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Journal ArticleDOI

Full ALD Al 2 O 3 /ZrO 2 /SiO 2 /ZrO 2 /Al 2 O 3 Stacks for High-Performance MIM Capacitors

07 Oct 2014-IEEE Electron Device Letters (IEEE)-Vol. 35, Iss: 11, pp 1121-1123
TL;DR: In this article, a stack with 3-nm SiO petertodd 2>>\s was explored for the first time, achieving a capacitance density of 7.40 fF/μm and high operating voltage of 6.3 V for a 10-year lifetime at RT.
Abstract: Metal-insulator-metal (MIM) capacitors with full atomic-layer-deposition Al 2 O 3 /ZrO 2 /SiO 2 /ZrO 2 /Al 2 O 3 stacks were explored for the first time. As the incorporated SiO 2 film thickness increased from 0 to 3 nm, the quadratic and linear voltage coefficients of capacitance (α and β) of the MIM capacitors reduced significantly from positive values to negative ones. For the stack with 3-nm SiO 2 film, a capacitance density of 7.40 fF/μm 2 , α of -121 ppm/V 2 , and β of -116 ppm/V were achieved, together with very low leakage current densities of 3.08 × 10 -8 A/cm 2 at 5 V at room temperature (RT) and 5.89 × 10 -8 A/cm 2 at 3.3 V at 125 °C, high breakdown field of 6.05 MV/cm, and high operating voltage of 6.3 V for a 10-year lifetime at RT. Thus, this type of stacks is a very promising candidate for next generation radio frequency and analog/mixed-signal integrated circuits.
Citations
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Journal ArticleDOI
Bao Zhu1, Xiaohan Wu1, Wen-Jun Liu1, Shi-Jin Ding1, David Wei Zhang1, Zhongyong Fan1 
TL;DR: The results show that the permittivity of ZrO2 is increased to 41.9 (~ 40% enhanced) with a microwave annealing at 1400 W for 5 min, and the conduction mechanism is confirmed as field-assisted tunneling.
Abstract: For metal-insulator-metal (MIM) capacitors applicated in the fields of RF, DRAM, and analog/mixed-signal integrated circuits, a high capacitance density is imperative with the downscaling of the device feature size. In this work, the microwave annealing technique is investigated to enhance the dielectric characteristics of Al2O3/ZrO2/Al2O3 based MIM capacitors. The results show that the permittivity of ZrO2 is increased to 41.9 (~ 40% enhanced) with a microwave annealing at 1400 W for 5 min. The substrate temperature is lower than 400 °C, which is compatible with the back end of line process. The leakage current densities are 1.23 × 10−8 and 1.36 × 10−8 A/cm2 for as-deposited sample and 1400 W sample, respectively, indicating that the leakage property is not deteriorated. The conduction mechanism is confirmed as field-assisted tunneling.

19 citations

Journal ArticleDOI
TL;DR: In this article, a plasma activation process using a gas mixture of O2/NH3/H2O for direct bonding was developed, which realized the combination of bulk aluminum oxide (Al2O3) and yttria-stabilized cubic zirconia (YSZ) without interlayers for the first time.

19 citations

Journal ArticleDOI
TL;DR: A set of 5 nanolaminates with a total thickness of about 100nm, containing several Al2O3/ZnO bilayers with thicknesses of 0.28, 0.38, 2, 10 and 20 nm, were prepared in this article.

14 citations

Journal ArticleDOI
TL;DR: In this paper, the inorganic/organic/hybrid nanolaminate distributed Bragg reflector (DBR) was used to achieve a sunlight-like WOLED.

10 citations

References
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Journal ArticleDOI
TL;DR: In this article, the voltage coefficients of capacitance (VCC) in high/spl kappa/ metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density.
Abstract: It is demonstrated that the voltage coefficients of capacitance (VCC) in high-/spl kappa/ metal-insulator-metal (MIM) capacitors can be actively engineered and voltage linearity can be significantly improved maintaining high capacitance density, by using a stacked insulator structure of high-/spl kappa/ and SiO/sub 2/ dielectrics. A MIM capacitor with capacitance density of 6 fF/spl mu/m/sup 2/ and quadratic VCC of only 14 ppm/V/sup 2/ has been demonstrated together with excellent frequency and temperature dependence (temperature coefficients of capacitance of 54 ppm /spl deg/C) as well as low leakage current of less than 10 nA/cm/sup 2/ up to 4 V at 125 /spl deg/C.

86 citations

Journal ArticleDOI
Jurriaan Schmitz1, F.N. Cubaynes1, R.J. Havens1, R. de Kort1, A.J. Scholten1, L.F. Tiemeijer1 
TL;DR: In this article, the authors present a MOS Capacitance-Voltage measurement methodology that is robust against gate leakage current densities up to 1000 A/cm/sup 2.
Abstract: We present a MOS Capacitance-Voltage measurement methodology that, contrary to present methods, is highly robust against gate leakage current densities up to 1000 A/cm/sup 2/. The methodology features specially designed RF test structures and RF measurement frequencies. It allows MOS parameter extraction in the full range of accumulation, depletion, and inversion.

