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Formation of a high quality two-dimensional electron gas on cleaved GaAs

Loren Pfeiffer, +6 more
- 23 Apr 1990 - 
- Vol. 56, Iss: 17, pp 1697-1699
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TLDR
In this article, a two-dimensional electron gas (2DEG) was fabricated on the cleaved (110) edge of a GaAs wafer by molecular beam epitaxy (MBE).
Abstract: 
We have succeeded in fabricating a two-dimensional electron gas (2DEG) on the cleaved (110) edge of a GaAs wafer by molecular beam epitaxy (MBE). A (100) wafer previously prepared by MBE growth is reinstalled in the MBE chamber so that an in situ cleave exposes a fresh (110) GaAs edge for further MBE overgrowth. A sequence of Si-doped AlGaAs layers completes the modulation-doped structure at the cleaved edge. Mobilities as high as 6.1×10^5 cm^2/V s are measured in the 2DEG at the cleaved interface.

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Downloaded 26 Feb 2006 to 131.215.240.9. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp
Downloaded 26 Feb 2006 to 131.215.240.9. Redistribution subject to AIP license or copyright, see http://apl.aip.org/apl/copyright.jsp
Citations
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Journal ArticleDOI

New approaches to nanofabrication: molding, printing, and other techniques.

Byron D. Gates, +5 more
- 04 Mar 2005 - 
Journal ArticleDOI

Electronic structure of quantum dots

Stephanie Reimann, +1 more
- 26 Nov 2002 - 
TL;DR: In this paper, the properties of quasi-two-dimensional semiconductor quantum dots are reviewed, and the formation of the so-called maximum-density droplet and its edge reconstruction is discussed.
Journal ArticleDOI

Spatial imaging of the spin Hall effect and current-induced polarization in two-dimensional electron gases

Vanessa Sih, +5 more
- 01 Oct 2005 - 
TL;DR: Spatial imaging of spin Hall effect and current-induced polarization in two-dimensional electron gases is described in this paper, where the spin Hall effects and current induced polarization are investigated.
Book

Doping in III-V Semiconductors

Erdmann Frederick Schubert
TL;DR: In this paper, a review of recent developments in III-V doping including the high-concentration regime for p-type dopants in InP and GaAs, sensitivity of doping incorporation on the crystal orientation, compensation mechanisms in Si-doped GaAs and carbon doping in AlxGa1-xAs is presented.

Doping in III-V Semiconductors

Erdmann Frederick Schubert
TL;DR: In this article, a review of recent developments in III-V doping including the high-concentration regime for p-type dopants in InP and GaAs, sensitivity of doping incorporation on the crystal orientation, compensation mechanisms in Si-doped GaAs and carbon doping in AlxGa1-xAs is presented.
References
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Journal ArticleDOI

Electron mobilities exceeding 107 cm2/V s in modulation‐doped GaAs

Loren Pfeiffer, +3 more
- 30 Oct 1989 - 
TL;DR: A modulation-doped Al0.35Ga0.65As/GaAs single interface structure with a 700 A undoped setback grown by solid-source molecular beam epitaxy (MBE) shows a Hall mobility of 11.7×106 cm2/V at a carrier density of 2.4×1011 electrons/cm2 measured in van der Pauw geometry after exposure to light at 0.35 K as mentioned in this paper.

Nanostructure Physics and Fabrication

A.E. Owen, +4 more
Journal ArticleDOI

Quantized magnetoresistance in two-dimensional electron systems

F. F. Fang, +1 more
- 15 May 1983 - 
TL;DR: In a quantizing magnetic field, the resistance value of a two-dimensional electron gas between any well-resolved magnetic levels in any open geometry is given by multiple fractions of $\frac{h}{{e}^{2}}$.
Journal ArticleDOI

Instabilities of (110) III–V compounds grown by molecular beam epitaxy

W. I. Wang
- 01 Jul 1983 - 
TL;DR: In this paper, the epitaxial growth of GaAs and AlGaAs on (110) oriented GaAs substrates by molecular beam epitaxy (MBE) was studied in situ by reflection high energy electron diffraction.
Journal ArticleDOI

Device quality growth and characterization of (110) GaAs grown by molecular beam epitaxy

L. T. P. Allen, +3 more
- 31 Aug 1987 - 
TL;DR: In this paper, the first (110)GaAs has been reproducibly grown by molecular beam epitaxy (MBE) for the first time by angling of the substrate to expose stable, Ga•rich ledges on the (110)-surface has been shown to be the necessary condition for twodimensional growth.
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