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Journal ArticleDOI

Fundamental losses in solar cells

Louise C. Hirst, +1 more
- 01 May 2011 - 
- Vol. 19, Iss: 3, pp 286-293
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TLDR
In this paper, the intrinsic loss processes that lead to fundamental limits in solar cell efficiency are quantified, accounting for all incident solar radiation, and an analytical approach is taken to highlight physical mechanisms, obscured in previous numerical studies.
Abstract
This paper considers intrinsic loss processes that lead to fundamental limits in solar cell efficiency. Five intrinsic loss processes are quantified, accounting for all incident solar radiation. An analytical approach is taken to highlight physical mechanisms, obscured in previous numerical studies. It is found that the free energy available per carrier is limited by a Carnot factor resulting from the conversion of thermal energy into entropy free work, a Boltzmann factor arising from the mismatch between absorption and emission angles and also carrier thermalisation. It is shown that in a degenerate band absorber, a free energy advantage is achieved over a discrete energy level absorber due to entropy transfer during carrier cooling. The non-absorption of photons with energy below the bandgap and photon emission from the device are shown to be current limiting processes. All losses are evaluated using the same approach providing a complete mathematical and graphical description of intrinsic mechanisms leading to limiting efficiency. Intrinsic losses in concentrator cells and spectrum splitting devices are considered and it is shown that dominant intrinsic losses are theoretically avoidable with novel device designs. Copyright © 2010 John Wiley & Sons, Ltd.

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Citations
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Photovoltaic solar cell technologies: analysing the state of the art

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Quantifying Losses in Open-Circuit Voltage in Solution-Processable Solar Cells

TL;DR: The reciprocity relation between light absorption and emission is used to explore theoretical and practical performance limits for emerging technologies based on organics and perovskites, and compare them to state-of-the-art systems based on GaAs, c-Si, and CIGS.
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Improving the light-harvesting of amorphous silicon solar cells with photochemical upconversion

TL;DR: In this article, an increase in light harvesting efficiency of a hydrogenated amorphous silicon thin-film solar cell due to a rear upconvertor based on sensitized triplet-triplet-annihilation in organic molecules was reported.
References
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Journal ArticleDOI

Detailed Balance Limit of Efficiency of p‐n Junction Solar Cells

TL;DR: In this article, an upper theoretical limit for the efficiency of p−n junction solar energy converters, called the detailed balance limit of efficiency, has been calculated for an ideal case in which the only recombination mechanism of holeelectron pairs is radiative as required by the principle of detailed balance.
Journal ArticleDOI

Limiting efficiencies of ideal single and multiple energy gap terrestrial solar cells

TL;DR: In this article, the maximum efficiency of ideal solar cells for both single and multiple energy gap cells using a standard air mass 1.5 terrestrial solar spectrum was calculated using a simple graphical method, which clearly exhibits the contributions of various intrinsic losses.
BookDOI

Third generation photovoltaics : advanced solar energy conversion

TL;DR: In this paper, the authors discuss energy, entropy, and efficiency of single junction cells, hot carrier cells, and multiple Electron-Hole Pairs per Photon per photon.
Journal ArticleDOI

Limiting efficiencies for photovoltaic energy conversion in multigap systems

TL;DR: In this article, the authors used the concepts of angle and energy restriction to emphasize that this limit is independent of the light concentration, and showed that the limiting efficiency of photovoltaic converters with a finite number of cells is higher than previously reported.
Journal ArticleDOI

Solar energy conversion with hot electrons from impact ionisation

TL;DR: In this paper, an energy distribution of electrons in the conduction band and holes in the valence band is described by a single Fermi distribution with no splitting of quasi-Fermi-energies, but with a temperature different from the lattice temperature.
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