Full Simulation Study of UV Photodetectors Based on Pn Junctions in Silicon Carbide
TL;DR: In this paper, optical and electrical simulations of 4H-SiC UV-Photodetectors based on pn junctions are performed under the UV light, with wavelengths varying between 200 nm and 300 nm.
Abstract: This paper deals with optical and electrical simulations of 4H-SiC UV-Photodetectors based on pn junctions. The simulations are performed under the UV light, with wavelengths varying between 200 nm and 300 nm. Under reverse bias, the simulation results point out the influence of surface patterns on the current density. The studied structures of the patterns consist in a semicircle with or without a flat surface. The patterned surfaces are parametrized according to the semicircle radius R and the flat surface length L. We show that the optical absorption strongly depends on these parameters, giving a maximum value whatever the wavelength with R = 100 nm and L = 0 nm (no flat surface). However, to optimise the carrier harvest, it is important for the space charge region to be situated in a zone where the optical generation is high. This study shows that the photodetector current density increases within three orders of magnitude (from 9x10-14 A.cm-2 to 3x10-10 A.cm-2), by using the specific surface pattern given above.
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31 May 1995
TL;DR: This paper presents background history of space-grid time-domain techniques for Maxwell's equations scaling to very large problem sizes defense applications dual-use electromagnetics technology, and the proposed three-dimensional Yee algorithm for solving these equations.
Abstract: Part 1 Reinventing electromagnetics: background history of space-grid time-domain techniques for Maxwell's equations scaling to very large problem sizes defense applications dual-use electromagnetics technology. Part 2 The one-dimensional scalar wave equation: propagating wave solutions finite-difference approximation of the scalar wave equation dispersion relations for the one-dimensional wave equation numerical group velocity numerical stability. Part 3 Introduction to Maxwell's equations and the Yee algorithm: Maxwell's equations in three dimensions reduction to two dimensions equivalence to the wave equation in one dimension. Part 4 Numerical stability: TM mode time eigenvalue problem space eigenvalue problem extension to the full three-dimensional Yee algorithm. Part 5 Numerical dispersion: comparison with the ideal dispersion case reduction to the ideal dispersion case for special grid conditions dispersion-optimized basic Yee algorithm dispersion-optimized Yee algorithm with fourth-order accurate spatial differences. Part 6 Incident wave source conditions for free space and waveguides: requirements for the plane wave source condition the hard source total-field/scattered field formulation pure scattered field formulation choice of incident plane wave formulation. Part 7 Absorbing boundary conditions for free space and waveguides: Bayliss-Turkel scattered-wave annihilating operators Engquist-Majda one-way wave equations Higdon operator Liao extrapolation Mei-Fang superabsorption Berenger perfectly-matched layer (PML) absorbing boundary conditions for waveguides. Part 8 Near-to-far field transformation: obtaining phasor quantities via discrete fourier transformation surface equivalence theorem extension to three dimensions phasor domain. Part 9 Dispersive, nonlinear, and gain materials: linear isotropic case recursive convolution method linear gyrontropic case linear isotropic case auxiliary differential equation method, Lorentz gain media. Part 10 Local subcell models of the fine geometrical features: basis of contour-path FD-TD modelling the simplest contour-path subcell models the thin wire conformal modelling of curved surfaces the thin material sheet relativistic motion of PEC boundaries. Part 11 Explicit time-domain solution of Maxwell's equations using non-orthogonal and unstructured grids, Stephen Gedney and Faiza Lansing: nonuniform, orthogonal grids globally orthogonal global curvilinear co-ordinates irregular non-orthogonal unstructured grids analysis of printed circuit devices using the planar generalized Yee algorithm. Part 12 The body of revolution FD-TD algorithm, Thomas Jurgens and Gregory Saewert: field expansion difference equations for on-axis cells numerical stability PML absorbing boundary condition. Part 13 Modelling of electromagnetic fields in high-speed electronic circuits, Piket-May and Taflove. (part contents).
11,194 citations
"Full Simulation Study of UV Photode..." refers methods in this paper
...To perform the photon absorption simulations, the Maxwell’s equations are solved using the FDTD method [3]....
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TL;DR: In this article, the statistics of the recombination of holes and electrons in semiconductors were analyzed on the basis of a model in which the recombinations occurred through the mechanism of trapping.
Abstract: The statistics of the recombination of holes and electrons in semiconductors is analyzed on the basis of a model in which the recombination occurs through the mechanism of trapping. A trap is assumed to have an energy level in the energy gap so that its charge may have either of two values differing by one electronic charge. The dependence of lifetime of injected carriers upon initial conductivity and upon injected carrier density is discussed.
5,442 citations
TL;DR: In this paper, a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described and the current state of the art of different types of semiconductor UV detectors is presented.
Abstract: In this review article a comprehensive analysis of the developments in ultraviolet (UV) detector technology is described. At the beginning, the classification of UV detectors and general requirements imposed on these detectors are presented. Further considerations are restricted to modern semiconductor UV detectors, so the basic theory of photoconductive and photovoltaic detectors is presented in a uniform way convenient for various detector materials. Next, the current state of the art of different types of semiconductor UV detectors is presented. Hitherto, the semiconductor UV detectors have been mainly fabricated using Si. Industries such as the aerospace, automotive, petroleum, and others have continuously provided the impetus pushing the development of fringe technologies which are tolerant of increasingly high temperatures and hostile environments. As a result, the main efforts are currently directed to a new generation of UV detectors fabricated from wide band‐gap semiconductors the most promising ...
1,308 citations
182 citations
TL;DR: In this article, the authors report the values of the absorption coefficient of 4H, 6H and 3C SiC at room temperature, in the range 3900-2968 A.
Abstract: We report the values of the absorption coefficient of 4H, 6H and 3C SiC at room temperature, in the range 3900–2968 A. By using the known shift in the bandgap with temperature, we also present estimates of the absorption coefficient of 4H, 6H and 3C SiC at 2 K. A table is given for penetration depths at 300 and 2 K for seven common lasers used to pump SiC in this region.
124 citations