69 citations


"Full ALD Al 2 O 3 /ZrO 2 /SiO 2 /Zr..." refers methods in this paper

  • ...tor and a resistor was used, which aimed to extract more precise capacitance from impedance especially for easy leakage dielectrics [9]....

    [...]

Journal ArticleDOI
TL;DR: In this paper, the capacitance density and voltage/temperature coefficients of capacitance (VCC/TCC) values decrease with increasing Al/sub 2/O/sub 3/ mole fraction.
Abstract: Metal-insulator-metal (MIM) capacitors with (HfO/sub 2/)/sub 1-x/(Al/sub 2/O/sub 3/)/sub x/ high-/spl kappa/ dielectric films were investigated for the first time. The results show that both the capacitance density and voltage/temperature coefficients of capacitance (VCC/TCC) values decrease with increasing Al/sub 2/O/sub 3/ mole fraction. It was demonstrated that the (HfO/sub 2/)/sub 1-x/(Al/sub 2/O/sub 3/)/sub x/ MIM capacitor with an Al/sub 2/O/sub 3/ mole fraction of 0.14 is optimized. It provides a high capacitance density (3.5 fF//spl mu/m/sup 2/) and low VCC values (/spl sim/140 ppm/V/sup 2/) at the same time. In addition, small frequency dependence, low loss tangent, and low leakage current are obtained. Also, no electrical degradation was observed for (HfO/sub 2/)/sub 1-x/(Al/sub 2/O/sub 3/)/sub x/ MIM capacitors after N/sub 2/ annealing at 400/spl deg/C. These results show that the (HfO/sub 2/)/sub 0.86/(Al/sub 2/O/sub 3/)/sub 0.14/ MIM capacitor is very suitable for capacitor applications within the thermal budget of the back end of line process.

69 citations

Journal ArticleDOI
TL;DR: In this article, the authors successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub sub 2/Al sub 2 O/sub 3/O sub 3/ laminate dielectric using atomic layer deposition (ALD) technique.
Abstract: For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.

59 citations


"Full ALD Al 2 O 3 /ZrO 2 /SiO 2 /Zr..." refers background in this paper

  • ...H IGH-κ metal-insulator–metal (MIM) capacitors have recently been studied for radio frequency (RF) and analog/mixed-signal (AMS) integrated circuits (ICs) to meet the requirement of high capacitance density [1]–[4]....

    [...]

  • ...SiO2/ZrO2 MIM capacitors [7], such low leakage current density and high breakdown field are due to the incorporation of amorphous Al2O3 barriers and an intermediate SiO2 layer, hence improving the interfacial quality, increasing the barrier height of TaN/insulator, and terminating the grain boundaries extending from the top to the bottom within the crystalline ZrO2 film [4]....

    [...]

  • ...However, a high degree of voltage nonlinearity remains a major concern for practical applications while maintaining high enough capacitance density [1], [4]....

    [...]

Journal ArticleDOI
TL;DR: In this article, a metal-insulator-metal capacitors with high capacitance density and low quadratic voltage coefficient of capacitance (α) were presented. But the authors pointed out that the increase in capacitance densities is usually accompanied by increased voltage nonlinearities.
Abstract: Future integration of metal-insulator-metal capacitors requires devices with high capacitance density and low quadratic voltage coefficient of capacitance (α). A major problem is that the increase in capacitance density is usually accompanied by increased voltage nonlinearities. By combining two high-k materials with opposite α, it is demonstrated that it is possible to obtain capacitors with both high capacitance density and minimal nonlinearity. A SrTiO3/ZrO2 bilayer was used to elaborate capacitors displaying a voltage coefficient of −60 ppm/V2 associated with a density of 11.5 fF/μm2. These devices constitute excellent candidates for the next generation of metal-insulator-metal capacitors.

50 citations


"Full ALD Al 2 O 3 /ZrO 2 /SiO 2 /Zr..." refers background in this paper

  • ...On the other hand, some researchers achieved higher capacitance densities and small VCCs of MIM capacitors by introducing much higher κ materials such as TiO2 [3], SrTiO3 [13], BaZryTi1−yO3 [14], however, the leakage current and breakdown characteristics of these capacitors were quite poor....

    [...]

  • ...achieved higher capacitance densities and small VCCs of MIM capacitors by introducing much higher κ materials such as TiO2 [3], SrTiO3 [13], BaZryTi1−yO3 [14], however, the leakage current and breakdown characteristics of these capacitors were quite poor....

    [...]