Free carrier absorption in Sn based Group-IV alloys
01 Dec 2012-pp 1-4
TL;DR: In this paper, the free carrier absorptions in strained Ge, relaxed GeSn and strained GeSn were estimated considering different scattering mechanisms, namely, acoustic phonon, non polar optical phonon and intervalley phonon scatterings.
Abstract: The free carrier absorptions in strained Ge, relaxed GeSn and strained GeSn are estimated considering different scattering mechanisms, namely, acoustic phonon, non polar optical phonon and intervalley phonon scatterings. The change in absorption coefficient for different Sn concentration in the alloys is also reported.
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TL;DR: In this paper, the authors predict a strain-induced Γc-Lc direct-gap crossover (λg ∼ 2.2 μm) in tensile Ge/Ge0.87Sn0.13 and compressive Ge0.98sn0.02/Ge.
153 citations
"Free carrier absorption in Sn based..." refers background in this paper
...Recently some novel ideas have been put forward [5-11] in the band structure engineering by using alloys of Si and Ge with Sn....
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TL;DR: In this paper, the direct and indirect band gaps of Si1−x−yGexSny are inferred from the calculated energy-band structure of α•Sn and from the known structures of Ge and Si.
Abstract: The direct and indirect band gaps of Si1−x−yGexSny are inferred from the calculated energy‐band structure of α‐Sn and from the known structures of Ge and Si. Our assumptions are: that the energy‐band shapes of the binaries Sn1−xGex, Ge1−ySiy and Si1−ySny change smoothly with x and y, and that the energy gap of SiGeSn can be estimated by interpolation from the gaps of SnGe, GeSi, and SiSn. The optical indices of refraction of SiGeSn are also estimated.
139 citations
"Free carrier absorption in Sn based..." refers background in this paper
...Recently some novel ideas have been put forward [5-11] in the band structure engineering by using alloys of Si and Ge with Sn....
[...]
TL;DR: The motivations for building these devices in silicon, including specific technical examples of low-loss waveguides for Raman lasers, fast silicon modulators, SiGe heterostructures for infrared photodetection, and waveguide tapers are introduced.
Abstract: This paper surveys technical challenges involved in designing and manufacturing integrated optoelectronic devices in a high-volume complementary metal-oxide-semiconductor (CMOS) microelectronic fabrication facility. The paper begins by introducing the motivations for building these devices in silicon. We discuss the advantages and challenges of both hybrid and monolithic strategies for optoelectronic integration. We then discuss the issues involved in building the devices in a standard CMOS facility, including specific technical examples. These include low-loss waveguides (WGs) for Raman lasers, fast silicon modulators, SiGe heterostructures for infrared photodetection, silicon-oxynitride (SiON) devices on silicon-on-insulator (SOI), silicon optical bench (SiOB) technology, and waveguide tapers. We conclude with a discussion and recommendations for future work in silicon photonics
135 citations
TL;DR: In this paper, single-phase Si1−x−yGexSny alloys with random diamond cubic structures are created on Si(100) via ultrahigh vacuum chemical vapor deposition reactions of SnD4 with SiH3GeH3 at 350 °C.
Abstract: Single-phase Si1−x−yGexSny alloys with random diamond cubic structures are created on Si(100) via ultrahigh vacuum chemical vapor deposition reactions of SnD4 with SiH3GeH3 at 350 °C. Commensurate heteroepitaxy is facilitated by Ge1−xSnx buffer layers, which act as templates that can conform structurally and absorb the differential strain imposed by the more rigid Si and Si–Ge–Sn materials. The crystal structure, elemental distribution and morphological properties of the Si1−x−yGexSny/Ge1−xSnx heterostructures are characterized by high-resolution electron microscopy, including electron energy loss nanospectroscopy, x-ray diffraction (rocking curves) and atomic force microscopy. These techniques demonstrate growth of perfectly epitaxial, uniform and highly aligned layers with atomically smooth surfaces and monocrystalline structures that have lattice constants close to that of Ge. Rutherford backscattering ion channeling shows that the constituent elements occupy random substitutional sites in the same ave...
111 citations
TL;DR: In this article, deuterium-stabilized Sn hydrides and ultra-high-vacuum chemical vapor deposition were used to grow Sn x Ge 1−x alloys directly on silicon.
63 citations