Floating effective back-gate effect on the small-signal output conductance of SOI MOSFETs
Citations
128 citations
81 citations
Cites background from "Floating effective back-gate effect..."
...The first transition occurs at low frequencies (1–100 Hz) and is due to the relaxation of the minority carriers in the Si substrate [17], [18]....
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...The inertia of the majority carriers in the substrate causes the output conduction variation at frequencies of a few hundred megahertz [17], [18] for a standard resistivity SOI substrate (∼20 Ω · cm)....
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42 citations
Cites background from "Floating effective back-gate effect..."
...In advanced MOSFETs, this frequency is so high that substrate and gate resistance network comes into picture [9]–[12], and gDS does not show any plateau in the frequency range of interest which makes self-heating time constant characterization difficult in most of the existing methods....
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38 citations
References
310 citations
"Floating effective back-gate effect..." refers background in this paper
...minority, and secondly, majority carriers, are no longer able to follow the ac signal [10]....
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199 citations
"Floating effective back-gate effect..." refers background in this paper
...which was extensively examined [3]–[5]....
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...Moreover, this transition does not show any dependence on the applied biases, on the contrary to what should be observed if this transition was related to the SH [3], [6]....
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148 citations
138 citations
"Floating effective back-gate effect..." refers methods in this paper
...The small-signal equivalent circuit element values were extracted directly from the measured parameters [8]....
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133 citations
"Floating effective back-gate effect..." refers background in this paper
...The first one introduces the frequency response of the minority carriers by the depletion capacitance and the resistance associated with generation-recombination processes [11], [12]...
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...The equation for is valid only in the strong inversion regime [12], while under other conditions can be neglected....
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