse, breathing, etc.). In particular, the hydrogel-based sensor is biocompatible, with no anaphylactic reaction on human skin. More interestingly, this conductive hydrogel exhibits a positive response when it works in a triboelectric nanogenerator; consequently, it lights up 20 commericial green light-emitting diodes. Thus, this silk fibroin-based hydrogel is a kind of multifunctional material toward wearable electronics with versatile applications in health and exercise monitors, soft robots, and power sources.
258 citations
TL;DR: It is shown that formation and annihilation of metal conductive filaments and Br- ion vacancy filaments driven by an external electric field and light irradiation can lead to pronounced resistive-switching effects.
Abstract: The in-depth understanding of ions' generation and movement inside all-inorganic perovskite quantum dots (CsPbBr3 QDs), which may lead to a paradigm to break through the conventional von Neumann bottleneck, is strictly limited. Here, it is shown that formation and annihilation of metal conductive filaments and Br- ion vacancy filaments driven by an external electric field and light irradiation can lead to pronounced resistive-switching effects. Verified by field-emission scanning electron microscopy as well as energy-dispersive X-ray spectroscopy analysis, the resistive switching behavior of CsPbBr3 QD-based photonic resistive random-access memory (RRAM) is initiated by the electrochemical metallization and valance change. By coupling CsPbBr3 QD-based RRAM with a p-channel transistor, the novel application of an RRAM-gate field-effect transistor presenting analogous functions of flash memory is further demonstrated. These results may accelerate the technological deployment of all-inorganic perovskite QD-based photonic resistive memory for successful logic application.
227 citations
TL;DR: HPs have enormous potential to provide a new platform for future electronic devices and explosively intensive studies will pave the way in finding new HP materials beyond conventional silicon-based semiconductors to keep up with "More-than-Moore" times.
Abstract: Fascinating characteristics of halide perovskites (HPs), which cannot be seen in conventional semiconductors and metal oxides, have boosted the application of HPs in electronic devices beyond optoelectronics such as solar cells, photodetectors, and light-emitting diodes. Here, recent advances in HP-based memory and logic devices such as resistive-switching memories (i.e., resistive random access memory (RRAM) or memristors), transistors, and artificial synapses are reviewed, focusing on inherently exotic properties of HPs: i) tunable bandgap, ii) facile majority carrier control, iii) fast ion migration, and iv) superflexibility. Various fabrication techniques of HP thin films from solution-based methods to vacuum processes are introduced. Up-to-date work in the field, emphasizing the compositional flexibility of HPs, suggest that HPs are promising candidates for next-generation electronic devices. Taking advantages of their unique electrical properties, low-cost and low-temperature synthesis, and compositional and mechanical flexibility, HPs have enormous potential to provide a new platform for future electronic devices and explosively intensive studies will pave the way in finding new HP materials beyond conventional silicon-based semiconductors to keep up with "More-than-Moore" times.
185 citations
TL;DR: This Perspective gives a condensed overview about experiments and theory on ion migration in metal halide perovskites focusing on its effects in solar cells.
Abstract: Metal halide perovskites are promising candidates for many classes of different optoelectronic devices. Apart from being a semiconductor, they additionally show ionic conductivity. It expresses itself in slow response times, reversible degradation, and hysteresis in the current–voltage characteristics of solar cells. This Perspective gives a condensed overview about experiments and theory on ion migration in metal halide perovskites focusing on its effects in solar cells. Apart from being a potential stability concern for photovoltaics, ion migration paired with the excellent optoelectronic properties of this material offers opportunities for novel devices such as optically controlled memristors and switchable diodes.
175 citations
TL;DR: A performance-enhanced OHP resistive switching device that shows an excellent performance as insulating layers in Ag/CH3NH3PbI3/Pt cells, with an endurance of over 103 cycles, a high on/off ratio of 106, and an operation speed of 640 μs and without electroforming is reported.
Abstract: It was demonstrated that organolead halide perovskites (OHPs) show a resistive switching behavior with an ultralow electric field of a few kilovolts per centimeter. However, a slow switching time and relatively short endurance remain major obstacles for the realization of the next-generation memory. Here, we report a performance-enhanced OHP resistive switching device. To fabricate topologically and electronically improved OHP thin films, we added hydroiodic acid solution (for an additive) in the precursor solution of the OHP. With drastically improved morphology such as small grain size, low peak-to-valley depth, and precise thickness, the OHP thin films showed an excellent performance as insulating layers in Ag/CH3NH3PbI3/Pt cells, with an endurance of over 103 cycles, a high on/off ratio of 106, and an operation speed of 640 μs and without electroforming. We suggest plausible resistive switching and conduction mechanisms with current–voltage characteristics measured at various temperatures and with dif...
124 citations
References
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TL;DR: Two organolead halide perovskite nanocrystals were found to efficiently sensitize TiO(2) for visible-light conversion in photoelectrochemical cells, which exhibit strong band-gap absorptions as semiconductors.
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16,634 citations
TL;DR: It is shown, using a simple analytical example, that memristance arises naturally in nanoscale systems in which solid-state electronic and ionic transport are coupled under an external bias voltage.
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8,971 citations
TL;DR: The performance requirements for computing with memristive devices are examined and how the outstanding challenges could be met are examined.
Abstract: Memristive devices are electrical resistance switches that can retain a state of internal resistance based on the history of applied voltage and current. These devices can store and process information, and offer several key performance characteristics that exceed conventional integrated circuit technology. An important class of memristive devices are two-terminal resistance switches based on ionic motion, which are built from a simple conductor/insulator/conductor thin-film stack. These devices were originally conceived in the late 1960s and recent progress has led to fast, low-energy, high-endurance devices that can be scaled down to less than 10 nm and stacked in three dimensions. However, the underlying device mechanisms remain unclear, which is a significant barrier to their widespread application. Here, we review recent progress in the development and understanding of memristive devices. We also examine the performance requirements for computing with memristive devices and detail how the outstanding challenges could be met.
3,037 citations
TL;DR: In this paper, the authors review the current status of one of the alternatives, resistance random access memory (ReRAM), which uses a resistive switching phenomenon found in transition metal oxides.
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TL;DR: The rise of metal halide perovskites as light harvesters has stunned the photovoltaic community and questions on the control of the performance of perovSKite solar cells and on its characterization are being addressed.
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1,839 citations