Full ALD Al 2 O 3 /ZrO 2 /SiO 2 /ZrO 2 /Al 2 O 3 Stacks for High-Performance MIM Capacitors
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"Full ALD Al 2 O 3 /ZrO 2 /SiO 2 /Zr..." refers methods in this paper
...tor and a resistor was used, which aimed to extract more precise capacitance from impedance especially for easy leakage dielectrics [9]....
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"Full ALD Al 2 O 3 /ZrO 2 /SiO 2 /Zr..." refers background in this paper
...H IGH-κ metal-insulator–metal (MIM) capacitors have recently been studied for radio frequency (RF) and analog/mixed-signal (AMS) integrated circuits (ICs) to meet the requirement of high capacitance density [1]–[4]....
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...SiO2/ZrO2 MIM capacitors [7], such low leakage current density and high breakdown field are due to the incorporation of amorphous Al2O3 barriers and an intermediate SiO2 layer, hence improving the interfacial quality, increasing the barrier height of TaN/insulator, and terminating the grain boundaries extending from the top to the bottom within the crystalline ZrO2 film [4]....
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...However, a high degree of voltage nonlinearity remains a major concern for practical applications while maintaining high enough capacitance density [1], [4]....
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50 citations
"Full ALD Al 2 O 3 /ZrO 2 /SiO 2 /Zr..." refers background in this paper
...On the other hand, some researchers achieved higher capacitance densities and small VCCs of MIM capacitors by introducing much higher κ materials such as TiO2 [3], SrTiO3 [13], BaZryTi1−yO3 [14], however, the leakage current and breakdown characteristics of these capacitors were quite poor....
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...achieved higher capacitance densities and small VCCs of MIM capacitors by introducing much higher κ materials such as TiO2 [3], SrTiO3 [13], BaZryTi1−yO3 [14], however, the leakage current and breakdown characteristics of these capacitors were quite poor....
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